OMNIVISION TECHNOLOGIES, INC. Patent applications |
Patent application number | Title | Published |
20160141320 | Wafer-Level Encapsulated Semiconductor Device, And Method For Fabricating Same - An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the semiconductor device. A dam supports the carrier layer above the device die, the dam being located therebetween. The semiconductor device further includes a first sealant portion for attaching the dam to the device die, and a means for attaching the dam to the carrier layer. The device die, the dam, and the carrier layer form a sealed cavity enclosing the semiconductor device. | 05-19-2016 |
20160139446 | Panel Carrier For A Liquid Crystal On Silicon Panel And Method For Electrically Interconnecting Same - A liquid-crystal-on-silicon (LCOS) panel includes a wafer having bond pads thereon, a liquid crystal layer, and a conductive layer. The panel carrier for the LCOS panel includes a conductive-layer electrode for electrically connecting the conductive layer to a printed circuit assembly (PCA), address electrodes for electrically connecting the bond pads to the PCA, and a cavity for holding the LCOS panel. The cavity includes a conductive pad for electrically connecting the conductive layer to the conductive-layer electrode, and bond-pad electrodes for electrically connecting each bond pad to a respective address electrode. A method for electrically connecting an LCOS panel to a panel carrier includes a step of electrically connecting each bond pad to a respective address electrode, and a step of electrically connecting the conductive layer to the conductive pad. | 05-19-2016 |
20160116409 | Color-Sensitive Image Sensor With Embedded Microfluidics And Associated Methods - A color-sensitive image sensor with embedded microfluidics includes a silicon substrate having (a) at least one recess partly defining at least one embedded microfluidic channel and (b) a plurality of photosensitive regions for generating position-sensitive electrical signals in response to light from the at least one recess, wherein at least two of the photosensitive regions are respectively located at at least two mutually different depth ranges, relative to the at least one recess, to provide color information. A wafer-level manufacturing method produces a plurality of such color-sensitive image sensors. A method for generating a color image of a fluidic sample includes performing imaging, onto a plurality of photosensitive regions of a silicon substrate, of a fluidic sample deposited in a microfluidic channel embedded in the silicon substrate, and generating color information based upon penetration depth of light into the silicon substrate. | 04-28-2016 |
20160111036 | POWER SAVING DISPLAY SYSTEM AND METHOD - Displays and display driving methods implement a pixel set/reset scheme. Pixel cells of an example display each include a set terminal, a reset terminal, an output terminal, and a set/reset circuit. Responsive to receiving a set signal on the set terminal, the set/reset circuit asserts a first signal on the output terminal and maintains the first signal on the output terminal until a reset signal is received on the reset terminal. Responsive to receiving a reset signal on the reset terminal, the set/reset circuit asserts a second signal on the output terminal and maintains the second signal on the output terminal until a set signal is received on the set terminal. The optical output of the pixel depends on when the first signal and the second signal are asserted on the output terminal of the set/reset circuit during a predefined modulation period. | 04-21-2016 |
20160104735 | Dual-Mode Image Sensor With A Signal-Separating Color Filter Array, And Method For Same - A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height. | 04-14-2016 |
20160103068 | HIGH-THROUGHPUT FLUORESCENCE IMAGING SYSTEM AND DEVICE WITH SAMPLE HEATING CAPABILITY, AND ASSOCIATED METHODS - A high-throughput fluorescence imaging system with sample heating capability includes an image sensor wafer with a plurality of image sensors for fluorescence imaging a plurality of samples disposed in a respective plurality of fluidic channels on the image sensor wafer. The high-throughput fluorescence imaging system further includes a heating module, thermally coupled with the image sensor wafer, for heating the samples. A method for high-throughput assay processing includes modulating temperature of a plurality of samples disposed in a respective plurality of fluidic channels on an image sensor wafer by heating the image sensor wafer, using a heating module thermally coupled with the image sensor wafer, to control reaction dynamics in the samples; and capturing a plurality of fluorescence images of the samples, using a respective plurality of image sensors of the image sensor wafer, to detect one or more components of the plurality of samples. | 04-14-2016 |
20160070089 | Wafer-Level Methods For Making Apertured Lenses And Associated Apertured Lens Systems - A wafer-level lens forming method for forming an aperture wafer wherein the aperture wafer is stacked with one or more lens wafers to form apertured lens systems. The aperture wafer is formed by lithographically depositing an opaque layer on a transparent film, which is supported by a substrate. The aperture wafer is stacked with one or more lens wafers, and appropriate spacing between the wafers is set with spacer wafers. The substrate is removed, and the lens and aperture wafers are adhered together in a stack to form an optical system. The method avoids accumulation of residual material on the lens during the opaque-layer deposition process. The resulting optical system benefits from added flexibility of the lens system design due to the ability to locate the aperture with respect to one or more lenses independently of the lens wafers. | 03-10-2016 |
20160060676 | Automated Cell Growth/Migration Detection System And Associated Methods - An automated cell growth/migration detection system includes: a container for containing a cell growth/migration matrix/medium into which deposited cells form a cell surface; an image sensor for capturing images; an actuator for incrementally varying distance between the image sensor lens and the cell surface such that the images correspond to varying imaging depths; and an image data processor for processing the images to determine cell growth/migration. An automated cell growth/migration detection method includes: capturing a first image series of a cell surface within a first imaging cycle corresponding to a sequence of imaging depths between the cell surface and an image sensor; capturing an additional image series of the cell surface within each of at least one additional imaging cycle and corresponding to the same sequence of imaging depths; processing each image series for each imaging cycle to determine a clearest-looking image; and determining cell growth/migration from the clearest-looking image. | 03-03-2016 |
20160057323 | PCB-Mountable Lens Adapter For A PCB-Mountable Camera Module - A PCB-mountable lens adapter includes an adapter lens for being a component of an imaging system that has a second field of view different from the first field of view, the imaging system comprising the adapter lens and the camera lens; and an adapter housing for holding the adapter lens and for attaching to a PCB. A method for modifying the field of view of an camera module includes attaching a PCB-mountable lens adapter to a PCB, the PCB-mountable lens adapter including an adapter lens mounted in an adapter housing, the PCB being configured for surface-mounting of the camera module thereto. | 02-25-2016 |
20160054547 | Four-Piece All-Aspheric Adapter Fisheye Lens - A four-piece all-aspheric adapter fisheye lens includes a negative meniscus lens, a biconcave lens, a positive meniscus lens, and a biconvex lens. The biconcave lens is between the negative meniscus lens and the positive meniscus lens; the positive meniscus lens is between the biconcave lens and the biconvex lens. The negative meniscus lens, the biconcave lens, the positive meniscus lens, and the biconvex lens are coaxial and arranged with an exit pupil to cooperatively generate an image with a camera lens that has greater field of view than the camera lens alone when the exit pupil is coplanar and coaxial with an entrance pupil of the camera lens. Each of the negative meniscus lens, the biconcave lens, the positive meniscus lens, and the biconvex lens has an aspheric object-side surface and an aspheric image-side surface. | 02-25-2016 |
20160027832 | Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same - An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor. | 01-28-2016 |
20160005774 | Fractal-Edge Thin Film And Method Of Manufacture - A fractal-edge thin film includes a material layer having a perimeter with a fractal dimension exceeding one, the material layer having greater peel resistance as compared to a thin-film material layer with fractal dimension equaling one. | 01-07-2016 |
20150373270 | Image Processing System And Method Using Serially Coupled Cameras For Providing Extended View - A system and method for generating an image includes a plurality of imaging units coupled together and a system controller coupled to the plurality of imaging units for providing at least one signal to each of the plurality of imaging units. Each of the imaging units comprises: an image sensing unit for generating an in-situ image, each in-situ image being a portion of the image; an input for receiving the in-situ image; a composition unit for receiving a first composite image and producing a second composite image, the second composite image being a combination of the first composite image and the in-situ image; and an output at which the second composite image is provided. | 12-24-2015 |
20150362705 | CONCAVE SPACER-WAFER APERTURES AND WAFER-LEVEL OPTICAL ELEMENTS FORMED THEREIN - Wafer-level optical elements and the concave spacer-wafer apertures in which they are formed are disclosed. The wafer-level optical elements include a spacer wafer comprising a plurality of apertures. Each aperture has a concave shape in a planar cross-section of the spacer wafer and an overflow region intersecting the planar cross-section. The wafer-level optical elements also include an array of optical elements, each optical element of the array being formed of cured flowable material within a respective one of the plurality of apertures. A portion of the cured flowable material forming each optical element extends into the overflow region of the respective aperture of the plurality of apertures. The spacer wafer includes a plurality of apertures, each of the plurality of apertures having a concave shape in a planar cross-section of the spacer wafer. Each of the plurality of apertures includes an overflow region intersecting the planar cross-section. | 12-17-2015 |
20150340391 | ENHANCED BACK SIDE ILLUMINATED NEAR INFRARED IMAGE SENSOR - An image sensor includes a photodiode disposed in semiconductor material to accumulate image charge in response to light directed through a back side of the semiconductor material. A scattering structure is disposed proximate to the front side of the semiconductor material such that the light that is directed into the semiconductor material through the back side is scattered back through the photodiode. A deep trench isolation structure is disposed in the semiconductor material that isolates the photodiode and defines an optical path such that the light that is scattered back through the photodiode in the optical path is totally internally reflected by the DTI. An antireflective coating is disposed on the back side of the semiconductor material and totally internally reflects the light scattered by the scattering structure to confine the light to remain in the optical path until it is absorbed. | 11-26-2015 |
20150334357 | WAFER LEVEL CAMERA HAVING MOVABLE COLOR FILTER GROUPING - An image capture unit includes an image sensor and a lens structure disposed proximate to the image sensor to focus an image onto the image sensor. A movable color filter grouping is disposed over the lens structure. The movable color filter grouping includes a plurality of N color filters arranged therein such that all light that is incident upon the image sensor through the lens structure is directed through only one of the plurality of N color filters of the movable color filter grouping per each exposure of the image sensor. A positioning device is attached to the movable color filter grouping to reposition the movable color filter grouping such that substantially all of the light that is incident upon the image sensor through the lens structure is directed through a different one of the plurality of N color filters for each successive exposure of the image sensor. | 11-19-2015 |
20150333099 | PHOTODIODE AND FILTER CONFIGURATION FOR HIGH DYNAMIC RANGE IMAGE SENSOR - An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The first microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode. | 11-19-2015 |
20150333094 | Suspended Lens Systems And Wafer-Level Methods For Manufacturing The Same - A suspended lens system, for imaging a scene, includes (a) a single-piece lens for receiving light from the scene, wherein the single-piece lens includes a concave surface, and (b) a substrate including a side that faces the concave surface, for holding the single-piece lens, wherein the substrate has non-zero optical transmission and contacts only portions of the single-piece lens that are away from the concave surface. A wafer-level method for manufacturing a suspended lens system includes molding a lens array, wherein each lens of the lens array includes a concave surface, and bonding the lens array to a surface of a substrate that has non-zero optical transmission, such that the concave surfaces face the substrate, to form a suspended lens wafer. | 11-19-2015 |
20150331305 | Wafer-Level Liquid-Crystal-On-Silicon Projection Assembly, Systems and Methods - A wafer-level liquid-crystal-on-silicon (LCOS) projection assembly includes a LCOS display for spatially modulating light incident on the LCOS display and a polarizing beam-separating (PBS) layer for directing light to and from the LCOS display. A method for fabricating a LCOS projection system includes disposing a PBS wafer above an active-matrix wafer. The active-matrix wafer includes a plurality of active matrices for addressing liquid crystal display pixels. The method, further includes disposing a lens wafer above the PBS wafer. The lens wafer includes a plurality of lenses. Additionally, a method for fabricating a wafer-level polarizing beam includes bonding a PBS wafer and at least one other wafer to form a stacked wafer. The PBS wafer includes a PBS layer that contains a plurality of PBS film bands. | 11-19-2015 |
20150319368 | Optical Zoom Imaging Systems And Associated Methods - An optical zoom imaging system includes (1) first and second image sensors disposed on a common substrate, and (2) first and second optical blocks in optical communication with the first and second image sensors, respectively. The first and second optical blocks have different respective magnifications. An array includes a plurality of the optical zoom imaging systems. A method for imaging a scene includes the following steps: (1) generating first image data representing the scene at a first zoom level using a first optical block in optical communication with a first image sensor, (2) generating second image data representing the scene at a second zoom level using a second optical block in optical communication with a second image sensor, the second zoom level being different from the first zoom level, and (3) selecting between the first image data and the second image data based on a desired zoom level. | 11-05-2015 |
20150318327 | BACKSIDE ILLUMINATED COLOR IMAGE SENSORS AND METHODS FOR MANUFACTURING THE SAME - A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections. | 11-05-2015 |
20150318326 | Wafer-Level Bonding Method For Camera Fabrication - A wafer-level method for fabricating a plurality of cameras includes modifying an image sensor wafer to reduce risk of the image sensor wafer warping, and bonding the image sensor wafer to a lens wafer to form a composite wafer that includes the plurality of cameras. A wafer-level method for fabricating a plurality of cameras includes bonding an image sensor wafer to a lens wafer, using a pressure sensitive adhesive, to form a composite wafer that includes the plurality of cameras. | 11-05-2015 |
20150318325 | System And Method For Black Coating Of Camera Cubes At Wafer Level - A method for black coating camera cubes at wafer level includes expanding the gap between individual diced camera cubes of the wafer by stretching tape securing the diced camera cubes. The method includes applying a black coating layer to the stretched camera cubes, laser trimming undesired portions of the black coating layer, and removing the undesired portions of the black coating layer. | 11-05-2015 |
20150312537 | IMAGE SENSOR WITH SCALED FILTER ARRAY AND IN-PIXEL BINNING - Embodiments of an apparatus including a pixel array including a plurality of individual pixels grouped into pixel kernels having two or more individual pixels, wherein each pixel kernel includes a floating diffusion electrically coupled to all individual pixels in the kernel. A color filter array (CFA) is positioned over and optically coupled to the pixel array, the CFA comprising a plurality of tiled minimal repeating units, each including a plurality of scaled filters having a photoresponse selected from among two or more different photoresponses. Individual pixels within each pixel kernel are optically coupled to a scaled filter. Circuitry and logic coupled to the pixel array cause the apparatus to operate in a first mode wherein signals from a subset of individual pixels are individually transferred to their floating diffusion and read, resulting in a high-resolution, low-sensitivity sub-image and a second mode wherein signals from individual pixels in every pixel kernel are binned into the kernel's floating diffusion and read, resulting in a low-resolution, high-sensitivity image. | 10-29-2015 |
20150312451 | Imaging Systems And Methods For Using In Spatially Constrained Locations - An imaging system for use in a spatially constrained location includes an image sensor for capturing an image, wherein the image sensor has (a) a first rectangular area containing a pixel array and connecting circuitry communicatively coupled with the pixel array and (b) a second rectangular area with only one shared side with the first rectangular area and containing support electronics for pixel array control and signal acquisition, where the support electronics is communicatively coupled with the connecting circuitry. An imaging method for use in a spatially constrained location includes (a) forming an image of a scene on a pixel array of an image sensor contained within a first rectangular area having a first side and (b) communicating electrical signals between the pixel array and support electronics located onboard the image sensor and contained within a second rectangular area sharing only one side with the first rectangular area. | 10-29-2015 |
20150310767 | Wireless Typoscope - A wireless typoscope displays an enhanced image of an object to a person with poor vision. The wireless typoscope includes an image capture unit having (a) a camera for capturing an image of the object and (b) a wireless transmission unit, and a handheld image display unit having a touch screen. The image capture unit wirelessly transmits the image to the handheld image display unit which enhances and displays the image on the touch screen. | 10-29-2015 |
20150303235 | IMAGE SENSOR PIXEL HAVING STORAGE GATE IMPLANT WITH GRADIENT PROFILE - A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate. | 10-22-2015 |
20150296150 | COMBINED VISIBLE AND NON-VISIBLE PROJECTION SYSTEM - A projection display system includes a visible light source coupled to project a visible image onto a screen. An infrared (IR) light source is coupled to project a non-visible IR image onto the screen. The non-visible IR image on the screen is independent of the visible image on the screen. The visible image and the non-visible IR image are overlapped and are displayed simultaneously on the screen. | 10-15-2015 |
20150295007 | IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE - An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device. | 10-15-2015 |
20150288908 | Floorplan-Optimized Stacked Image Sensor And Associated Methods - A floorplan-optimized stacked image sensor and a method for designing the sensor are disclosed. A sensor layer includes multiple PSAs partitioned into PSA groups. A circuit layer includes multiple analog-to-digital converters each communicatively coupled to a different PSA. Each analog-to-digital converter (ADC) is semi-aligned to the PSA group associated with the PSA to which it is communicatively coupled. The floorplan of ADCs maximizes contiguous global-based space on the circuit layer uninterrupted by an ADC. The resulting circuit layer floorplan has one or more global-based spaces interleaved with one or more local-based spaces containing ADCs. | 10-08-2015 |
20150288902 | FEED-FORWARD TECHNIQUE FOR POWER SUPPLY REJECTION RATIO IMPROVEMENT OF BIT LINE - An image sensor read out circuit includes a first current mirror circuit in which a second current conducted through a second current path is controlled in response to a first current conducted through the first current path. The second current is conducted through an amplifier transistor of a pixel circuit. A first current source coupled to the first current path to provide a substantially constant current component of the first current. A second current source coupled to a power supply rail of the pixel circuit and coupled to the first current path to provide a ripple current component of the first current. The ripple current component provided by the second current source is responsive to a ripple in the power supply rail. The first current is responsive to a sum of the currents from the first and second current sources. | 10-08-2015 |
20150286064 | REDUCING SPECKLE IN PROJECTED IMAGES - A despeckle optical system for an image projector includes a diffuser, an in-plane vibrator, a microlens array, and a vibrator driver. The in-plane vibrator is coupled to vibrate the diffuser along a vibration plane. The vibrator driver is coupled to drive the in-plane vibrator and configured to drive the in-plane vibrator at different vibration amplitudes for averaging the intensity of speckle in display light that propagates through the diffuser via the microlens array. | 10-08-2015 |
20150271411 | IMAGE SENSOR CROPPING IMAGES IN RESPONSE TO CROPPING COORDINATE FEEDBACK - Reducing consumption of image sensor processor bandwidth includes capturing an image containing subject matter with an image sensor and cropping the image to generate a cropped image. Cropping the image is performed by the image sensor in response to coordinates received from an image sensor processor. The cropped image is sent from the image sensor to the image sensor processor and new coordinates based on a position of the subject matter in the cropped image are determined with the image sensor processor. The new coordinates are then sent to the image sensor. | 09-24-2015 |
20150271377 | COLOR IMAGE SENSOR WITH METAL MESH TO DETECT INFRARED LIGHT - An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels. | 09-24-2015 |
20150270302 | IMAGE SENSOR HAVING A GAPLESS MICROLENSES - An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses. | 09-24-2015 |
20150264247 | System And Method For Continuous Auto Focus Within Camera Module - A continuous autofocus system includes an image generation portion including a lens, an autofocus voice coil motor for translating the lens with respect to an image sensor capable of generating image data. The autofocus system further includes a driver IC for controlling the autofocus voice coil motor based on the image data, wherein the image data is directly transmitted to the driver IC thereby continuously maintaining a focused image generated by the image generation portion. | 09-17-2015 |
20150256723 | SYSTEMS AND METHODS FOR OBTAINING ELECTRONIC IMAGES FROM WITHIN A STRONG MAGNETIC FIELD - A system for obtaining an electronic image from within a strong magnetic field includes (a) a camera having an electronic image sensor for generating a first electrical image signal representative of the electronic image, and an electrical-to-optical converter for converting the first electrical image signal to an optical signal, (b) an optical-to-electrical converter for converting the optical signal to a second electrical image signal representative of the electronic image, and (c) an optical fiber for communicating the optical signal from the camera to the optical-to-electrical converter. | 09-10-2015 |
20150254818 | Image Transformation And Multi-View Output Systems And Methods - An image transformation and multi-view output system and associated method generates output view data from raw image data using a coordinate mapping that reverse maps pixels of the output view data onto the raw image data. The coordinate mapping is stored in a lookup table and incorporates perspective correction and/or distortion correction for a wide angle lens used to capture the raw image data. The use of the lookup table with reverse mapping improves performance of the image transformation and multi-view output system to allow multi-view video streaming of images corrected for one or both of perspective and distortion. | 09-10-2015 |
20150228680 | Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same - An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor. | 08-13-2015 |
20150228650 | STANDARD CELL GLOBAL ROUTING CHANNELS OVER ACTIVE REGIONS - An integrated circuit chip includes CMOS integrated circuit cells arranged in a semiconductor layer, each including first and second active regions, having first and second polarities, respectively. A first power rail is routed along boundaries of the CMOS integrated circuit cells proximate to the first active regions. A second power rail is routed over second active regions. Global routing channels are routed over the second active regions such that the second power rail is disposed between the global routing channels and the first power rail. The global routing channels are coupled between the CMOS integrated circuit cells to couple the CMOS integrated circuit cells together globally in the integrated circuit chip. | 08-13-2015 |
20150212151 | System And Method For Scan-Testing Of Idle Functional Units In Operating Systems - A system has in an integrated circuit a seed memory coupled to seed a vector generator that provides a vector to at least one scan chain of a first functional unit. A signature generator is configured to generate a signature from scan chain data, the signature is compared to an expected signature in a signature memory. A state memorizer is provided for saving a state of the functional unit and to restore the state of the functional unit as testing is completed. The system also has apparatus configured to determine an idle condition of the functional unit despite a non-idle state of the system; and a control unit configured to operate a test sequence when the functional unit is idle, the test sequence saving a state of the unit, generating vectors and signatures and verifying the signatures, and restoring the state of the unit. | 07-30-2015 |
20150200314 | BACK SIDE ILLUMINATED SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR WITH HIGH SHORT WAVELENGTH DETECTION EFFICIENCY - A single photon avalanche diode (SPAD) includes an n doped epitaxial layer disposed in a first semiconductor layer. A p doped epitaxial layer is above the n doped epitaxial layer on a back side of the first semiconductor layer. A multiplication junction is defined at an interface between the n doped epitaxial layer and the p doped epitaxial layer. A multiplication junction is reversed biased above a breakdown voltage such that a photon received through the back side of the first semiconductor layer triggers an avalanche multiplication process in the multiplication junction. A p− doped guard ring region is implanted in the n doped epitaxial layer surrounding the multiplication junction. | 07-16-2015 |
20150200222 | SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR STACKED CHIP APPLICATIONS - An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels. | 07-16-2015 |
20150195433 | Image Device Having Efficient Heat Transfer, And Associated Systems - An imaging device provides efficient heat transfer by orienting components of the imaging device such that heat is transferred out of the imaging device instead of within the imaging device assembly. Heat is transferred out of the imaging device assembly through a printed circuit board to which the assembly housing is mounted thereon and/or through the housing itself. | 07-09-2015 |
20150192949 | Digital Calibration-Based Skew Cancellation for Long-Reach MIPI D-PHY Serial Links - A Mobile Industry Processor Interface (MIPI) physical layer (D-PHY) serial communication link and a method of reducing clock-data skew in a MIPI D-PHY serial communication link include apparatus including a clock transmitting circuit for transmitting a clock signal on a first lane of the MIPI D-PHY serial link, a data transmitting circuit for transmitting a data signal on a second lane of the MIPI D-PHY serial link, a clock receiving circuit for receiving the clock signal on the first lane of the MIPI D-PHY serial link, and a data receiving circuit for receiving the data signal on the second lane of the MIPI D-PHY serial link. The clock transmitting circuit and the data transmitting circuit transmit the clock signal and the data signal in phase during a calibration mode and out of phase during a normal operation mode. | 07-09-2015 |
20150179695 | IMAGE SENSOR PIXEL FOR HIGH DYNAMIC RANGE IMAGE SENSOR - An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light. | 06-25-2015 |
20150179034 | Capsule Camera With Onboard Data Storage And Method For Same - A capsule camera with onboard data storage includes a camera capable of capturing images including an initial image frame and a next image frame. The onboard data storage is capable of storing image data associated with the images. The capsule camera also includes a volatile memory unit capable of temporarily storing the image frames, a control subsystem capable of comparing the image frames, and transmitting the next image frame to the onboard data storage if the next image frame differs from the initial image frame. A method for recording video with a capsule camera includes capturing an initial image frame using a camera, capturing a next image frame at an initial duration after capturing the initial image frame, and comparing the initial image frame and the next image frame, and optionally transmitting the next image frame to the onboard data storage. | 06-25-2015 |
20150163429 | LOW POWER IMAGING SYSTEM WITH SINGLE PHOTON AVALANCHE DIODE PHOTON COUNTERS AND GHOST IMAGE REDUCTION - An imaging system includes a pixel array including a plurality of pixels. Each one of the pixels includes a single photon avalanche diode (SPAD) coupled to detect photons in response to incident light. A photon counter included in readout circuitry coupled to each pixel to count a number of photons detected by each pixel. The photon counter is coupled to stop counting photons in each pixel when a threshold photon count is reached for each pixel. Control circuitry is coupled to the pixel array to control operation of the pixel array. The control circuitry includes an exposure time counter coupled to count a number of exposure times elapsed before each pixel detects the threshold photon count. Respective exposure time counts and photon counts are combined for each pixel of the pixel array. | 06-11-2015 |
20150163418 | Image Sensors For Capturing Both Visible Light Images And Infrared Light Images, And Associated Systems And Methods - An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors. | 06-11-2015 |
20150156412 | Image Data Aggregating High Dynamic Range Imaging Systems And Associated Methods - An image data aggregating high dynamic range imaging system includes an image sensor for generating N image data sets from an array of photodiodes, where N is an integer greater than one. The image sensor is adapted to generate each of the N image data sets with a different respective exposure time duration of the array of photodiodes. The system further includes an image data aggregating module for aggregating the N image data sets to obtain a virtual long exposure image data set. | 06-04-2015 |
20150138483 | Thermal Carrier For An LCOS Display Panel And Associated Methods - A thermal carrier and method control a temperature of an LCOS display panel. The temperature of the LCOS display panel is determined Electrical power to a heating element within a thermal carrier carrying the LCOS display panel is increased when the temperature of the LCOS display panel is below a first temperature threshold and electrical power to the heating element is decreased when the temperature of the LCOS display panel is above a second temperature threshold. | 05-21-2015 |
20150138410 | HIGH DYNAMIC RANGE IMAGE SENSOR READ OUT ARCHITECTURE - A method of controlling a pixel array includes reading out image data from pixel cells of a row i of the of the pixel array with second transfer control signals that are coupled to be received by transfer transistors included in the pixels cells of the row of the of the pixel array that is being read out. Exposure times for pixel cells are independently controlled in other rows of the pixel array that are not being read out with first transfer control signals coupled to be received by transfer transistors included in the pixel cells in the other rows of the of the pixel array that are not being read out while the image data is read out from the pixel cells of row i of the pixel array. | 05-21-2015 |
20150130972 | Self-Adaptive Lens Shading Calibration and Correction - A CMOS imaging system is capable of self-calibrating to correct for lens shading by use of images captured in the normal environment of use, apart from a production calibration facility. | 05-14-2015 |
20150123172 | BIG-SMALL PIXEL SCHEME FOR IMAGE SENSORS - An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region. | 05-07-2015 |
20150116562 | COMPACT SPACER IN MULTI-LENS ARRAY MODULE - An apparatus includes an image sensor partitioned into N image sensor regions. The image sensor is attached to a circuit board. A lens array having including N lenses is disposed proximate to the image sensor. Each one of the N lenses is arranged to focus a single image onto a respective one of the N image sensor regions. A spacer structure is stacked between to the lens array and the circuit board to separate the lens array from the image sensor, wherein the spacer structure surrounds a perimeter around all of the N image sensor regions and N lenses such that none of the spacer structure is disposed between any of the N lenses and N image sensor regions of the image sensor. | 04-30-2015 |
20150115131 | STACKED CHIP SPAD IMAGE SENSOR - An example imaging sensor system includes a Single-Photon Avalanche Diode (SPAD) imaging array formed in a first semiconductor layer of a first wafer. The SPAD imaging array includes an N number of pixels, each including a SPAD region formed in a front side of the first semiconductor layer. The first wafer is bonded to a second wafer at a bonding interface between a first interconnect layer of the first wafer and the second interconnect layer of the second wafer. An N number of digital counters are formed in a second semiconductor layer of the second wafer. Each of the digital counters are configured to count output pulses generated by a respective SPAD region. | 04-30-2015 |
20150109500 | IMAGE SENSOR INCLUDING SPREAD SPECTRUM CHARGE PUMP - A method of reducing harmonic tones of noise in an image sensor includes generating a system clock and generating a random clock in response to the system clock. A charge pump is clocked with the random clock to generate a boosted voltage. The boosted voltage is provided to a pixel array of the image sensor. Image charge is readout from pixel cells of the pixel array using the boosted voltage from the charge pump. | 04-23-2015 |
20150108507 | IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE - A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons. | 04-23-2015 |
20150102993 | PROJECTOR-CAMERA SYSTEM WITH AN INTERACTIVE SCREEN - A projector-camera system includes a projector coupled to back project a first image on a translucent diffusing screen. A camera is coupled to capture a second image from a back side of the translucent diffusing screen. The second image includes the first image back projected on the translucent diffusing screen and a shadow of a pointing device cast on a front side of the translucent diffusing screen. The pointing device is on the front side of the translucent diffusing screen and is in close proximity to the translucent diffusing screen. A processing block is coupled to the projector and the camera to generate a third image including the shadow of the pointing device. The processing block is further coupled to activate a command in a main computer coupled to the processing block in response to a relative position of the shadow of the pointing device in the third image. | 04-16-2015 |
20150097213 | IMAGE SENSOR AND PIXELS INCLUDING VERTICAL OVERFLOW DRAIN - Embodiments of an apparatus comprising a pixel array including a plurality of pixels formed in a substrate having a front surface and a back surface, each pixel including a photosensitive region formed at or near the front surface and extending into the substrate a selected depth from the front surface. A filter array is coupled to the pixel array, the filter array including a plurality of individual filters each optically coupled to a corresponding photosensitive region, and a vertical overflow drain (VOD) is positioned in the substrate between the back surface and the photosensitive region of at least one pixel in the array. | 04-09-2015 |
20150085978 | X-RAY AND OPTICAL IMAGE SENSOR - An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data. | 03-26-2015 |
20150077856 | Apparatus And Method For Molding Optical Lense During A Puddle Dispensing Process - An optical mold including a spacer cavity portion, a lens cavity portion and a flow stop control portion for allowing optical lens material to flow between the spacer cavity portion and the lens cavity portion and an optical lens array formed therefrom. The optical mold may further include a pedestal located within the spacer cavity portion for supporting the mold during a puddle dispensing process. A method for using the optical mold including the spacer cavity portion, the lens cavity portion, and the flow cavity portion, and optionally the pedestal. | 03-19-2015 |
20150076639 | OPTICAL SHIELD IN A PIXEL CELL PLANARIZATION LAYER FOR BLACK LEVEL CORRECTION - A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light. | 03-19-2015 |
20150076330 | Dual VPIN HDR Image Sensor Pexel - A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals. | 03-19-2015 |
20150076322 | Sensor And Method For Color Photosensor Array With Shielded, Deep-Penetration, Photodiodes For Color Detection - A photosensor has a masking layer having an opening over a central photodiode and a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the central photodiode that at least some light admitted through the opening over the central photodiode reaches the first adjacent photodiode through the central photodiode. The photosensor also has a second adjacent photodiode; the second adjacent photodiode covered by the masking layer and located sufficiently near the first adjacent photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching the second adjacent photodiode through the first adjacent photodiode. Circuitry is provided for reading the photodiodes and generating a blue, a green, and a red channel signal by processing signals read from the photodiodes. | 03-19-2015 |
20150070596 | EYEWEAR DISPLAY SYSTEM PROVIDING VISION ENHANCEMENT - An eyewear display system includes a camera coupled to capture an image of an object in a surrounding environment. A projector is coupled to receive the captured image to output a projected image. A polarizing beam splitter optically coupled to receive the projected image and an actual view of the surrounding environment. The polarizing beam splitter is optically coupled to output a combined view of the projected image combined with the actual view of the surrounding environment. The combined image is to be directed to an eye of a user. An intensity controller is optically coupled between the surrounding environment and the polarizing beam splitter to controlling an intensity of the actual view of the surrounding environment received by the polarizing beam splitter. | 03-12-2015 |
20150070547 | METHOD AND APPARATUS FOR READING IMAGE DATA FROM AN IMAGE SENSOR - A method of reading image data from an image sensor includes accumulating image charges in photosensitive elements of an array of pixel cells. The accumulated image charges are transferred to corresponding transistors in multi-phase transfer channels that are coupled to corresponding columns of the pixel array. Multi-phase transfer signals are generated. Each set of the multi-phase transfer signals includes a plurality of control signals that are out-of-phase with one another and are coupled to control respective transistors in the multi-phase transfer channels. The accumulated image charges from a first variable number of pixel cells of a selected column are output in response to the multi-phase transfer signals. The accumulated image charges from a second variable number of pixel cells of another selected column are output in response to the multi-phase transfer signals. | 03-12-2015 |
20150070466 | Camera Devices And Systems Based On A Single Image Sensor And Methods For Manufacturing The Same - A camera device includes a single imaging sensor, a plurality of imaging objectives associated with the single imaging sensor, and a plurality of dedicated image areas within the single imaging sensor, each of the plurality of dedicated image areas corresponding to a respective one of the plurality of imaging objectives, such that images formed by each of the plurality of imaging objectives may be recorded by the single imaging sensor. | 03-12-2015 |
20150049215 | Systems And Methods For Generating High Dynamic Range Images - A method determines a pixel value in a high dynamic range image from two images of different brightness by obtaining corresponding input pixel intensities from the two images, determining combination weights, and calculating the pixel value in the high dynamic range image as a weighted average of the input pixel intensities. Another method determines a pixel value in a high dynamic range image from more than two images by forming pairs of corresponding input pixel intensities, determining relative combination weights for the input pixels intensities for each pair, applying a normalization condition to determine absolute combination weights, and calculating the pixel value in the high dynamic range image as a weighted average of the input pixel intensities. Systems for generating high dynamic range image generation from two or more input images include a processor, a memory, a combination weight module, and a pixel value calculation module. | 02-19-2015 |
20150049023 | Keyboard Camera Device - A keyboard camera device has a key array forming a keyboard and at least one camera configured with the keyboard and positioned with a field of view to view a user of the keyboard. An interface unit includes a keyboard controller for interfacing with an array of keys of the keyboard to detect key operations, a camera controller for controlling the at least one camera to capture images, and a host interface for receiving indication of the key operations and the images and for communicating the key operation indications and the images to one communication port of a computer. | 02-19-2015 |
20150048427 | IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE - A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion. | 02-19-2015 |
20150041627 | PARTITIONED SILICON PHOTOMULTIPLIER WITH DELAY EQUALIZATION - A photon detection device includes a first wafer having an array of photon detection cells partitioned into a plurality of photon detection blocks arranged in the first wafer. A second wafer having a plurality of block readout circuits arranged thereon is also included. An interconnect wafer is disposed between the first wafer and the second wafer. The interconnect wafer includes a plurality of conductors having substantially equal lengths. Each one of the plurality of conductors is coupled between a corresponding one of the plurality of photon detection blocks in the first wafer and a corresponding one of the plurality of block readout circuits such that signal propagation delays between each one of the plurality of photon detection blocks and each one of the plurality of block readout circuits are substantially equal. | 02-12-2015 |
20150036058 | APPLICATION SPECIFIC, DUAL MODE PROJECTION SYSTEM AND METHOD - A projector panel includes pixel display, a display controller, and a pattern generator. The pattern generator is operative to output pixel data indicative of at least one application specific predetermined pattern. In a particular embodiment, the projector panel is a liquid-crystal-on-silicon panel. In another particular embodiment, the projector panel is adapted for selective use in either structured light projection systems or conventional video projection systems. | 02-05-2015 |
20150018611 | Self-Illuminating CMOS Imaging Package - A microelectronics chip contains an integrated CMOS imaging sensor integrated with a LED die. Circuitry is established on the chip for a shared power arrangement. | 01-15-2015 |
20140375784 | Image Sensor With Integrated Orientation Indicator - An image sensor system for a medical procedure system includes a sensor array for generating image data for a scene and an orientation sensor directly mechanically connected to the image sensor. The orientation sensor generates an electrical signal indicative of orientation of the sensor array. A processor receives the image data and the electrical signal and generates an image of the scene, the image of the scene being altered to compensate for orientation of the sensor array. | 12-25-2014 |
20140375759 | Method And Apparatus For Distributed Image Processing In Cameras For Minimizing Artifacts In Stitched Images - A method for coordinated adjustment of a first image captured by a first camera and a second image captured by a second camera includes determining a first set of image processing parameters from the first image and a second set of image processing parameters from the second image, transmitting the first set of image processing parameters to a master, the master not being the first camera; combining at least the first and second sets of processing parameters into a combined or composite set of parameters; transmitting the composite parameters from the master to the first camera; and using a processor of the first camera to apply the composite parameters to the first image, and a processor of the second camera to apply composite parameters to the second image. An apparatus has at least two cameras configured to implement the method. | 12-25-2014 |
20140374862 | CMOS Image Sensor With Integrated Silicon Color Filters - A color photosensor array has photosensors of a first type having a thick overlying silicon layer, photosensors of a second type having a thin overlying silicon layer, and photosensors of a third type having no overlying silicon layer; the photosensors of the first type having peak sensitivity in the red, the photosensors of the second type having peak sensitivity in the green. In particular embodiments, color correction circuitry is provided to enhance color saturation. | 12-25-2014 |
20140354861 | CORRECTION OF IMAGE SENSOR FIXED-PATTERN NOISE (FPN) DUE TO COLOR FILTER PATTERN - Embodiments of an apparatus including a pixel array and a color filter array optically coupled to the pixel array, the color filter array including a plurality of tiled minimal repeating units. Processing circuitry is coupled to the pixel array to correct fixed pattern noise (FPN) in an image captured by the pixel array. The processing circuitry corrects the values of pixels that are part of a correction group, and wherein the corrections comprise a combination of a color ratio correction that is based on the ratios of selected colors within the minimal repeating unit, and one or more crosstalk corrections that are based on a chief ray angle (CRA) correction and the color ratio correction. | 12-04-2014 |
20140347736 | Systems And Methods For Aligning A Near-Eye Display Device - A near-eye display system includes (a) a near-eye display device, having a display and capable of providing, to a pupil of a user, an image from the display superimposed on an ambient scene, and (b) a fixture for coupling the near-eye display device to a holder mounted to the user, wherein the fixture has a plurality of degrees of freedom for alignment of the display device with respect to the pupil. | 11-27-2014 |
20140347572 | Near-Eye Display Systems, Devices And Methods - A near-eye display device includes (a) a display unit having a liquid-crystal-on-silicon (LCOS) display and a first polarizing beam splitter interface for (i) reflecting illumination light from an illumination module towards the liquid-crystal-on-silicon display and (ii) transmitting display light from the LCOS display based on the illumination light, and (b) a viewing unit having an imaging objective that forms an image of the LCOS display for the pupil based on the display light, and a second polarizing beam splitter interface for (i) reflecting reflected display light from the imaging objective towards the pupil and (ii) transmitting ambient light from an ambient scene towards a pupil, the second polarizing beam splitter interface and the first polarizing beam splitter interface being orthogonal to a common plane. | 11-27-2014 |
20140345090 | Mounting System For Glasses Frames - A system for attaching a device to a glasses frame includes a spring clip that applies pressure to two sides of the glasses frame, and a magnet for attaching the device thereto. The device may attach directly to the magnet, or via a slide-on attachment piece. The spring clip may include a spring arm having distal ends that assist the spring clip in applying pressure to the glasses frames. | 11-27-2014 |
20140340553 | HIGH DYNAMIC RANGE IMAGE SENSOR WITH FULL RESOLUTION RECOVERY - A method of reading pixel data from a pixel array includes exposing each one of a plurality of regions of pixels a respective exposure time. Pixel data is read from the plurality of regions of pixels. The pixel data is interpolated from a first one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the first one of the plurality of regions of pixels to generate a first image having the first exposure time. The pixel data is interpolated from the second one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the second one of the plurality of regions to generate a second image having the second exposure time. The images are combined to produce a high dynamic range image. | 11-20-2014 |
20140340549 | IMAGE SENSOR WITH FAST INTRA-FRAME FOCUS - A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data. | 11-20-2014 |
20140337669 | On-Line Memory Testing Systems And Methods - A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory has a fault. | 11-13-2014 |
20140334016 | FIVE-ASPHERIC-SURFACE WAFER-LEVEL LENS SYSTEMS HAVING WIDE VIEWING ANGLE - A wafer-level lens system includes a first substrate, a first lens having a planar surface in contact with the first substrate and a concave aspheric surface, a second substrate, a second lens having a convex aspheric surface facing the first lens and a planar surface in contact with the second substrate, a third lens having a planar surface in contact with the second substrate and a concave aspheric surface, a third substrate, a fourth lens having a convex aspheric surface facing the third lens and a planar surface in contact with the third substrate, and a fifth lens having a planar surface in contact with the third substrate and a concave aspheric surface. | 11-13-2014 |
20140326856 | INTEGRATED CIRCUIT STACK WITH LOW PROFILE CONTACTS - An integrated circuit system includes first and second device wafers, each having lateral sides along which a plurality of T-contacts are disposed. The first and second device wafers are stacked together and the lateral sides of the first and second device wafers are aligned such that each one of the plurality of T-contacts of the first device wafer is coupled to a corresponding one of the plurality of T-contacts of the second device wafer. A plurality of solder balls are attached to the lateral sides and are coupled to the plurality of T-contacts. A circuit board includes a recess with a plurality of contacts disposed along lateral sides within the recess. The first and second device wafers are attached to the circuit board such that each one of the plurality of solder balls provide a lateral coupling between the first and second device wafers and the circuit board. | 11-06-2014 |
20140320715 | Imaging Systems And Methods Using Square Image Sensor For Flexible Image Orientation - An imaging system for generating flexibly oriented electronic images includes an image sensor having a square pixel array, imaging optics for forming an optical image on at least a portion of the square pixel array, wherein the portion is within an image circle of the imaging optics and includes at least two rectangular sub-portions differing from each other in aspect ratio and/or orientation, and a processing module capable of generating an electronic image from each of the at least two rectangular sub-portions. An imaging method for generating electronic images of flexible orientation, using a square image sensor pixel array, includes forming an optical image on at least a portion of the square image sensor pixel array, selecting, according to a desired orientation, a rectangular sub-portion of the at least a portion of the square image sensor pixel array, and generating a final electronic image from the sub-portion. | 10-30-2014 |
20140312918 | APPARATUS, METHOD AND SYSTEM FOR RANDOM NUMBER GENERATION - Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events. | 10-23-2014 |
20140306360 | METHOD OF FORMING DUAL SIZE MICROLENSES FOR IMAGE SENSORS - A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens. | 10-16-2014 |
20140306308 | Wafer-Level Array Cameras And Methods For Fabricating The Same - A wafer-level array camera includes (i) an image sensor wafer including an image sensor array, (ii) a spacer disposed on the image sensor wafer, and (iii) a lens wafer disposed on the spacer, wherein the lens wafer includes a lens array. A method for fabricating a plurality of wafer-level array cameras includes (i) disposing a lens wafer, including a plurality of lens arrays, on an image sensor wafer, including a plurality of image sensor arrays, to form a composite wafer and (ii) dicing the composite wafer to form the plurality of wafer-level array cameras, wherein each of the plurality of wafer-level array cameras includes a respective one of the plurality of lens arrays and a respective one of the plurality of image sensor arrays. | 10-16-2014 |
20140300754 | SYSTEMS AND METHODS FOR CALIBRATION OF A 360 DEGREE CAMERA SYSTEM - Systems and methods for calibrating a 360 degree camera system include imaging reference strips, analyzing the imaged data to correct for pitch, roll, and yaw of cameras of the 360 degree camera system, and analyzing the image data to correct for zoom and shifting of the cameras. Each of the reference strips may include a bullseye component and a dots component to aid in the analyzing and correcting. | 10-09-2014 |
20140299957 | IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION - An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes. | 10-09-2014 |
20140299956 | LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS - An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer. | 10-09-2014 |
20140299925 | CMOS IMAGE SENSOR WITH RESET SHIELD LINE - Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node. | 10-09-2014 |
20140291481 | ENHANCED PHOTON DETECTION DEVICE WITH BIASED DEEP TRENCH ISOLATION - A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material. | 10-02-2014 |
20140267860 | IMAGE SENSOR WITH SUBSTRATE NOISE ISOLATION - A process including forming an a backside-illuminated (BSI) image sensor in a substrate, the image sensor including a pixel array formed in or near a front surface of the substrate and one or more circuit blocks formed in the substrate near the pixel array, each circuit block including at least one support circuit. An interconnect layer is formed on the front surface of the substrate that includes a dielectric within which are embedded traces and vias, wherein the traces and vias electrically couple the pixel array to at least one of the one or more support circuits. An isolation trench is formed surrounding at least one of the one or more circuit blocks to isolate the pixel array and other circuit blocks from noise generated by the at least one support circuit within the circuit block surrounded by the isolation trench. Other embodiments are disclosed and claimed. | 09-18-2014 |
20140267848 | IMAGE SENSOR WITH PIXELS HAVING INCREASED OPTICAL CROSSTALK - An image sensor includes a first pixel and a second pixel. The first pixel includes a first light sensitive element, a first light filter, and a first microlens. The second pixel is disposed adjacent to the first pixel and includes a second light sensitive element, a second light filter, and a second microlens. The first pixel is configured to direct at least some of the light received at the first microlens to the second light sensitive element of the second pixel to increase optical crosstalk so as to reduce color aliasing. | 09-18-2014 |
20140267782 | Apparatus And Method For Automated Self-Training Of White Balance By Electronic Cameras - A method for calibrating auto white balancing in an electronic camera includes (a) obtaining a plurality of color values from a respective plurality of images of real-life scenes captured by the electronic camera under a first illuminant, (b) invoking an assumption about a true color value of at least portions of the real-life scenes, and (c) determining, based upon the difference between the true color value and the average of the color values, a plurality of final auto white balance parameters for a respective plurality of illuminants including the first illuminant. An electronic camera device includes an image sensor for capturing real-life images of real-life scenes, instructions including a partly calibrated auto white balance parameter set and auto white balance self-training instructions, and a processor for processing the real-life images according to the self-training instructions to produce a fully calibrated auto white balance parameter set specific to the electronic camera. | 09-18-2014 |
20140267033 | Information Technology Device Input Systems And Associated Methods - A method for generating a control signal to control an information technology device includes the following steps: (1) capturing, using an image sensor, a current control image of a light source of a remote controller positioned within a field of view of the image sensor; (2) identifying, within the current control image, a current location of light emitted from the light source; (3) determining movement between (a) the current location of the light emitted from the light source and (b) a previous location of the light emitted from the light source determined from a previously captured image; (4) generating a movement control signal based upon the movement; and (5) sending the movement control signal to the information technology device. The method is executed, for example, by a movement control module of an information technology device input system. | 09-18-2014 |
20140246561 | HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF PHOTODIODES WITH A SINGLE IMPLANT - A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode includes at least one implanted portion having the first doping concentration from the first doping implantation. The light exposure area of the long integration photodiode further includes at least one non-implanted portion photomasked from the first doping implantation such that a combined doping concentration of the implanted and non-implanted portions of the light exposure area of the long integration photodiode is less than the first doping concentration of the light exposure area of the short integration photodiode. | 09-04-2014 |
20140244763 | Apparatus And Method For Level-Based Self-Adjusting Peer-to-Peer Media Streaming - An apparatus and method for media streaming in a peer-to-peer (P2P) network having a plurality of peer modules connected on the network include a source peer module connected on the network, the source peer module being associated with a highest logical level of the network. A plurality of viewer peer modules is also connected on the network, each viewer peer module being associated with a logical network level. The logical network level associated with each viewer peer module is a quantity of logical network levels that the viewer peer module is logically below the source peer module. The P2P network is configured such that each viewer peer module can be connected to no more than one up-peer module logically above the viewer peer module, and each viewer peer module can be connected to any integer number of down-peer modules logically below the viewer peer module. | 08-28-2014 |
20140239351 | PROCESS TO ELIMINATE LAG IN PIXELS HAVING A PLASMA-DOPED PINNING LAYER - Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed. | 08-28-2014 |
20140239154 | HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF AMPLIFIER TRANSISTORS - A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell. | 08-28-2014 |
20140239152 | IMAGE SENSOR WITH PIXEL UNITS HAVING MIRRORED TRANSISTOR LAYOUT - An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor region is a minor image of a transistor layout of the first pixel transistor region. | 08-28-2014 |
20140231621 | IMAGE SENSOR AND COLOR FILTER ARRAY INCLUDING MULTIPLE SELECTABLE MESHED FILTER SETS - An apparatus including a pixel array including a plurality of pixels and a filter array positioned over the pixel array, the color filter array comprising a plurality of tiled minimal repeating units, each minimal repeating unit including a plurality of enmeshed filter sets, each filter set including a different set of colors than any other filter set in the filter array. Other embodiments are disclosed and claimed. | 08-21-2014 |
20140220725 | Integrated Die-Level Cameras And Methods Of Manufacturing The Same - An integrated die-level camera system and method of making the camera system include a first die-level camera formed at least partially in a die. A second die level camera is also formed at least partially in the die. Baffling is formed to block stray light between the first and second die-level cameras. | 08-07-2014 |
20140220713 | ARRAYED IMAGING SYSTEMS HAVING IMPROVED ALIGNMENT AND ASSOCIATED METHODS - Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors. | 08-07-2014 |
20140210028 | COLOR FILTER INCLUDING CLEAR PIXEL AND HARD MASK - Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed. | 07-31-2014 |
20140209815 | FLUORESCENCE IMAGING MODULE - A fluorescence imaging module includes an image sensor and a lens disposed between a fluorescence sample and the image sensor to focus a fluorescence image of the fluorescence sample onto the image sensor. The fluorescence sample is to be positioned an object distance away from the lens. The lens is positioned an image distance away from the image sensor. The image distance is greater than the object distance. An illuminating device is disposed between the fluorescence sample and the lens. The illuminating device includes a light source and an optical element. The light source is adapted to emit light in a first direction towards the optical element. The optical element is optically coupled to receive the light and redirect the light in a second direction towards the fluorescence sample to illuminate the fluorescence sample. | 07-31-2014 |
20140192199 | MOBILE COMPUTING DEVICE HAVING VIDEO-IN-VIDEO REAL-TIME BROADCASTING CAPABILITY - A mobile computing device includes a first video camera on a first side of the mobile computing device producing a first camera video stream. A second video camera is on a second side of the mobile computing device producing a second camera video stream. A video processor is coupled to the first video camera and the second video camera to receive the first camera video stream and the second camera video stream, respectively. The video processor is coupled to merge the first camera video stream and the second camera video stream to generate a merged video stream. The video processor includes a network interface coupled to upload the merged video stream to a server in real-time using an Internet wireless network. The server broadcasts the merged video stream to a plurality of receivers in real-time. | 07-10-2014 |
20140192198 | VIDEO-IN-VIDEO VIDEO STREAM HAVING A THREE LAYER VIDEO SCENE - A mobile computing device includes first, second and third cameras coupled to produce first, second and third camera video streams, respectively. The first camera is on a first side of the mobile computing device, and the second and third cameras are included in a stereo camera on a second side of the mobile computing device. A video processor is coupled to generate an output video stream including a first video layer generated from the first camera video stream. The video processor is further coupled to generate the output video stream to include second and third video layers from the second camera video stream in response to the second and the third camera video streams. The video processor is further coupled to overlay the first video layer between the second video layer and the third video layer in the output video stream. | 07-10-2014 |
20140183333 | CONVERSION CIRCUITRY FOR REDUCING PIXEL ARRAY READOUT TIME - An image sensor includes a pixel array having pixels arranged in rows and columns, a first successive-approximation-register (“SAR”) analog-to-digital-converter (“ADC”), a second SAR ADC, and first and second control circuitry. The first SAR ADC includes a first capacitor array (“FCA”) that shares a first common terminal coupled to a first comparator and coupled to receive first analog pixel signals. The second SAR ADC includes a second capacitor array (“SCA”) that shares a second common terminal selectably coupled to a second comparator and coupled to receive second analog pixel signals. The first and second control modules are coupled to selectably switch bottom plates of the FCA from a low reference voltage to the high reference voltage at a same time as selectably switching bottom plates of the SCA from a high reference voltage to the low reference voltage. | 07-03-2014 |
20140146872 | System And Method For Randomly Accessing Compressed Data From Memory - A method facilitating random access to segments of compressed data stored in memory includes the steps of receiving a series of data segments, encoding the series of data segments into a series of compressed data segments of variable segment sizes, storing the series of compressed data segments in a memory, and generating a locator for each of the compressed data segments. Each locator is indicative of the location of an associated compressed data segment in the memory. A method for randomly accessing a segment of compressed data includes receiving a request for a compressed data segment, retrieving a locator associated with the requested segment, using the retrieved locator to locate the requested segment in the memory, and retrieving the requested segment from the memory. Thus, compressed data segments can be decoded in a different order than the order they were encoded in. Systems for implementing the methods are also disclosed. | 05-29-2014 |
20140146505 | BALL GRID ARRAY AND LAND GRID ARRAY HAVING MODIFIED FOOTPRINT - An apparatus includes a substrate having a surface and a plurality of solder balls arranged on the surface to form a ball grid array. A portion of the plurality of solder balls is arranged to have a pitch between adjacent solder balls. The adjacent solder balls having the pitch have a shape of a truncated sphere. At least one solder ball of the plurality of solder balls is included in a solder island on the surface having a shape that is different than the shape of the truncated sphere. | 05-29-2014 |
20140146192 | ACOUSTIC CONFIGURATION OF A WIRELESS CAMERA - An example wireless camera system includes a camera, a wireless network adapter, an acoustic receiver, and a processor. The camera is configured to acquire image data and the wireless network adapter wirelessly communicates the image data over a wireless network. The acoustic receiver is configured to receive an acoustic signal containing configuration data and the processor configures the network adapter to communicate over the wireless network using the received configuration data of the acoustic signal. | 05-29-2014 |
20140139934 | Two-Stage Optical Object Molding Using Pre-Final Form - A lens, such as a lens for use in a wafer-level camera, is made by forming a polymeric material with at least one master to form a pre-final lens. The pre-final lens forms a majority of a final volume of the lens. The pre-final lens is allowed to harden, during which it may sag or shrink. An aliquot of polymeric material is added to the lens and formed with the same master with a spacer, or with a second master, to form a first surface layer that provides correction between the pre-final lens shape and a final desired lens shape. In an embodiment, the surface layer has similar or identical index of refraction to the pre-final lens. In an embodiment the lens is formed on a substrate. In an embodiment, a send master, or master pair, are used to form a lens having upper and lower curvature, with a second aliquot of polymeric material forming a second surface layer on a surface of the lens opposite to the first surface layer. | 05-22-2014 |
20140139642 | Camera Array Systems Including At Least One Bayer Type Camera And Associated Methods - A method for processing a plurality of images of a scene recorded from different vantage points, where the plurality of images includes a color reference image captured by a Bayer type camera and at least one additional image, the method including (a) registering at least a portion of the plurality of images, and (b) generating a unitary color image from the plurality of images, wherein color information of the unitary color image is determined exclusively from the color reference image. | 05-22-2014 |
20140132731 | Apparatus And Method For Three-Dimensional Image Capture With Extended Depth Of Field - An optical system for capturing three-dimensional images of a three-dimensional object is provided. The optical system includes a projector for structured illumination of the object. The projector includes a light source, a grid mask positioned between the light source and the object for structured illumination of the object, and a first Wavefront Coding (WFC) element having a phase modulating mask positioned between the grid mask and the object to receive patterned light from the light source through the grid mask. The first WFC element is constructed and arranged such that a point spread function of the projector is substantially invariant over a wider range of depth of field of the grid mask than a point spread function of the projector without the first WFC element. | 05-15-2014 |
20140132592 | METHOD, APPARATUS AND SYSTEM FOR PROVIDING PRE-EMPHASIS IN A SIGNAL - A transmitter for generating a differential signal pair including a pre-emphasis component. In an embodiment, the transmitter comprises pre-driver circuitry including an input to receive a single-ended data signal. The differential transmitter further comprises a load circuit coupled between the input and a node coupled to an output of the pre-driver circuitry which corresponds to a constituent signal of the differential signal pair. In another embodiment, the load circuit is configurable to provide a signal path between the input and the node. A configuration of the load circuit allows for a type of pre-emphasis to be included in the constituent signal. | 05-15-2014 |
20140128673 | Large-Field-Of-View Lens System For Capsule Endoscope And Capsule Endoscope Having Large-Field-Of-View Lens System - A lens system and a for a capsule endoscope includes a first lens having a concave aspheric surface having a radius R2 and a second lens having a convex aspheric surface having a radius R3 facing the first lens. A third lens has a convex aspheric surface having radius R6. The lens system satisfies the following conditions: (1) R2/Gap>1 and ABS(R3/R2)>1.28; (2) 105-08-2014 | |
20140125370 | Image Sensor Testing Probe Card - A probe card for use in testing a wafer and a method of making the probe card include a printed circuit board (PCB) formed with a conductor pattern and a probe head in proximity to the PCB, the probe head defining at least one hole through the probe head, and the probe head being made of an electrically insulating material. At least one conductive pogo pin is disposed respectively in the at least one hole, the pogo pin having a first end electrically connected to the conductor pattern on the PCB. At least one conductive probe pin includes a cantilever portion and a tip portion. The cantilever portion is in contact with and electrically connected to a second end of the pogo pin, and the tip portion is electrically connectable to the wafer to electrically connect the wafer to the conductor pattern on the PCB. The cantilever portion of the probe pin is fixedly attached to the probe head. | 05-08-2014 |
20140125368 | Apparatus And Method For Obtaining Uniform Light Source - An apparatus and method for increasing uniformity in light from a light source at a plurality of targets of the light include a plurality of movable aperture elements, locatable between the light source and the targets, each aperture element defining an aperture through which the light passes from the light source to an associated one of the plurality of targets associated with the aperture element along a longitudinal axis of the aperture element. A holder movably holds the plurality of aperture elements, each of the plurality of aperture elements being movable within the holder along the longitudinal axis of the aperture element to change a feature of light incident on the target associated with the aperture element. | 05-08-2014 |
20140124889 | DIE SEAL RING FOR INTEGRATED CIRCUIT SYSTEM WITH STACKED DEVICE WAFERS - An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer. | 05-08-2014 |
20140118572 | Alternative Color Image Array And Associated Methods - An image sensor includes an array of light sensitive elements and a filter array. Each filter element is in optical communication with a respective light sensitive element. The image sensor receives filtered light having a repeating pattern. Light sensitive elements in at least two successive rows alternately receive light having a first color and a second color, and light sensitive elements in common columns of the successive rows alternately receive light having the first color and the second color. Light sensitive elements in at least two additional successive rows alternately receive light having a third and a fourth color, and light sensitive elements in common columns of the additional successive rows alternately receive light having the third color and the fourth color. Output values of pairs of sampled light sensitive elements receiving light of a common color and from successive rows are combined to generate a down-sampled image. | 05-01-2014 |
20140117485 | NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT - An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer. | 05-01-2014 |
20140117203 | Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same - An image sensor includes a photo sensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photo sensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor. | 05-01-2014 |
20140111666 | IMAGE SENSOR APPARATUS AND METHOD FOR SCENE ILLUMINANT ESTIMATION - An image sensor apparatus is disclosed. The image sensor apparatus includes an image sensor for generating pixel data corresponding to a scene under a scene illuminant and a processor. The processor includes an illuminant estimation module for receiving a subset of the pixel data associated with a subset of a color space and finding a chromaticity trend in the pixel data subset to estimate the scene illuminant. A white balance and color correction module in the processor applies white balance and color correction coefficients to the pixel data according to the estimated scene illuminant. | 04-24-2014 |
20140103411 | STACKED CHIP IMAGE SENSOR WITH LIGHT-SENSITIVE CIRCUIT ELEMENTS ON THE BOTTOM CHIP - An example imaging sensor system includes a backside-illuminated CMOS imaging array formed in a first semiconductor layer of a first wafer. The CMOS imaging array includes an N number of pixels, where each pixel includes a photodiode region. The first wafer is bonded to a second wafer at a bonding interface between a first metal stack of the first wafer and a second metal stack of the second wafer. A storage device is disposed in a second semiconductor layer of the second wafer. The storage device includes at least N number of storage cells, where each of the N number of storage cells are configured to store a signal representative of image charge accumulated by a respective photodiode region. Each storage cell includes a circuit element that is sensitive to light-induced leakage. | 04-17-2014 |
20140103410 | PARTIAL BURIED CHANNEL TRANSFER DEVICE IN IMAGE SENSORS - An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate. | 04-17-2014 |
20140103189 | Compact In-Pixel High Dynamic Range Imaging - Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element to a readout node. Embodiments of the invention further describe control node to have to a plurality of different capacitance regions to selectively increase the overall capacitance of the floating diffusion node. This variable capacitance of the floating diffusion node increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system, as well as increasing the signal-to-noise ratio (SNR) of the imaging system. | 04-17-2014 |
20140091201 | RANDOM ESTIMATION ANALOG-TO-DIGITAL CONVERTER - A random estimation analog-to-digital converter for converting a first analog signal into a digital signal includes a random bit generator, a digital-to-analog converter, a summer, an M-bit analog-to-digital converter, and a digital combiner. The random bit generator generates random least significant bits (LSBs) and the digital-to-analog converter then converts the random LSBs into a second analog signal. The summer subtracts the second analog signal from the first analog signal in the analog domain. The M-bit analog-to-digital converter then converts the modified first analog signal into the most significant bits (MSBs) of the digital image signal. The digital combiner combines the random LSBs with the MSBs in the digital domain to generate the digital signal. In one example, the random LSBs are extra bits that are beyond the maximum resolution of the M-bit analog-to-digital converter. | 04-03-2014 |
20140085497 | Systems And Methods For Sychronizing Multiple Video Sensors - A system and method for producing an image include a plurality of sensors detecting light from a subject being imaged, each sensor generating an associated video signal indicative of its detected light, each video signal comprising a predefined time interval. A decoder receives the video signals from their associated sensors, detects the predefined time intervals of the received video signals, generates a synchronization signal, and transmits the synchronization signal to each sensor during the predefined time interval of its associated video signal. | 03-27-2014 |
20140084135 | Backside-Illuminated Photosensor Array With White, Yellow ad Red-Sensitive Elements - A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal. | 03-27-2014 |
20140078314 | IMAGE BASED SYSTEMS FOR DETECTING INFORMATION ON MOVING OBJECTS - Systems and methods for generating images of an object having a known object velocity include imaging electromagnetic radiation from the object onto a sensor array of an imaging system, adjusting at least one of a shutter rate and a shutter direction of the imaging system in accordance with an image velocity of the image across the sensor array, and sampling output of the sensor array in accordance with the shutter rate and the shutter direction to generate the images. Systems and methods for generating images of an object moving through a scene include a first imaging system generating image data samples of the scene, a post processing system that analyzes the samples to determine when the object is present in the scene, and one or more second imaging systems triggered by the post processing system to generate one or more second image data samples of the object. | 03-20-2014 |
20140078278 | Systems and Methods for Controlling Lighting Strength of a Camera System by Time-Matched Intermittent Illumination - A camera system with lighting strength control includes: an image sensor for capturing images of a scene; a light source for illumination of the scene; and a signal generator, in communication with the image sensor and the light source, for generation of (a) a first signal for controlling image capture by the image sensor and (b) a second signal for controlling a duty cycle of the light source. A method for controlling the lighting strength of a camera system, which includes an image sensor, an associated light source, and an associated signal generator, includes: (a) generating, using the signal generator, a first signal that controls image capture by the image sensor, and (b) generating, using the signal generator, a second signal that controls a duty cycle of the light source. | 03-20-2014 |
20140078277 | ACQUIRING GLOBAL SHUTTER-TYPE VIDEO IMAGES WITH CMOS PIXEL ARRAY BY STROBING LIGHT DURING VERTICAL BLANKING PERIOD IN OTHERWISE DARK ENVIRONMENT - Introduce CMOS pixel array into dark environment and acquiring video image frames. During a first frame, reset each row of pixels sequentially, and one row at a time, and then read each row of pixels sequentially, and one row at a time. During a second frame, reset each row of pixels sequentially, and one row at a time, and then read each row of pixels sequentially, and one row at a time. Control a light source to illuminate the dark environment during at least a portion of a vertical blanking period between the reading of the last row during the first frame and the reading of the first row during the second frame. Control the light source to not illuminate the dark environment: (a) between the reading the first and last rows during the first frame; and (b) between the reading the first and last rows during the second frame. | 03-20-2014 |
20140071404 | LOW Z-HEIGHT PROJECTION SYSTEM FOR PROJECTING STRUCTURED LIGHT FOR 3D IMAGING - A low Z-height projection system includes a display panel for displaying a grating pattern that has gratings extended in a first direction. A projection lens system is also included and projects the grating pattern displayed on the display panel onto a surface. The projection lens system is a truncated circular lens system that has a first lens width in the first direction and a second lens width in a second direction. The first lens width is less than the second lens width. The first and second directions are orthogonal. | 03-13-2014 |
20140063565 | Systems And Methods For Resuming Capture Of A Base Image Of An Object By A Mobile Scanner - Systems and methods resume capture of a base image from an object by a mobile scanner operated by a user. An indication of an overlap area on a base image displayed within a computer display is received. A scan image is received from the mobile scanner positioned on the object at a location corresponding to the overlap area. A match between a segment of the scan image and a corresponding segment of the base image is determined, where the match defines a location and orientation of the mobile scanner relative to the base image. An indication that the scan has resumed is made to the user when the match is found, and images that are subsequently received from the mobile scanner are stitched to the base image based upon the determined location and orientation. The partially formed base image and the scanner image are concurrently displayed to the user. | 03-06-2014 |
20140063304 | IMAGE SENSOR WITH FIXED POTENTIAL OUTPUT TRANSISTOR - An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region. | 03-06-2014 |
20140063301 | METHOD AND APPARATUS FOR REDUCING NOISE IN ANALOG IMAGE DATA OF A CMOS IMAGE SENSOR - A method for preprocessing analog image data to reduce noise in the analog image data that is readout from a pixel array of an image sensor during a sampling time is disclosed. The method includes generating multiple samples of the analog image data during the sampling time and then limiting values of the multiple samples to an upper and lower threshold. The method also includes pre-conditioning the multiple samples by applying a weighting factor to each of the multiple samples in response to when a respective sample was generated during the sampling time. A median value of the multiple samples is then determined and outputted. | 03-06-2014 |
20140062599 | SELECTIVE GAIN CONTROL CIRCUIT - A circuit for providing signal amplification with reduced fixed pattern noise. In an embodiment, the circuit includes an amplifier and a plurality of legs coupled in parallel with one another between a first node for an input of the amplifier and a second node for an output of the amplifier. Control logic selects a first combination of the plurality of legs for a first configuration of the circuit to provide a first loop gain with the amplifier. In another embodiment, the control logic further selects a second combination of the plurality of legs for a second configuration of the circuit to provide a second loop gain with the amplifier, wherein the first loop gain is substantially equal to the second loop gain. | 03-06-2014 |
20140061433 | COMPARATOR CIRCUIT FOR REDUCED OUTPUT VARIATION - A comparator circuit for generating a signal representing a comparison of an input signal and a reference signal. In an embodiment, the comparator circuit includes a first stage and a second stage to provide respective signal amplification, where switch circuitry of the second stage switchedly couples respective elements of the first and second stages. The comparator circuit further includes a third stage to generate an output signal based on an intermediate signal of the second stage. In another embodiment, feedback circuitry of the comparator circuit is to selectively control a voltage of the output stage based on the output signal. | 03-06-2014 |
20140055755 | DEVICE AND METHOD FOR REDUCING SPECKLE IN PROJECTED IMAGES - An image projector includes a light source for displaying light and a diffusing screen coupled to an in-plane vibrator. The diffusing screen is positioned to receive the display light from the light source and generate phase-modulated display light. The image projector also includes a collimating element positioned to receive the phase-modulated display light. The image projector further includes a display panel positioned to receive the phase-modulated display light after being collimated by the collimating element. The display panel is configured to generate a projectable image using the phase-modulated display light. | 02-27-2014 |
20140054807 | Methods For Forming A Lens Plate For An Integrated Camera Using UV-Transparent Molds And Methods For Forming UV-Transparent Molds - Suspended lenses in a spacer wafer and lens-in-a-pocket structures are replicated from UV-transparent molds. The fabrication of UV-transparent molds can include providing a substrate with pedestals, fabricating a lens on each pedestal using a step-and-repeat process, replicating an intermediate mold from the substrate with pedestals having lenses on the pedestals, and replicating a UV-transparent mold from the intermediate mold. The fabrication of UV-transparent molds can also include providing a substrate with holes, fabricating a lens in each hole and replicating a UV-transparent mold from the substrate with the holes having the lenses. | 02-27-2014 |
20140048897 | PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER - Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer. | 02-20-2014 |
20140048686 | CAPACITANCE SELECTABLE CHARGE PUMP - A step-up converter includes an input coupled to receive a first voltage potential and an output coupled to output a second voltage potential higher than the first voltage potential. The step-up converter also includes an array of capacitance charge pumps. Each of the capacitance charge pumps in the array includes switches to be modulated to individually run each of the capacitance charge pumps by selectively connecting each of the capacitance charge pumps to the input and the output. The step-up converter further includes a control module coupled to the switches of each of the capacitance charge pumps and configured to modulate the switches at a substantially fixed frequency. The control module modulates the switches of selected capacitance charge pumps in the array in response to a current draw on the output. The step-up converter may be included in an image sensor. | 02-20-2014 |
20140048685 | NOISE-MATCHING DYNAMIC BIAS FOR COLUMN RAMP COMPARATORS IN A CMOS IMAGE SENSOR - Embodiments of an image sensor including a pixel array with a plurality of pixels arranged into rows and columns. Control circuitry coupled to the pixels in each row, and an analog-to-digital converter is coupled to the pixels in each column of the pixel array. Each analog-to-digital converter includes a ramp comparator, and a variable current source coupled to the ramp comparator to provide a variable bias current to the ramp comparator. The bias current can adjusted during reading of a row of pixels according to a dynamic bias current profile that maintains at least a specified margin between the random noise of the pixels and an acceptable noise level. Other embodiments are disclosed and claimed. | 02-20-2014 |
20140043507 | LENS ARRAY FOR PARTITIONED IMAGE SENSOR HAVING COLOR FILTERS - An apparatus includes an image sensor including N image sensor regions arranged thereon. N lens structures are included in a lens array disposed proximate to the image sensor. Each one of the N lens structures is arranged to focus a single image onto a respective one of the N image sensor regions. The N lens structures include a first lens structure having a red color filter, a second lens structure having a green color filter, and a third lens structure having a blue color filter. Each one of the N lens structures includes a glass wafer and a lens formed on the glass wafer. Each one of the red color filter, the green color filter, and the blue color filter is one of coated on the glass wafer underneath the lens and coated over the lens on the glass wafer. | 02-13-2014 |
20140035089 | PAD DESIGN FOR CIRCUIT UNDER PAD IN SEMICONDUCTOR DEVICES - Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via. | 02-06-2014 |
20140034808 | CMOS IMAGE SENSOR SWITCH CIRCUIT FOR REDUCED CHARGE INJECTION - A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage. | 02-06-2014 |
20140028913 | Apparatus And Method For Generating Picture-In-Picture (PIP) Image - According to a picture-in-picture (PIP) system and method, a first image sensor device detects light from a first subject and generates a first signal indicative of image data for the first subject. A second image sensor device detects light from a second subject and generates a second signal indicative of image data for the second subject. Overlay logic combines the first and second signals to generate a picture-in-picture signal indicative of a combination of an image of the first subject and an image of the second subject, wherein the overlay logic is located within the first image sensor device. The first image sensor device generates a synchronization signal which is received by the second image sensor device and triggers the second image sensor device to generate the second signal indicative of image data for the second subject. | 01-30-2014 |
20140028851 | Image Processing System And Method Using Multiple Imagers For Providing Extended View - A system and method for generating an image includes a plurality of imaging units coupled together and a system controller coupled to the plurality of imaging units for providing at least one signal to each of the plurality of imaging units. Each of the imaging units comprises: an image sensing unit for generating an in-situ image, each in-situ image being a portion of the image; an input for receiving the in-situ image; a composition unit for receiving a first composite image and producing a second composite image, the second composite image being a combination of the first composite image and the in-situ image; and an output at which the second composite image is provided. | 01-30-2014 |
20140027827 | GROUND CONTACT STRUCTURE FOR A LOW DARK CURRENT CMOS PIXEL CELL - Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion. | 01-30-2014 |
20140014813 | INTEGRATED CIRCUIT STACK WITH INTEGRATED ELECTROMAGNETIC INTERFERENCE SHIELDING - An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface. | 01-16-2014 |
20140008515 | HYBRID ANALOG-TO-DIGITAL CONVERTER HAVING MULTIPLE ADC MODES - A hybrid ADC having a successive approximation register (SAR) ADC mode for generating a bit of a digital signal and a ramp ADC mode for generating an additional bit of the digital signal is disclosed. When in the SAR ADC mode, a control circuit is configured to disable a ramp signal generator; disable a counter; and enable a register to control an offset stage to set the magnitude of an offset voltage that is provided to an input of a comparator of the ADC. When in the ramp ADC mode, the control circuit is configured to enable the ramp signal generator to provide a ramp signal to the input of the comparator; enable the counter to begin providing the digital count in response to the output of the comparator; and disable the register so that the offset stage is not providing the offset voltage. | 01-09-2014 |
20130329074 | SHUTTER RELEASE USING SECONDARY CAMERA - A method of capturing an image includes activating a first image sensor and capturing a sequence of images with a second image sensor. A determination is made as to whether the sequence of images captured by the second image sensor includes a shutter gesture. If a shutter gesture is included in the sequence of images captured by the second image sensor, the first image sensor captures a target image in response. | 12-12-2013 |
20130321605 | ENCAPSULATED IMAGE ACQUISITION DEVICES HAVING ON-BOARD DATA STORAGE, AND SYSTEMS, KITS, AND METHODS THEREFOR - A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed. | 12-05-2013 |
20130321604 | ENCAPSULATED IMAGE ACQUISITION DEVICES HAVING ON-BOARD DATA STORAGE, AND SYSTEMS, KITS, AND METHODS THEREFOR - A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed. | 12-05-2013 |
20130321603 | ENCAPSULATED IMAGE ACQUISITION DEVICES HAVING ON-BOARD DATA STORAGE, AND SYSTEMS, KITS, AND METHODS THEREFOR - A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed. | 12-05-2013 |
20130320195 | LENS ARRAY FOR PARTITIONED IMAGE SENSOR - An apparatus includes an image sensor having N image sensor regions arranged thereon. A lens array having a including N lens structures is disposed proximate to the image sensor. Each one of the N lens structures is arranged to focus a single image onto a respective one of the N image sensor regions. The N lens structures include a first lens structure having a first focal length and positioned the first focal length away from the respective one of the N image sensor regions. A second lens structure having a second focal length is positioned the second focal length away from the respective one of the N image sensor regions. A third lens structure having a third focal length is positioned the third focal length away from the respective one of the N image sensor regions. The first, second and third focal lengths are different. | 12-05-2013 |
20130308870 | Apparatus And Method For Correction Of Distortion In Digital Image Data - An apparatus and method for correcting for distortion in distorted digital data for a distorted image to produce corrected digital data for a corrected image partitions the distorted digital data into a plurality of distorted data blocks. Each distorted data block is separately encoded into an encoded distorted data block. A plurality of corrected regions of the corrected image is defined, each corrected region being associated with a respective corrected data block. For each corrected data block, a plurality of associated encoded distorted data blocks is identified, the plurality of associated encoded distorted data blocks is decoded into a respective plurality of associated decoded distorted data blocks, and corrected image data for the corrected data block are generated using the associated decoded distorted data blocks. | 11-21-2013 |
20130308057 | METHOD, APPARATUS AND SYSTEM TO PROVIDE VIDEO DATA FOR BUFFERING - Techniques and mechanisms for circuitry to provide video data for loading to a buffer. In an embodiment, a loader circuit receives video data and determines MX data for a video frame and NZ data for the video frame, wherein M and N are different respective dimensions of a color space, and wherein X is a first encoding type and Z is a second encoding type. The first MX data includes data representing a first portion of a color component value, and the first NZ data includes data representing a second portion of that color component value. In another embodiment, the loader circuit sends the MX data via a first channel while sending the NZ data via a second channel to a random access buffer. | 11-21-2013 |
20130307093 | BACKSIDE STIMULATED SENSOR WITH BACKGROUND CURRENT MANIPULATION - A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current. | 11-21-2013 |
20130292751 | IMAGE SENSOR WITH SEGMENTED ETCH STOP LAYER - An apparatus includes a semiconductor layer having an array of pixels arranged therein. A passivation layer is disposed proximate to the semiconductor layer over the array of pixels. A segmented etch stop layer including a plurality of etch stop layer segments is disposed proximate to the passivation layer over the array of pixels. Boundaries between each one of the plurality of etch stop layer segments are aligned with boundaries between pixels in the array of pixels. | 11-07-2013 |
20130286285 | METHOD, APPARATUS AND SYSTEM FOR EXCHANGING VIDEO DATA IN PARALLEL - Techniques and mechanisms for exchanging sets of video data each via multiple channels. In an embodiment, a first data set is distributed across the multiple channels according to a first mapping of the multiple channels each to a different respective one of multiple data types, where each of the multiple data types corresponds to a different respective dimension of a color space. In another embodiment, a second data set is distributed across the multiple channels according to a second mapping of the multiple channels each to a different respective one of the multiple data types, where the second mapping is different from the first mapping. | 10-31-2013 |
20130271826 | Lens Plate For Wafer-Level Camera And Method Of Manufacturing Same - A lens plate includes a transparent substrate wafer, and a plurality of lenses and spacers that are formed of a single portion of material on the transparent substrate wafer. An assembly includes a first lens plate that includes a first transparent substrate wafer, a plurality of first lenses and a plurality of spacers, the first lenses and spacers being formed of a single portion of material on said first transparent substrate wafer. The assembly also includes a second lens plate that includes a second transparent substrate wafer and a plurality of second lenses formed thereon, each of the plurality of second lenses corresponding to a respective one of the plurality of first lenses. The lens plates are aligned such that each of the plurality of first lenses aligns with the respective one of the plurality of second lenses, and the lens plates are bonded to one another. | 10-17-2013 |
20130265472 | METHOD, APPARATUS AND SYSTEM FOR REDUCING PIXEL CELL NOISE - Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces. | 10-10-2013 |
20130264688 | METHOD AND APPARATUS PROVIDING INTEGRATED CIRCUIT SYSTEM WITH INTERCONNECTED STACKED DEVICE WAFERS - An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a second conductor disposed within a second metal layer oxide is also included. A frontside of the first metal layer oxide is bonded to a frontside of the second metal layer oxide at an oxide bonding interface between the first metal layer oxide and the second metal layer oxide. A conductive path couples the first conductor to the second conductor with conductive material formed in a cavity etched between the first conductor and the second conductor and etched through the oxide bonding interface and through the second semiconductor layer from a backside of the second device wafer. | 10-10-2013 |
20130264467 | DOUBLE-SIDED IMAGE SENSOR - An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter. | 10-10-2013 |
20130264466 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING CLOCK AND CONTROL SIGNALS - An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers clock signals from the host controller to the image sensor through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal. | 10-10-2013 |
20130264465 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING IMAGE DATA AND CONTROL SIGNALS - An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers analog image data from the image sensor to the host controller through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal. | 10-10-2013 |
20130258182 | WAFER LEVEL CAMERA MODULE WITH PROTECTIVE TUBE - An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. A metal housing encloses the protective tube. The metal housing includes a housing foot adapted to secure the image sensor module between the housing foot of the metal housing and the protective tube. | 10-03-2013 |
20130258181 | WAFER LEVEL CAMERA MODULE WITH SNAP-IN LATCH - An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. The protective tube includes an outer wall having a snap-in latch element disposed thereon. A metal housing encloses the protective tube. The metal housing includes a housing foot and inner wall having an opposite snap-in latch element disposed thereon. The image sensor module is adapted to be secured between the housing foot of the metal housing and the protective tube when the opposite snap-in latch element of the metal housing is engaged with the snap-in latch element of the protective tube. | 10-03-2013 |
20130258144 | SYSTEM, APPARATUS AND METHOD FOR DARK CURRENT CORRECTION - Embodiments of the invention describe a system, apparatus and method for obtaining black reference pixels for dark current correction processing are described herein. Embodiments of the invention capture image signal data via a plurality of pixel cells of a pixel unit of an image device, wherein capturing image signal data involves establishing a first state of exposing incident light on each pixel of the pixel unit and a second state of shielding incident light from one or more pixels of the pixel unit via a shutter unit disposed over the pixel unit. Image signal data from each pixel of the pixel unit captured during the first state and the second state is read, and scene image data is created by combining a subset of image signal data captured during the first state with a dark current component including a subset of image signal data captured during the second state. | 10-03-2013 |
20130256822 | METHOD AND DEVICE WITH ENHANCED ION DOPING - Techniques for providing a pixel cell which exhibits improved doping in a semiconductor substrate. In an embodiment, a first doping is performed through a backside of the semiconductor substrate. After the first doping, the semiconductor substrate is thinned to expose a front side which is opposite of the backside. In another embodiment, a second doping is performed through the exposed front side of the thinned semiconductor substrate to form at least part of a pixel cell structure. | 10-03-2013 |
20130256510 | IMAGING DEVICE WITH FLOATING DIFFUSION SWITCH - Embodiments of the invention describe utilizing dual floating diffusion switches to enhance the dynamic range of pixels having multiple photosensitive elements. The insertion of dual floating diffusion switches between floating diffusion nodes of said photosensitive elements allows the conversion gain to be controlled and selected for each photosensitive element of a pixel. Furthermore, in embodiments utilizing a photosensitive element for high conversion gains, the value of high conversion gain for the respective photosensitive element maybe increased due to the separation between floating diffusion nodes, enabling high sensitivity for low-light conditions. | 10-03-2013 |
20130256509 | DUAL SOURCE FOLLOWER PIXEL CELL ARCHITECTURE - Techniques for providing a pixel cell which includes two source follower transistors. In an embodiment, a first source follower transistor of a pixel cell and a second source follower transistor of the pixel cell are coupled in parallel with one another, where the source follower transistors are each coupled via their respective gates to a floating diffusion node of the pixel cell. In another embodiment, the first source follower transistor and second source follower transistor each operate based on a voltage of the floating diffusion node to provide a respective component of an amplification signal, where the pixel cell outputs an analog signal based on the amplification signal. | 10-03-2013 |
20130248937 | ENTRENCHED TRANSFER GATE - An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node. | 09-26-2013 |
20130237280 | IMAGE SENSOR HAVING A PULSED MODE OF OPERATION - An image sensor includes a pixel array having a plurality of pixels. A readout circuit is coupled to the pixel array. A controller circuit is coupled to control the pixel array and is coupled to the readout circuit to receive array data from the pixel array. The controller circuit includes a mode control logic unit providing logic which when executed causes the image sensor operate in an idle mode of operation and then sample in response to receiving an event signal array data received from the pixel array in a pulsed mode of operation. A pattern in the array data samples over time is recognized and a mode of operation is selected in response to the recognized pattern. | 09-12-2013 |
20130234029 | IMAGE SENSOR FOR TWO-DIMENSIONAL AND THREE-DIMENSIONAL IMAGE CAPTURE - An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array. | 09-12-2013 |
20130228691 | CIRCUIT CONFIGURATION AND METHOD FOR TIME OF FLIGHT SENSOR - An apparatus includes a photodiode, a first and second storage transistor, a first and second transfer transistor, and a first and second output transistor. The first transfer transistor selectively transfers a first portion of the image charge from the photodiode to the first storage transistor for storing over multiple accumulation periods. The first output transistor selectively transfers a first sum of the first portion of the image charge to a readout node. The second transfer transistor selectively transfers a second portion of the image charge from the photodiode to the second storage transistor for storing over the multiple accumulation periods. The second output transistor selectively transfers a second sum of the second portion of the image charge to the readout node. | 09-05-2013 |
20130221194 | ENHANCED PIXEL CELL ARCHITECTURE FOR AN IMAGE SENSOR - A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less than at least one of a line impedance of a transfer signal line or a line impedance of a reset signal line. | 08-29-2013 |
20130217173 | METHODS OF FORMING VARYING DEPTH TRENCHES IN SEMICONDUCTOR DEVICES - A method of forming trenches in a semiconductor device includes forming an etchant barrier layer above a first portion of a semiconductor layer. A first trench is etched in a second portion of the semiconductor layer using a first etchant. The second portion of the semiconductor layer is not disposed underneath the etchant barrier layer. The etchant barrier layer is etched through using a second etchant that does not substantially etch the semiconductor layer. A second trench is etched in the first portion of the semiconductor layer using a third etchant. The third etchant also extends a depth of the first trench. | 08-22-2013 |
20130214375 | PAD AND CIRCUIT LAYOUT FOR SEMICONDUCTOR DEVICES - An apparatus includes an image sensor with a frontside and a backside. The image sensor includes an active circuit region and bonding pads. The active circuit region has a first shape that is substantially rectangular. The substantially rectangular first shape has first chamfered corners. A perimeter of the frontside of the image sensor has a second shape that is substantially rectangular. The second substantially rectangular shape has second chamfered corners. The bonding pads are disposed on the frontside of the image sensor. The bonding pads are disposed between the first chamfered corners and the second chamfered corners. The first shape is disposed inside the second shape. | 08-22-2013 |
20130208081 | METHOD FOR COMBINING IMAGES - A method for combining images includes capturing a first image including a subject from a first camera. A second image is captured from a second camera and the second image includes the subject. First pre-processing functions are applied on the first image to produce a first processed image. The first pre-processing functions include applying a distortion component of a rotation matrix to the first image. The rotation matrix defines a corrected relationship between the first and the second image. Second pre-processing functions are applied on the second image to produces a second processed image. The second pre-processing functions include applying the rotation matrix to the second image. The first processed image and the second processed image are blended in a processing unit to form a composite image. | 08-15-2013 |
20130207212 | LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS - A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer. | 08-15-2013 |
20130206959 | BLACK LEVEL CORRECTION FOR IMAGING PIXELS - A technique for obtaining a corrected pixel value is disclosed. The technique includes measuring a first dark current of a dark calibration pixel of a pixel array and measuring a second dark current of an imaging pixel of the pixel array. A dark current ratio is calculated based on the first dark current and the second dark current. An image charge is acquired with the imaging pixel where the image charge is accumulated over a first time period. A charge is acquired with the dark calibration pixel where the charge is accumulated over a second time period. The second time period is approximately equal to the first time period divided by the dark current ratio. A corrected imaging pixel value is calculated using a first readout from the imaging pixel and a second readout from the dark calibration pixel. | 08-15-2013 |
20130200396 | PREVENTION OF LIGHT LEAKAGE IN BACKSIDE ILLUMINATED IMAGING SENSORS - An apparatus includes a semiconductor layer, a dielectric layer, and a light prevention structure. The semiconductor layer has a front surface and a backside surface. The semiconductor layer includes a light sensing element and a periphery circuit region containing a light emitting element and not containing the light sensing element. The dielectric layer contacts at least a portion of the backside surface of the semiconductor layer. At least a portion of the light prevention structure is disposed between the light sensing element and the light emitting element. The light prevention structure is positioned to prevent light emitted by the light emitting element from reaching the light sensing element. | 08-08-2013 |
20130193305 | VARIABLE VOLTAGE ROW DRIVER FOR CMOS IMAGE SENSOR - An example image sensor includes a plurality of pixels arranged in an array of columns and rows, a row driver, and a control logic circuit. The row driver is coupled to pixels in a row of the array to provide a variable driving voltage to drive transistors included in the pixels of the row. The control logic circuit is coupled to provide one or more control logic signals to the row driver. The row driver adjusts a magnitude of the driving voltage in response to the one or more control logic signals. | 08-01-2013 |
20130188023 | IMAGE SENSOR WITH OPTICAL FILTERS HAVING ALTERNATING POLARIZATION FOR 3D IMAGING - An image sensor for three-dimensional (“3D”) imaging includes a first, a second, and a third pixel unit, where the second pixel unit is disposed between the first and third pixel units. Optical filters included in the pixel units are disposed on a light incident side of the image sensor to filter polarization-encoded light having a first polarization and a second polarization to photosensing regions of the pixel units. The first pixel unit includes a first optical filter having the first polarization, the second pixel unit includes a second optical filter having the second polarization, and the third pixel unit includes a third optical filter having the first polarization. | 07-25-2013 |
20130187027 | IMAGE SENSOR WITH INTEGRATED AMBIENT LIGHT DETECTION - An image sensor having an image acquisition mode and an ambient light sensing mode includes a pixel array having pixel cells organized into rows and columns for capturing image data and ambient light data. Readout circuitry is coupled via column bit lines to the pixels cells to read out the image data along the column bit lines. An ambient light detection (“ALD”) unit is selectively coupled to the pixel array to readout the ambient light data and to generate an ambient light signal based on ambient light incident upon the pixel array. Control circuitry is coupled to the pixel array to control time sharing of the pixels cells between the readout circuitry during image acquisition and the ALD unit during ambient light sensing. | 07-25-2013 |
20130181119 | SHARED TIME OF FLIGHT PIXEL - A time of flight pixel includes a photodiode that accumulates charge in response to light incident upon the photodiode. A first transfer transistor is couple between the photodiode and a first charge storage device to selectively transfer charge to the first charge storage device from the photodiode. A second transfer transistor coupled between the photodiode and a second charge storage device to selectively transfer charge to the second charge storage device from the photodiode. An enable transistor is coupled between the first charge storage device and a readout node coupled to the second charge storage device to selectively couple the first charge storage device to the readout node. An amplifier transistor having a gate is also coupled to a readout node. | 07-18-2013 |
20130147994 | Imaging System And Method Having Extended Depth of Field - An imaging system and method having a selected depth of field include an imaging lens for forming images of an object, the imaging lens having chromatic aberration and a color image sensor for receiving the images of the object. The color image sensor has a selected spectral response, the selected spectral response of the color image sensor defining a selected first center wavelength, a selected second center wavelength and a selected third center wavelength, wherein the selected first center wavelength is larger than the selected second center wavelength and the selected second center wavelength is larger than the selected third center wavelength. The selected spectral response defines the depth of field of the imaging system. A difference between the selected first center wavelength and the selected third center wavelength is greater than 150 nm. | 06-13-2013 |
20130147965 | IR-CUT FILTER HAVING RED ABSORBING LAYER FOR DIGITAL CAMERA - An infrared cut filter may be used with an image sensor to remove infrared light components from image light received from a first side of the infrared cut filter prior to the image light reaching the image sensor to be disposed on a second side of the infrared cut filter. The infrared cut filter includes at least one red absorbing layer and an infrared reflector. The at least one red absorbing layer partially absorbs red light components within the image light. The infrared reflector reflects the infrared light components. The infrared reflector is disposed between the red absorbing layer and the first side of the infrared cut filter while the at least one red absorbing layer is disposed between the infrared reflector and the second side of the infrared cut filter. | 06-13-2013 |
20130140432 | BACKSIDE-ILLUMINATED (BSI) PIXEL INCLUDING LIGHT GUIDE - Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed. | 06-06-2013 |
20130122637 | SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR - A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring. | 05-16-2013 |
20130122261 | Spacer Wafer For Wafer-Level Camera And Method Of Manufacturing Same - A spacer wafer for a wafer-level camera and a method of manufacturing the spacer wafer include positioning a substrate in an additive manufacturing device and forming the spacer wafer over the substrate. The spacer wafer is formed by an additive manufacturing process. | 05-16-2013 |
20130122247 | Spacer Wafer For Wafer-Level Camera And Method For Manufacturing Same - A spacer wafer for a wafer-level camera, a wafer-level camera including the spacer wafer and a method of manufacturing a spacer wafer include a layer of photoresist being formed over a substrate, the layer of photoresist being exposed to radiation through a mask that defines a spacer geometry for at least one wafer-level camera element. The layer photoresist is developed, such that the layer of photoresist is the spacer wafer for the wafer-level camera. | 05-16-2013 |
20130120619 | ANALOG ROW BLACK LEVEL CALIBRATION FOR CMOS IMAGE SENSOR - A CMOS image sensor includes an image pixel array, a dark pixel array, data bit liens, reference bit lines, a driver, comparators, and analog-to-digital converter (“ADC”) circuits. The image pixel array generates analog image signals in response to incident light. The dark pixel array generates analog black reference signals for analog black level calibration of the analog image signals. In one embodiment, the data bit lines each coupled to a different column of image pixels of the image pixel array and the reference bit lines each coupled to a different column of black reference pixels within the dark pixel array. The driver is coupled to the reference bit lines to drive an analog black reference signal. The comparators each couple to one of the data bit lines and each coupled to an output of the driver and offset the analog image signals with the analog black reference signals in an analog domain. The ADC circuits each coupled to an output of a comparator. | 05-16-2013 |
20130113969 | METHOD, APPARATUS AND SYSTEM FOR PROVIDING IMPROVED FULL WELL CAPACITY IN AN IMAGE SENSOR PIXEL - Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle. | 05-09-2013 |