MEMC ELECTRONIC MATERIALS, INC. Patent applications |
Patent application number | Title | Published |
20140273748 | SINGLE SIDE POLISHING USING SHAPE MATCHING - A method of polishing a wafer is disclosed that includes determining a removal profile. The wafer is measured to determine a starting wafer profile and then the wafer is polished. The wafer is again measured after being polished to determine a polished wafer profile. The starting wafer profile and the polished wafer profile are compared to each other to determine the removal profile by computing the amount and shape of material removed from the first wafer during polishing. | 09-18-2014 |
20140273409 | GAS DISTRIBUTION PLATE FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS OF USING SAME - In one aspect, a system for depositing a layer on a substrate is provided. The system includes a processing chamber, a gas injecting port, a gas distribution plate, and a plug. The gas injecting port is disposed upstream from the processing chamber. The gas distribution plate is disposed between the gas injecting port and the processing chamber, and includes an elongate planar body and an array of holes therein. The plug is sized to be received within one of the holes, and includes an orifice therethrough for permitting the passage of gas. The plug is capable of being removably secured to the gas distribution plate within one of the holes. | 09-18-2014 |
20140183806 | SYSTEM AND METHOD FOR ALIGNING AN INGOT WITH MOUNTING BLOCK - An alignment system for aligning an ingot of semiconductor or solar-grade material is provided. The alignment system includes a mounting block for attachment to the ingot, an optical device for aligning a predetermined centerline of the ingot with a reference line, and adjustable supports configured for supporting the ingot on at least four support points and configured to adjust the position of the ingot. The mounting block is movable between a horizontal position and a vertical position. | 07-03-2014 |
20140182115 | METHODS FOR ALIGNING AN INGOT WITH MOUNTING BLOCK - A method of aligning an ingot of semiconductor or solar-grade material with a mounting block includes supporting the ingot using adjustable supports, aligning a predetermined centerline of the ingot with a reference line using a laser, and attaching the mounting block to the ingot such that the predetermined centerline remains aligned with the reference line. | 07-03-2014 |
20140112831 | Using Wavelet Decomposition To Determine the Fluidization Quality In a Fluidized Bed Reactor - A method and apparatus for determining the fluidization quality of a fluidized bed reactor is disclosed. The method includes measuring pressure within the fluidized bed reactor to obtain a pressure signal. The pressure signal is then transformed using wavelet decomposition into higher-frequency details and lower-frequency approximations. The dominance of the various features is then calculated based on the energy of each feature in relation to the normalized wavelet energies. The fluidization quality of the fluidized bed reactor is then determined from a comparison over time of the calculated energies. | 04-24-2014 |
20130276695 | SUSCEPTOR ASSEMBLIES FOR SUPPORTING WAFERS IN A REACTOR APPARATUS - Apparatus and methods for wafer processes such as etching and chemical vapor deposition processes are disclosed. In some embodiments, the apparatus includes a susceptor and a ring disposed beneath the susceptor to influence a thickness of the deposited epitaxial layer. | 10-24-2013 |
20130263779 | Susceptor For Improved Epitaxial Wafer Flatness - A susceptor for supporting a semiconductor wafer during an epitaxial chemical vapor deposition process, the susceptor defining a wafer diameter, the susceptor includes a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than the wafer diameter. The susceptor includes a set of holes circumferentially disposed at a first susceptor diameter, the set of holes is evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a predetermined orientation. | 10-10-2013 |
20130263776 | Methods For Fabricating A Semiconductor Wafer Processing Device - A method of fabricating a semiconductor processing device includes providing a susceptor including a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than a wafer diameter. The method also includes providing a set of holes circumferentially disposed at a first susceptor diameter, the set of holes being evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a set of predetermined orientations. | 10-10-2013 |
20130237032 | Method of Manufacturing Silicon-On-Insulator Wafers - A method is provided for preparing multilayer semiconductor structures, such as silicon-on-insulator wafers, having reduced warp and bow. Reduced warp multilayer semiconductor structures are prepared by forming a dielectric structure on the exterior surfaces of a bonded pair of a semiconductor device substrate and a semiconductor handle substrate having an intervening dielectric layer therein. Forming a dielectric layer on the exterior surfaces of the bonded pair offsets stresses that may occur within the bulk of the semiconductor handle substrate due to thermal mismatch between the semiconductor material and the intervening dielectric layer as the structure cools from process temperatures to room temperatures. | 09-12-2013 |
20130236367 | PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP SYSTEMS - Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon. | 09-12-2013 |
20130195432 | TRICHLOROSILANE VAPORIZATION SYSTEM - A heat exchanger for vaporizing a liquid and a method of using the same are disclosed. The heat exchanger includes a housing, a tube, a heater, and a plurality of non-reactive members. The tube is disposed in the interior of the housing and has an inlet and an outlet. The heater is configured to heat the tube. The plurality of non-reactive members are disposed in an interior cavity of the tube in an arrangement such that a plurality of voids are defined between the members and the tube. The arrangement also permits liquid to pass through the voids and travel from the inlet of the tube to the outlet of tube. The plurality of non-reactive members and the tube transfer heat to the liquid as the liquid passes through the plurality of voids in order to vaporize the liquid. | 08-01-2013 |
20130179094 | Symmetry Based Air Pocket Detection Methods and Systems - Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix; determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half; calculating, by the processor, a first index value based on the determined differences; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold. | 07-11-2013 |
20130176454 | Air Pocket Detection Methods and Systems - Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; determining, by a processor, a difference between data units of the matrix and a corresponding data unit of the matrix, wherein the corresponding data unit is defined by a first operation of the matrix; calculating, by the processor, a first index value based on the differences of the corresponding data units; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold. | 07-11-2013 |
20130174829 | Methods For Mounting An Ingot On A Wire Saw - Methods are disclosed for determining mounting locations of ingots on a wire saw machine. The methods include measuring a test surface of a test wafer previously sliced by the wire saw machine from a test ingot to calibrate the system. A magnitude and a direction of an irregularity of the measured test surface of the test wafer is then determined. The mounting location is then determined for another ingot to be mounted on the ingot holder based on at least one of the magnitude and direction of the irregularity of the measured test surface of the test wafer. | 07-11-2013 |
20130174605 | PROCESSES AND SYSTEMS FOR PURIFYING SILANE - Processes and systems for purifying silane-containing streams and, in particular, for purifying silane-containing streams that also contain ethylene are disclosed. The processes and systems may be arranged such that one or more ethylene reactors are downstream of light-end distillation operations. | 07-11-2013 |
20130168836 | SOI STRUCTURES HAVING A SACRIFICIAL OXIDE LAYER - Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. | 07-04-2013 |
20130168802 | SOI STRUCTURES WITH REDUCED METAL CONTENT - Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. | 07-04-2013 |
20130137241 | METHOD FOR THE PREPARATION OF A MULTI-LAYERED CRYSTALLINE STRUCTURE - This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure. | 05-30-2013 |
20130136686 | METHODS FOR PRODUCING ALUMINUM TRIFLUORIDE - Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride. | 05-30-2013 |
20130133567 | SYSTEMS AND PROCESSES FOR CONTINUOUS GROWING OF INGOTS - An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. | 05-30-2013 |
20130133407 | Methods For Analysis Of Water And Substrates Rinsed In Water - A method is disclosed for determining metal content in a container of water. The method includes contacting a substrate with the water for a predetermined period of time. The substrate is then dried and analyzed to determine the metal content of the substrate surface. A determination is then made of the metal content in the water from the metal content on the substrate surface. | 05-30-2013 |
20130129973 | CRUCIBLES WITH A REDUCED AMOUNT OF BUBBLES AND INGOTS AND WAFERS PRODUCED BY USE OF SUCH CRUCIBLES - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130129921 | METHODS FOR PRODUCING CRUCIBLES WITH A REDUCED AMOUNT OF BUBBLES - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130125719 | PROCESSES FOR PRODUCING SILICON INGOTS - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130125587 | METHODS FOR PRODUCING CRUCIBLES WITH A REDUCED AMOUNT OF BUBBLES - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130121888 | SYSTEMS FOR PRODUCING SILANE - Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen. | 05-16-2013 |
20130121802 | Wafer Transport Cart - Systems and methods are disclosed for transporting wafers to a processing apparatus. The system comprises a frame having a support sized for receiving a wafer assembly including the wafers. An alignment system is connected to the frame. The alignment system is disposed for guiding the wafer assembly to a first position as the wafer assembly is lowered onto the support of the frame. The alignment system reduces the amount of time required to transport the wafers to the processing apparatus. | 05-16-2013 |
20130118962 | Systems For Processing Abrasive Slurry - Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry. | 05-16-2013 |
20130118091 | Methods For Processing Abrasive Slurry - Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry. | 05-16-2013 |
20130105539 | CLAMPING APPARATUS FOR CLEAVING A BONDED WAFER STRUCTURE | 05-02-2013 |
20130105538 | METHODS FOR CLEAVING A BONDED WAFER STRUCTURE | 05-02-2013 |
20130099195 | Direct Formation of Graphene on Semiconductor Substrates - The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the carbon-containing layer, which forms graphene directly upon the semiconductor substrate upon cooling. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes diffusion of carbon atoms into the metal film, which, upon cooling, segregate and precipitate into a layer of graphene directly on the semiconductor substrate. | 04-25-2013 |
20130087132 | Systems and Methods For Connecting An Ingot To A Wire Saw - Systems and methods are disclosed for connecting an ingot to a wire saw with an ingot holder, a bond beam, and a bar. The bar has an angled mating surface that engages a recessed surface formed in a slot of the bond beam. Mechanical fasteners are used to connect the tee bar to the ingot holder. The angle of the mating surface with respect to the recessed surface of the slot prevents deformation of the bond beam and prevents compromising the integrity of the adhesive bond between the ingot and the bond beam. | 04-11-2013 |
20130084234 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF SILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 04-04-2013 |
20130084233 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF SILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 04-04-2013 |
20130062020 | Systems and Methods for Cleaving A Bonded Wafer Pair - Systems and methods are provided for mechanically cleaving a bonded wafer pair by controlling the rate of cleaving. This controlled rate of cleaving results in a reduction or elimination of non-uniform thickness variations in the cleaved surface of the resulting SOI wafer. One embodiment uses flexible chucks attached to the faces of the wafers and actuators attached to the flexible chucks to cleave the bonded wafer pair. Other embodiments also use rollers in contact with the surfaces to control the rate of cleaving. | 03-14-2013 |
20130004405 | PROCESSES FOR PRODUCING SILANE IN A BUBBLE COLUMN - Methods for producing silane by reacting a hydride and a halosilane are disclosed. Some embodiments involve use of a column which is not mechanically agitated and in which reactants may be introduced in a counter-current arrangement. Some embodiments involve use of a baffled column which has multiple reaction zones. | 01-03-2013 |
20120279438 | METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED INCIDENCE OF DISLOCATIONS - Methods for reducing or even eliminating dislocations in Czochralski-grown silicon ingots are disclosed. Generally, the methods involve controlling the growth conditions of the neck prior to formation of the ingot body. | 11-08-2012 |
20120247686 | Systems and Methods For Ultrasonically Cleaving A Bonded Wafer Pair - Systems and methods for the ultrasonic cleaving of bonded wafer pairs are described. The system includes a tank for containing a volume of liquid, a wafer boat having a recess formed therein for receiving the bonded wafer pair. The recess has a pair of opposing, spaced-apart sidewalls disposed at an angle from a vertical axis. An ultrasonic agitator is configured to ultrasonically agitate the volume of liquid. The ultrasonic agitation of the volume of liquid results in the cleaving of the bonded wafer pair. | 10-04-2012 |
20120238070 | METHODS FOR PRODUCING SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN THE HANDLE WAFER - Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps. | 09-20-2012 |
20120235283 | SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN THE HANDLE WAFER - Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps. | 09-20-2012 |
20120230903 | METHODS FOR INTRODUCTING A FIRST GAS AND A SECEOND GAS INTO A REACTION CHAMBER - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 09-13-2012 |
20120193753 | METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS - Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. | 08-02-2012 |
20120189527 | PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERATIONS - Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon. | 07-26-2012 |
20120189501 | PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP SYSTEMS THAT INVOLVE DISPROPORTIONATION OPERATIONS - Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon. | 07-26-2012 |
20120173170 | SYSTEMS AND METHODS FOR PARTICLE SIZE DETERMINATION AND CONTROL IN A FLUIDIZED BED REACTOR - Systems and methods are provided for determining the size of particles within a fluidized bed reactor. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor. A dosing system and method is provided for measuring defined volumes of particles for transport to the reactor. | 07-05-2012 |
20120173165 | SYSTEMS AND METHODS FOR PARTICLE SIZE DETERMINATION AND CONTROL IN A FLUIDIZED BED REACTOR FOR USE WITH THERMALLY DECOMPOSABLE SILICON-CONTAINING GAS - Systems and methods are provided for determining the size of particles within a fluidized bed reactor for use with thermally decomposable silicon-containing gas. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor. | 07-05-2012 |
20120164323 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF DICHLOROSILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 06-28-2012 |
20120164033 | SYSTEMS FOR PRODUCING SILANE - Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen. | 06-28-2012 |
20120160702 | METHODS FOR PRODUCING SILANE - Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen. | 06-28-2012 |
20120115258 | METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IN A PROCESS - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 05-10-2012 |
20120100061 | Production of Polycrystalline Silicon in Substantially Closed-loop Processes - Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon. | 04-26-2012 |
20120100059 | Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor - Processes for producing polycrystalline silicon by thermal decomposition of trichlorosilane are disclosed. The processes generally involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 04-26-2012 |
20120100042 | Production of Polycrystalline Silicon in Substantially Closed-Loop Systems - Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon. | 04-26-2012 |
20120080304 | Processes for Recovering Silane From Heavy-Ends Separation Operations - Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations. | 04-05-2012 |
20120080303 | Systems for Recovering Silane From Heavy-Ends Separation Operations - Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations. | 04-05-2012 |
20120079848 | SYSTEMS FOR PURIFYING SILANE - Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations. | 04-05-2012 |
20120079847 | PROCESSES FOR PURIFYING SILANE - Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations. | 04-05-2012 |
20120077138 | Low Thermal Mass Semiconductor Wafer Boat - A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer. | 03-29-2012 |
20120074081 | Low Thermal Mass Semiconductor Wafer Plate - A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer. | 03-29-2012 |
20120073752 | Adapter Ring For Silicon Electrode - Methods and systems are provided for retrofitting wafer etching systems. The methods and systems use an adapter ring to retrofit wafer etching systems designed for use with multiple piece electrodes such that single piece electrodes can be used in the etching systems. A portion of the adapter ring is disposed in a receptacle formed in a thermal coupled plate in the wafer etching system. Another portion of the adapter ring is positioned in a channel formed in an upper electrode. | 03-29-2012 |
20120028555 | Grinding Tool For Trapezoid Grinding Of A Wafer - A grinding tool for trapezoid grinding of a wafer on a profiling machine includes an annular wheel including a central hole adapted for mounting the wheel on a spindle. The wheel includes at least two grooves disposed at an outer edge of the wheel and the grooves are sized for receiving an outer edge of the wafer. At least one of the grooves is adapted for rough grinding of the wafer. At least one other of the grooves is adapted for fine grinding of the wafer. | 02-02-2012 |
20120028439 | Semiconductor And Solar Wafers And Method For Processing Same - A method for manufacturing a silicon-on-insulator structure including a substrate wafer, an active wafer, and an oxide layer between the substrate wafer and the active wafer. The method includes the steps of heat treating the structure, trapezoid grinding edges of the wafer, and grinding a surface of the wafer. | 02-02-2012 |
20120027660 | METHODS TO RECOVER AND PURIFY SILICON PARTICLES FROM SAW KERF - The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material. | 02-02-2012 |
20120025353 | Semiconductor And Solar Wafers - A silicon-on-insulator or bonded wafer includes an upper portion having a trapezoid shape in cross-section and a lower portion having an outer peripheral edge having a curved shape. | 02-02-2012 |
20120024761 | METHODS TO SLICE A SILICON INGOT - The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material. | 02-02-2012 |
20120003814 | Methods For In-Situ Passivation Of Silicon-On-Insulator Wafers - Methods and systems are disclosed for performing a passivation process on a silicon-on-insulator wafer in a chamber in which the wafer is cleaved. A bonded wafer pair is cleaved within the chamber to form the silicon-on-insulator (SOI) wafer. A cleaved surface of the SOI wafer is then passivated in-situ by exposing the cleaved surface to a passivating substance. This exposure to a passivating substance results in the formation of a thin layer of oxide on the cleaved surface. The silicon-on-insulator wafer is then removed from the chamber. In other embodiments, the silicon-on-insulator wafer is first transferred to an adjoining chamber where the wafer is then passivated. The wafer is transferred to the adjoining chamber without exposing the wafer to the atmosphere outside the chambers. | 01-05-2012 |
20110318912 | Methods for preparing a semiconductor wafer with high thermal conductivity - This invention generally relates to an epitaxial silicon semiconductor wafer with increased thermal conductivity to transfer heat away from a device layer, while also having resistance to common failure mechanisms, such as latch-up failures and radiation event failures. The semiconductor wafer comprises a lightly-doped device layer, a highly-doped protective layer, and a lightly-doped substrate. The invention is also directed to a process for forming such an epitaxial silicon wafer. | 12-29-2011 |
20110300050 | Trichlorosilane Vaporization System - A heat exchanger for vaporizing a liquid and a method of using the same are disclosed herein. The heat exchanger includes a housing, a tube, a heater, and a plurality of non-reactive members. The tube is disposed in the interior of the housing and has an inlet and an outlet. The heater is configured to heat the tube. The plurality of non-reactive members are disposed in an interior cavity of the tube in an arrangement such that a plurality of voids are defined between the members and the tube. The arrangement also permits liquid to pass through the voids and travel from the inlet of the tube to the outlet of tube. The plurality of non-reactive members and the tube transfer heat to the liquid as the liquid passes through the plurality of voids in order to vaporize the liquid. | 12-08-2011 |
20110297861 | Angle Of Repose Valve - An angle of repose valve for controlling the flow of granules and a method of repairing a leak in an angle of repose valve are disclosed herein. The angle of repose valve has a housing with an interior cavity, an inlet, and an outlet. A gas is used to convey granules through the valve and the housing has a thickness such that the gas can have a pressure of at least 70 psi. A saddle is disposed in the interior cavity of the housing and is coupled to a rotatable shaft that passes through an opening in the housing. A chevron seal is disposed between the shaft and a sealing member. A compression member is threadably engaged with the sealing member and is operable to exert force on the chevron seal to expand the chevron seal against the shaft and/or the housing to prevent and/or repair leaks of gas therethrough. | 12-08-2011 |
20110269316 | Wafer Support Ring - A wafer support ring and a method of using the same are disclosed herein. The support ring supports a wafer during a first processing operation. A top surface of the support ring is in contact with a first plurality of locations on a surface of the wafer during the first processing operation. A second wafer support structure is used to support the wafer during a second processing operation. A top surface of the second wafer support structure is in contact with a second, different plurality of locations on the surface of the wafer during the second processing operation. The wafer support ring may also have an outer lip disposed about an outer periphery of the support ring that has a depth such that it does not form part of the top surface of the support ring. | 11-03-2011 |
20110250739 | EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF - This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops. | 10-13-2011 |
20110244124 | METHODS FOR PRODUCING POLYCRYSTALLINE SILICON THAT REDUCE THE DEPOSITION OF SILICON ON REACTOR WALLS - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 10-06-2011 |
20110237160 | Hydrostatic Pad Pressure Modulation in a Simultaneous Double Side Wafer Grinder - Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer. | 09-29-2011 |
20110223741 | METHOD AND SYSTEM FOR STRIPPING THE EDGE OF A SEMICONDUCTOR WAFER - A method and a system are described herein for applying etchant to edges of a plurality of wafers. The system includes a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller. The cassette permits axial rotation of the wafers about an axis. A method of applying etchant to the edge of the wafer includes placing the wafer edge in contact with the roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contact an etchant contained in a sump during rotation so that etchant is applied to the wafer edge. | 09-15-2011 |
20110212550 | METHODS FOR DETECTING METAL PRECIPITATES IN A SEMICONDUCTOR WAFER - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 09-01-2011 |
20110212547 | METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IMPARTED INTO WAFERS DURING A SEMICONDUCTOR PROCESS - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 09-01-2011 |
20110207246 | METHODS FOR REDUCING THE WIDTH OF THE UNBONDED REGION IN SOI STRUCTURES - The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided. | 08-25-2011 |
20110204471 | SEMICONDUCTOR WAFERS WITH REDUCED ROLL-OFF AND BONDED AND UNBONDED SOI STRUCTURES PRODUCED FROM SAME - The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided. | 08-25-2011 |
20110177682 | SUPPRESSION OF OXYGEN PRECIPITATION IN HEAVILY DOPED SINGLE CRYSTAL SILICON SUBSTRATES - This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment. | 07-21-2011 |
20110163313 | BULK SILICON WAFER PRODUCT USEFUL IN THE MANUFACTURE OF THREE DIMENSIONAL MULTIGATE MOSFETS - A method for preparing a semiconductor structure for use in the manufacture of three dimensional transistors, the structure comprising a silicon substrate and an epitaxial layer, the epitaxial layer comprising an endpoint detection epitaxial region comprising an endpoint detection impurity selected from the group consisting of carbon, germanium, or a combination. | 07-07-2011 |
20110160891 | Systems For Generating Representations of Flatness Defects on Wafers - Systems and computer-readable media having computer-executable components are disclosed for generating a representation of flatness defects on a wafer. Data is received describing the thickness of the wafer at a plurality of points on a wafer divided into a plurality of sites. A reference plane is defined for each of the plurality of sites. For each of the sites, an upper plane and a lower plane are defined relative to the reference plane. A determination is made as to which of the plurality of points on the wafer represents a flatness defect by identifying which points are not disposed between the upper plane and lower plane. A representation is then generated depicting a location of each of the flatness defects on the wafer. In some embodiments, a single representation is generated depicting the location of flatness defects on a plurality of wafers. | 06-30-2011 |
20110160890 | Methods For Generating Representations of Flatness Defects on Wafers - Methods are disclosed for generating a representation of flatness defects on a wafer. Data is received describing the thickness of the wafer at a plurality of points on a wafer divided into a plurality of sites. A reference plane is defined for each of the plurality of sites. For each of the sites, an upper plane and a lower plane are defined relative to the reference plane. A determination is made as to which of the plurality of points on the wafer represents a flatness defect by identifying which points are not disposed between the upper plane and lower plane. A representation is then generated depicting a location of each of the flatness defects on the wafer. In some embodiments, a single representation is generated depicting the location of flatness defects on a plurality of wafers. | 06-30-2011 |
20110159668 | Methods For Processing Silicon On Insulator Wafers - Methods are provided for etching and/or depositing an epitaxial layer on a silicon-on-insulator structure comprising a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The cleaved surface of wafer is then etched while controlling a temperature of the reactor such that the etching reaction is kinetically limited. An epitaxial layer is then deposited on the wafer while controlling the temperature of the reactor such that a rate of deposition on the cleaved surface is kinetically limited. | 06-30-2011 |
20110159665 | METHOD FOR THE PREPARATION OF A MULTI-LAYERED CRYSTALLINE STRUCTURE - This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure. | 06-30-2011 |
20110158896 | Methods For Producing Aluminum Trifluoride - Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride. | 06-30-2011 |
20110158888 | METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS USING PERIPHERAL SILICON TETRACHLORIDE - Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide. | 06-30-2011 |
20110158882 | Methods For Producing Silicon Tetrafluoride - Methods for producing silicon tetrafluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce silicon tetrafluoride. | 06-30-2011 |
20110158857 | FLUIDIZED BED REACTOR SYSTEMS AND DISTRIBUTORS FOR USE IN SAME - Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide. | 06-30-2011 |
20110151592 | METHODS FOR MONITORING THE AMOUNT OF CONTAMINATION IMPARTED INTO SEMICONDUCTOR WAFERS DURING WAFER PROCESSING - Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants. | 06-23-2011 |
20110148128 | Semiconductor Wafer Transport System - A system and a wand are disclosed for the transport of a semiconductor wafer. The system and wand include a plate and a locator. The plate includes a plurality of plate outlets for directing gas flow against the wafer to hold the wafer using the Bernoulli principle. The locator extends from the plate and includes a locating outlet for directing a gas flow to locate the wafer laterally relative to the plate. The plate outlets and the locating outlet operate to prevent the wafer from contacting the plate or the locator. In some embodiments, a plurality of locators are used to locate the wafer laterally relative to the plate. | 06-23-2011 |
20110146717 | Systems And Methods For Analysis of Water and Substrates Rinsed in Water - A system and method are disclosed for predicting the amount of contaminants deposited on a substrate, such as a semiconductor wafer, after contact the wafer with water in a container. The contaminants may includes materials that negatively affect the properties of the wafer even when the amount of contaminants deposited on the surface of the wafer is below the threshold level of detection of known systems. The method includes contacting the wafer with water for a first period of time, the wafer having wafer surfaces, drying the wafer, analyzing the wafer to determine contaminants on the wafer surfaces, and predicting the amount of contaminants deposited on the wafer when contacting the wafer with water for a second period of time shorter than the first period of time. | 06-23-2011 |
20110101504 | Methods of Grinding Semiconductor Wafers Having Improved Nanotopology - Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels. | 05-05-2011 |
20110045740 | Methods and Systems For Adjusting Operation Of A Wafer Grinder Using Feedback from Warp Data - Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter. | 02-24-2011 |
20110017230 | Method and System for Processing Abrasive Slurry - Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry. | 01-27-2011 |
20110002835 | Methods For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt - Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots. | 01-06-2011 |
20110002819 | Pulling Assemblies For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt - Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots. | 01-06-2011 |
20100304022 | Methods of Making Wafer Supports - A method is disclosed for sandblasting a wafer support platform to create a surface having a uniform roughness. Contaminants become embedded in the surface during the sandblasting procedure. A layer is applied over the surface to isolate the contaminants from a supported wafer while maintaining the uniform roughness. | 12-02-2010 |
20100242836 | SYSTEMS FOR WEIGHING A PULLED OBJECT - Pulling systems are disclosed for measuring the weight of an object coupled to a first end of a cable. The cable is routed over a pulley suspended from a load cell. The force exerted by the cable on the pulley is used to calculate the weight of the object. The second end of the cable is coupled to a drum which when rotated pulls the object by wrapping the cable around the drum. An arm is coupled to the pulley at one end and to a frame at another end. A path traveled by the cable between the pulley and the drum is substantially parallel to a longitudinal axis of the arm. Horizontal force components are transmitted by the arm to the frame and do not affect a force component measured by the load cell, thus increasing the accuracy of the calculated weight of the object. | 09-30-2010 |
20100242831 | METHODS FOR WEIGHING A PULLED OBJECT HAVING A CHANGING WEIGHT - Methods are disclosed for pulling an object while measuring the weight of the object. The object is pulled upward using a cable extending over a first cylinder. The cable further extends over a second cylinder. The cable travels along a cable path between an uppermost portion of each of the outer circumferential portions of the first cylinder and the second cylinder. The first cylinder is restrained from movement parallel to the cable path with an arm having a first end and a second end. The first end is coupled to the first cylinder and the second end is coupled to either the second cylinder or a frame. The weight of the object is measured with a force measurement device. In some embodiments, the position of the cable with respect to the frame may be adjusted by a dampening system or a bushing. | 09-30-2010 |
20100242625 | SYSTEMS FOR WEIGHING A PULLED OBJECT HAVING A CHANGING WEIGHT - A system for measuring the weight of an object while pulling the object upward includes a puller having a frame and a cable having a first end coupled to the object and a second end engaging a second cylinder. At least a portion of the cable engages the outer circumferential surface of a first cylinder and the second cylinder. The apparatus also includes an upper arm and an actuator. A force measurement device is coupled to the first cylinder and to the upper arm and measures the weight of the object. The actuator is operable to lower and raise the weight measurement device and the first cylinder. In some embodiments, the position of the cable with respect to the frame may be adjusted by a dampening system or a bushing. | 09-30-2010 |
20100178225 | METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE - The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport. | 07-15-2010 |
20100163462 | METHODS TO RECOVER AND PURIFY SILICON PARTICLES FROM SAW KERF - The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material. | 07-01-2010 |
20100150808 | PROCESSES FOR PRODUCING SILICON TETRAFLUORIDE FROM FLUOROSILICATES IN A FLUIDIZED BED REACTOR - Processes for preparing silicon tetrafluoride by the thermal decomposition of an alkali or alkaline earth-metal fluorosilicate in a fluidized bed reactor. A portion of silicon tetrafluoride that is generated in the decomposition reaction may be recycled to the reactor and used as a fluidizing gas to suspend the fluorosilicate material. Alkali or alkaline earth-metal fluoride residue generated in the decomposition reaction may be discharged from the reactor and reacted with fluorosilicic acid to produce an alkali or alkaline earth-metal fluorosilicate that may be introduced to the reactor for further generation of silicon tetrafluoride. | 06-17-2010 |
20100150789 | SYSTEMS FOR PRODUCING SILICON TETRAFLUORIDE FROM FLUOROSILICATES IN A FLUIDIZED BED REACTOR - Systems for preparing silicon tetrafluoride by the thermal decomposition of an alkali or alkaline earth-metal fluorosilicate. The system includes a drying apparatus for removing moisture from a fluorosilicate feed; a fluidized bed reactor comprising a reaction chamber for thermal decomposition of fluorosilicate into silicon tetrafluoride gas and an alkali or alkaline earth-metal fluoride; a heater apparatus and an exhaust gas treatment system for treating gases discharged from the fluidized bed reactor. | 06-17-2010 |
20100132829 | METHOD FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING APPARATUS - A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position. | 06-03-2010 |
20100130021 | METHOD FOR PROCESSING A SILICON-ON-INSULATOR STRUCTURE - A method is disclosed for processing the cleaved surface of a silicon-on-insulator structure. The silicon-on-insulator structures comprises a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The methods disclosed include an etching process to reduce the time and cost required to process the silicon-on-insulator structure to remove the surface damage and defects formed when a portion of the donor wafer is separated along a cleave plane from the silicon-on-insulator structure. The method includes, annealing the structure, etching the cleaved surface, and performing a non-contact smoothing process on the cleaved surface. | 05-27-2010 |
20100107966 | METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH - Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging. | 05-06-2010 |
20100098519 | SUPPORT FOR A SEMICONDUCTOR WAFER IN A HIGH TEMPERATURE ENVIRONMENT - A wafer support for supporting a semiconductor wafer during a process including varied temperature. The wafer support includes a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer. The top surface has a recessed area including an inclined surface rising from a bottom of the recessed area. The inclined surface has an incline angle that is no more than about ten degrees. | 04-22-2010 |
20100087123 | Method For Assessing Workpiece Nanotopology Using A Double Side Wafer Grinder - A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance. | 04-08-2010 |
20100074825 | DIRECTIONAL SOLIDIFICATION FURNACE FOR REDUCING MELT CONTAMINATION AND REDUCING WAFER CONTAMINATION - A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon. | 03-25-2010 |
20100065696 | WAFER HOLDER FOR SUPPORTING A SEMICONDUCTOR WAFER DURING A THERMAL TREATMENT PROCESS - A wafer holder for holding a semiconductor wafer during a thermal wafer treatment process. The wafer holder includes at least three wafer supports. Each wafer support includes an upright shaft and a plurality of flexible fibers supported by the shaft in positions such that at least some of the fibers engage the semiconductor wafer when the wafer rests on the wafer supports. | 03-18-2010 |
20100031870 | GENERATING A PUMPING FORCE IN A SILICON MELT BY APPLYING A TIME-VARYING MAGNETIC FIELD - Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (I | 02-11-2010 |
20100009844 | CATALYSTS USEFUL IN THE PURIFICATION OF SILICON TETRAFLUORIDE - Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts. | 01-14-2010 |
20100009843 | PROCESSES FOR PREPARING A CATALYST - Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts. | 01-14-2010 |
20090324819 | METHODS FOR INCREASING POLYCRYSTALLINE SILICON REACTOR PRODUCTIVITY BY RECYCLE OF SILICON FINES - Processes for producing polycrystalline silicon include contacting silicon particles with a thermally decomposable silicon compound in a reaction chamber. A portion of the silicon decomposable compound decomposes to produce silicon dust which is discharged from and reintroduced into the reaction chamber. The discharged silicon dust agglomerates with the silicon particles. | 12-31-2009 |
20090324479 | FLUIDIZED BED REACTOR SYSTEMS AND METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 12-31-2009 |
20090321372 | LOW THERMAL MASS SEMICONDUCTOR WAFER SUPPORT - A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer. | 12-31-2009 |
20090320743 | Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation - A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt. | 12-31-2009 |
20090298399 | SEMICONDUCTOR WAFER POLISHING APPARATUS AND METHOD OF POLISHING - A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position. | 12-03-2009 |
20090266294 | METHOD AND DEVICE FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING APPARATUS - A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position. | 10-29-2009 |
20090252974 | EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF - This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops. | 10-08-2009 |
20090247055 | METHODS FOR ETCHING THE EDGE OF A SILICON WAFER - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. | 10-01-2009 |
20090246444 | EDGE ETCHED SILICON WAFERS - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. | 10-01-2009 |
20090242126 | EDGE ETCHING APPARATUS FOR ETCHING THE EDGE OF A SILICON WAFER - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. | 10-01-2009 |
20090233428 | Methods for preparing a semiconductor wafer with high thermal conductivity - This invention generally relates to an epitaxial silicon semiconductor wafer with increased thermal conductivity to transfer heat away from a device layer, while also having resistance to common failure mechanisms, such as latch-up failures and radiation event failures. The semiconductor wafer comprises a lightly-doped device layer, a highly-doped protective layer, and a lightly-doped substrate. The invention is also directed to a process for forming such an epitaxial silicon wafer. | 09-17-2009 |
20090199836 | CARBON NANOTUBE REINFORCED WIRESAW BEAM USED IN WIRESAW SLICING OF INGOTS INTO WAFERS - A wiresaw beam for use in an apparatus for slicing wafers from an ingot, such as semiconductor wafers from a single crystal ingot or a polycrystalline silicon ingot. The wiresaw beam may be made from a polymer composite material comprising a thermoset polymer resin and carbon nanotubes. | 08-13-2009 |
20090176441 | SYSTEM AND METHOD FOR DRESSING A WAFER POLISHING PAD - A system for polishing a semiconductor wafer. The system includes a polishing apparatus having a rotatable polishing pad for polishing the wafer. A dressing apparatus is mounted adjacent the polishing pad for dressing the polishing pad. The dressing apparatus includes a dressing member engageable with the polishing pad. A cleaning apparatus is mounted adjacent the polishing pad for removing particulate and chemicals from the polishing pad. The system includes a controller for controlling the dressing apparatus and the cleaning apparatus. | 07-09-2009 |
20090169346 | SEMICONDUCTOR WAFER CARRIER BLADE - A carrier blade for transferring a semiconductor wafers into and out of a deposition chamber may include transition surfaces sloping downward from ledge surfaces. The transition surfaces slope from the corresponding ledges at angles that are greater than about 90 degrees so that the edges between the ledge surfaces and the transition surfaces are not sharp. The carrier blade may include bevels extending from the ledge surface(s) to upper lateral edges of the carrier blade. | 07-02-2009 |
20090165721 | Susceptor with Support Bosses - A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process includes a body having opposing upper and lower surfaces. Support bosses extend downward from the lower face of the body. Each support boss has a boss opening sized and shaped for receiving a support post of a chemical vapor deposition device to mount the susceptor on the support post. | 07-02-2009 |
20090165719 | EPITAXIAL BARREL SUSCEPTOR HAVING IMPROVED THICKNESS UNIFORMITY - A barrel susceptor for supporting semiconductor wafers in a heated chamber having an interior space. Each of the wafers has a front surface, a back surface and a circumferential side. The susceptor includes a body having a plurality of faces arranged around an imaginary central axis of the body. Each face has an outer surface and a recess extending laterally inward into the body from the outer surface. Each recess is surrounded by a rim defining the respective recess. The susceptor also includes a plurality of ledges extending outward from the body. Each of the ledges is positioned in one of the recesses and includes an upward facing support surface for supporting a semiconductor wafer received in the recess. Each of the support surfaces is separate from the outer surface of the respective face. | 07-02-2009 |
20090130824 | ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING - A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates. | 05-21-2009 |
20090120353 | REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY-INSOLUBLE GASES INTO THE MELT - A process is provided for controlling the amount of insoluble gas carried by a charge of granular polycrystalline silicon. The process comprises (i) charging a feeding container with granular polycrystalline silicon, (ii) forming an ambient atmosphere in the feeding container, the ambient atmosphere having a mole fraction of at least 0.9 of a gas having a solubility in molten silicon of at least about 5—10 | 05-14-2009 |
20090092534 | PROCESSES FOR PURIFICATION OF SILICON TETRAFLUORIDE - Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts. | 04-09-2009 |
20090092530 | METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE - The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport. | 04-09-2009 |
20090022930 | SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY - A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central+ axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the central axis extending substantially from the front surface to the back surface in which crystal lattice vacancies are the predominant intrinsic point defect, the segment having a radial width of at least about 25% of the radius and containing agglomerated vacancy defects and a residual concentration of crystal lattice vacancies wherein (i) the agglomerated vacancy defects have a radius of less than about 70 nm and (ii) the residual concentration of crystal lattice vacancy intrinsic point defects is less than the threshold concentration at which uncontrolled oxygen precipitation occurs upon subjecting the wafer to an oxygen precipitation heat treatment. | 01-22-2009 |
20090004458 | Diffusion Control in Heavily Doped Substrates - This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops. | 01-01-2009 |
20090004426 | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates - This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment. | 01-01-2009 |
20080314319 | SUSCEPTOR FOR IMPROVING THROUGHPUT AND REDUCING WAFER DAMAGE - A susceptor for supporting a semiconductor wafer in a heated chamber having an interior space. The susceptor includes a body having an upper surface and a lower surface opposite the upper surface. The susceptor also has a recess extending downward from the upper surface into the body along an imaginary central axis. The recess is sized and shaped for receiving the semiconductor wafer therein. The susceptor includes a plurality of lift pin openings extending through the body from the recess to the lower surface. Each of the lift pin openings is sized for accepting lift pins to selectively lift and lower the wafer with respect to the recess. The susceptor has a central opening extending through the body along the central axis from the recess to the lower surface. | 12-25-2008 |