MICRALYNE INC. Patent applications |
Patent application number | Title | Published |
20140252506 | SEMI-CONDUCTOR SENSOR FABRICATION - Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a central dielectric layer above the first semiconductor layer; a second semiconductor layer in contact with the at least one conductive via, and which defines a MEMS cavity; a third semiconductor layer disposed above the second semiconductor layer, and which includes a sensor element aligned with the MEMS cavity; a cap bonded to the third semiconductor to enclose and hermetically seal the MEMS cavity; wherein the third semiconductor layer separates the cap and the second semiconductor layer. | 09-11-2014 |
20140036330 | MEMS DEVICE WITH INDEPENDENT ROTATION IN TWO AXES OF ROTATION - A MEMS arrangement is provided that has a top plane containing a rotatable element such as a mirror. There is a middle support frame plane, and a lower electrical substrate plane. The rotatable element is supported by a support frame formed in the middle support frame plane so as to be rotatable with respect to the frame in a first axis of rotation. The frame is mounted so as to be rotatable with respect to a second axis of rotation. Rotation in the first axis of rotation is substantially independent of rotation in the second axis of rotation. | 02-06-2014 |
20120119311 | SEMI-CONDUCTOR SENSOR FABRICATION - Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a central dielectric layer above the first semiconductor layer; a second semiconductor layer in contact with the at least one conductive via, and which defines a MEMS cavity; a third semiconductor layer disposed above the second semiconductor layer, and which includes a sensor element aligned with the MEMS cavity; a cap bonded to the third semiconductor to enclose and hermetically seal the MEMS cavity; wherein the third semiconductor layer separates the cap and the second semiconductor layer. | 05-17-2012 |
20100265555 | MEMS DEVICE WITH INDEPENDENT ROTATION IN TWO AXES OF ROTATION - A MEMS arrangement is provided that has a top plane containing a rotatable element such as a mirror. There is a middle support frame plane, and a lower electrical substrate plane. The rotatable element is supported by a support frame formed in the middle support frame plane so as to be rotatable with respect to the frame in a first axis of rotation. The frame is mounted so as to be rotatable with respect to a second axis of rotation. Rotation in the first axis of rotation is substantially independent of rotation in the second axis of rotation. | 10-21-2010 |
20090268270 | MEMS DEVICE WITH INDEPENDENT ROTATION IN TWO AXES OF ROTATION - A MEMS arrangement is provided that has a top plane containing a rotatable element such as a mirror. There is a middle support frame plane, and a lower electrical substrate plane. The rotatable element is supported by a support frame formed in the middle support frame plane so as to be rotatable with respect to the frame in a first axis of rotation. The frame is mounted so as to be rotatable with respect to a second axis of rotation. Rotation in the first axis of rotation is substantially independent of rotation in the second axis of rotation. | 10-29-2009 |