20080197440 | Nonvolatile Memory - To provide a nonvolatile memory which realizes nonvolatile characteristic similar to a flash memory and a high-speed access equivalent to SRAM, has an integration degree exceeding that of DRAM, requires low voltage and low power consumption, and can be driven by a small-size battery, there are provided: (1) a non-volatile memory, including: a pair of metal electrodes; and a nano-hole-containing metal oxide film having a film thickness of 0.05 μm to 5 μm, which has a honeycomb structure and is provided between the pair of metal electrodes in a Schottky junction state, to use an interface state produced in a partition wall of the nano-hole-containing metal oxide film as a memory charge holder; and (2) a non-volatile memory, including: a substrate electrode; a nano-hole-containing metal oxide film formed by anodic oxidation of a surface of the substrate electrode; and a metal electrode formed to an upper end portion of a partition wall of the nano-hole-containing metal oxide film by Schottky junction, in which the nano-hole-containing metal oxide film has a structure in which a plurality of double Schottky barriers are formed in parallel. | 08-21-2008 |