MAGNACHIP SEMICONDUCTOR, LTD. Patent applications |
Patent application number | Title | Published |
20160141429 | ELECTROSTATIC DISCHARGE DEVICE AND METHOD OF FABRICATING THE SAME - Provided are an electrostatic discharge (ESD) device and method of fabricating the same where the ESD device is configured to prevent electrostatic discharge which can be a cause to product failure. More particularly, the ESD device provided includes a Zener diode and a plurality of PN diodes by improving the architecture of an area wherein a Zener diode is configured compared to alternatives, to provide improved functionality when protecting against ESD events. | 05-19-2016 |
20160141415 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate electrode formed on the gate insulating layer, a P type well pick-up region formed in the P type well region, and a field relief oxide layer formed in the N type well region between the gate electrode and the drain region. | 05-19-2016 |
20160141369 | SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME - Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping. | 05-19-2016 |
20160100466 | LIGHT EMITTING DIODE DRIVING CIRCUIT AND LIGHTING APPARATUS HAVING THE SAME - A light emitting diode (LED) driving circuit includes a flicker elimination unit configured to perform a flicker removal for LED modules and a driving control unit configured to pause a procedure of the flicker removal based on an AC input voltage that is regulated through a Triode for Alternating Current (TRIAC) dimmer, so as to cause a brightness of the LED modules to be dimmed. Therefore, the LED driving circuit selectively adjusts an LED brightness level and removes LED flicker by using a TRIAC dimmer and controls the brightness level of the LED module based on a dimming level. | 04-07-2016 |
20160093707 | METHOD OF MANUFACTURING NON VOLATILE MEMORY DEVICE - A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device. | 03-31-2016 |
20160085094 | LIQUID CRYSTAL DISPLAY DEVICE WITH REPAIR FUNCTION AND REPAIR TYPE DATA FORMAT STRUCTURE - The present examples relate to a liquid crystal display device with a repair function. The present examples repair a defect of a line or a defect of a pixel, using a specialized data signal structure, wherein the data signal structure integrates channel data, which is required for channel driving of a liquid crystal display element, and repair amplifier data, which is used for repairing a defect of a line and/or a pixel. Thus, examples have a better repair function than an alternative liquid crystal display device. | 03-24-2016 |
20160081158 | CIRCUIT FOR DRIVING LIGHTING APPARATUS AND METHOD THEREOF - A circuit for driving a lighting apparatus is provided. The circuit includes a valley signal generator configured to generate a valley signal based on an input voltage, an input voltage determining unit configured to determine whether the input voltage corresponds to a direct voltage or a full-wave rectified AC voltage based on the valley signal, an AC voltage simulation unit configured to generate a virtual valley signal when the input voltage is a DC voltage, and a switching device controller configured to control a switching device used to drive an LED module based the determination and at least one of the valley signal and virtual valley signal. | 03-17-2016 |
20160081156 | CIRCUIT FOR DRIVING AC DIRECT LIGHTING APPARATUS AND METHOD THEREFOR - Disclosed is a circuit for driving an AC direct lighting apparatus, including a triac dimmer configured to control a brightness of an LED module, a charger configured to be charged during a turn-off period of the triac dimmer, a reference voltage generator configured to generate a reference voltage based on a voltage charged in the charger during a first turn-off period of the triac dimmer and a voltage charged in the charger during a second turn-off period, and a driving signal output unit configured to output a driving signal of the LED module in response to a voltage charged in a third turn-off period of the triac dimmer reaching the generated reference voltage. Accordingly, the driving circuit manages a driving time deviation of the LED module, removing a flicker phenomenon from the light produced by the module. | 03-17-2016 |
20160081154 | POWER FACTOR CORRECTION CONTROL CIRCUIT AND DRIVING METHOD THEREOF - A circuit for adjusting a frequency of an AC direct lighting apparatus is provided. The circuit may include a reference voltage generation unit configured to receive a dimming voltage having a first frequency and a first voltage range, and generate a reference voltage having a second voltage range, a sensing section determining unit configured to generate first and second section reference voltages based on the reference voltage, and determine a driving current sensing section using the first and second section reference voltages, and a driving signal generation unit configured to generate a switching device driving signal having a second frequency through the determined driving current sensing section. | 03-17-2016 |
20160079113 | OTP MEMORY CELL AND FABRICATING METHOD THEREOF - A one-time programmable (OTP) memory cell is provided, which includes: a well of a first conductivity type; a gate insulating layer formed on the well and including first and second fuse regions; a gate electrode of a second conductivity type formed on the gate insulating layer, the second conductivity type being opposite in electric charge to the first conductivity type; a junction region of the second conductivity type formed in the well and arranged to surround the first and second fuse regions; and an isolation layer formed in the well between the first fuse region and the second fuse region. | 03-17-2016 |
20160056186 | PHOTO SENSOR MODULE - The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer. | 02-25-2016 |
20160035825 | SUPER JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions. | 02-04-2016 |
20160027913 | TRENCH MOSFET AND MANUFACTURING METHOD THEREOF - This invention relates to a trench MOSFET, which can lower parasitic capacitance, thereby increasing a switching speed, and to a method of manufacturing the trench MOSFET. The trench MOSFET includes a substrate having an epi layer and a body layer sequentially formed thereon, a trench formed vertically in the central portion of the epi layer and the body layer, a first gate oxide film formed on the inner wall of the trench, a diffusion oxide film formed in the epi layer between the lower surface of the trench and the upper surface of the substrate to have a thickness greater than a thickness of the first gate oxide film and a width greater than a width of the trench, a gate formed in the trench having the first gate oxide film, a second gate oxide film formed on the gate, and a source region formed at both sides of the upper portion may be of the gate, thus reducing the generation of parasitic capacitance between the epi layer corresponding to a drain region and the gate, thereby improving a switching speed. | 01-28-2016 |
20160025665 | HUMIDITY SENSOR WITH VOID WITHIN INTERCONNECT AND METHOD OF MANUFACTURING THE SAME - A humidity sensor and a method of manufacturing the same are provided where voids are formed within interconnects configured to facilitate the operation of the device and a humidity sensing material is deposited within the voids to detect the humidity. The accuracy with respect to the measurement of the humidity sensor is improved and manufacturing costs are lowered. The humidity sensor includes a substrate, a first interlayer insulating layer disposed on the substrate, first and second metal electrodes disposed adjacent to each other on the first interlayer insulating layer, an etch stop layer covering the first interlayer insulating layer and the first and second metal electrodes, a second interlayer insulating layer disposed on the first etch stop layer, voids formed within the second interlayer insulating layer, and a humidity sensing material deposited in the voids. | 01-28-2016 |
20160020273 | SUPER JUNCTION SEMICONDUCTOR DEVICE - Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short. | 01-21-2016 |
20160018478 | VERTICAL HALL SENSOR, HALL SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME - A vertical Hall sensor, a Hall sensor module, and a method for manufacturing the same are provided. By applying a trench structure inside a substrate with respect to a ground terminal, a directional component parallel to surface of the substrate is maximized with respect to a current flow to detect the magnetic field with improved sensitivity. | 01-21-2016 |
20160004319 | APPARATUS AND METHOD FOR RECOGNIZING A MOVING DIRECTION OF GESTURE - An apparatus and method to recognize a moving direction of gesture are provided. A final moving direction of gesture is determined using the number of intersecting points based on output values from one or more sensors disposed in up, down, left, right directions and a code of an accumulated sum. Thus, a moving direction of target (hand) that moves on the sensors is recognized more accurately. The apparatus to recognize a moving direction of a gesture includes first to fourth sensor disposed at a position that is north, south, west, and east from a center; and a controller configured to identify a number of intersecting points based on output values of the first sensor, the second sensor, the third sensor and the fourth sensor and to estimate a moving direction of the gesture according to the number of the intersecting points. | 01-07-2016 |
20160003758 | CAPACITOR TYPE HUMIDITY SENSOR - A capacitor type humidity sensor consisting of a humidity sensing region or a peripheral circuit region is provided. A capacitor type humidity sensor may include a semiconductor substrate comprising a humidity sensing region and a peripheral circuit region, a sensing capacitor disposed on the humidity sensing region and the sensing capacitor comprising a humidity sensitive layer, a dielectric layer made of a material different than from the humidity sensitive layer, and a reference capacitor configured to provide a reference capacitance value, wherein the sensing capacitor and the reference capacitor are disposed on different planes from each other. A reference capacitor is disposed at an arbitrary region under a sensing capacitor among a humidity sensing region or at a peripheral circuit region. The reference capacitor is a metal-insulator-metal (MIM) capacitor or a polysilicon-insulator-polysilicon (PIP) capacitor. | 01-07-2016 |
20150371924 | HEAT RELEASING SEMICONDUCTOR CHIP PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a heat releasing semiconductor chip package includes attaching a first surface of a semiconductor chip onto an insulating film, injecting a coating liquid onto a second surface of the semiconductor chip to form a liquefied coating layer and curing the liquefied coating layer to form a heat releasing layer. The coating liquid includes a liquefied molding compound for heat releasing and fine alumina particles. Therefore, the heat releasing semiconductor chip package and method for manufacturing the semiconductor chip package form a heat releasing layer in direct contact with the semiconductor chip to maximize a heat releasing effect. | 12-24-2015 |
20150369768 | CAPACITOR TYPE HUMIDITY SENSOR - A capacitor type humidity sensor is provided, where a reference capacitor (C | 12-24-2015 |
20150348825 | SEMICONDUCTOR DEVICE WITH VOIDS WITHIN SILICON-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE - A semiconductor device with voids within a silicon-on-insulator (SOI) structure and a method of forming the semiconductor device are provided. Voids are formed within a Buried Oxide layer (BOX layer) of the silicon-on-insulator (SOI) semiconductor to enhance a performance index of an RF-SOI switch. The semiconductor device with voids within a silicon-on-insulator (SOI) structure includes a semiconductor substrate; an insulating layer disposed on the substrate; a silicon-on-insulator (SOI) layer disposed on the insulating layer; a device isolation layer and an active area disposed within the SOI layer; one or more voids disposed within the insulating layer; and a sealing insulating sealing an opening of the void. | 12-03-2015 |
20150325653 | POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer. | 11-12-2015 |
20150318343 | INSULATOR, CAPACITOR WITH THE SAME AND FABRICATION METHOD THEREOF, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al | 11-05-2015 |
20150316394 | SENSING APPARATUS USING GROUPS OF HALL SENSORS AND APPARATUS USING THE SENSING APPARATUS - Provided are a sensing apparatus using a plurality of Hall sensors and an apparatus using the sensing apparatus. The sensing apparatus is configured to measure an intensity of a magnetic field with respect to a magnetic element by using a plurality of Hall sensors and to identify a body that includes the magnetic element. | 11-05-2015 |
20150311299 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate insulating layer and a floating gate disposed on a substrate, a dielectric layer formed perpendicular to the floating gate insulating layer and at two sides of the floating gate, and a first control gate at a first side of the dielectric layer distal from the floating gate and a second control gate at a second side of the dielectric layer distal from the floating gate, wherein the first control gate and the second control gate are connected to each other, and a second width of the second control gate is wider than a first width of the first control gate. A length of a control gate of a non-volatile memory device may be extended to effectively preventing the generation of leakage current when a control gate is off. | 10-29-2015 |
20150303253 | ISOLATION STRUCTURE, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE ISOLATION STRUCTURE - An isolation structure of a semiconductor, a semiconductor device having the same, and a method for fabricating the isolation structure are provided. An isolation structure of a semiconductor device may include a trench formed in a substrate, an oxide layer formed on a bottom surface and an inner sidewall of the trench, a filler formed on the oxide layer to fill a part of inside of the trench, and a fourth oxide layer filling an upper portion of the filler of the trench to a height above an upper surface of the trench, an undercut structure being formed on a boundary area between the inner sidewall and the oxide layer. | 10-22-2015 |
20150303252 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a multi-depth trench is formed, the multi-depth trench including a shallow trench and a deep trench arranged below the shallow trench, a first dielectric material formed in partial area of the multi-depth trench, the first dielectric material including a slope in the shallow trench that extends upward from a corner where a bottom plane of the shallow trench and a sidewall of the deep trench meets, the slope being inclined with respect to the bottom plane of the shallow trench, and a second dielectric material formed in areas of the multi-depth trench in which the first dielectric material is absent. | 10-22-2015 |
20150295493 | CHARGE PUMP APPARATUS AND CHARGE PUMPING METHOD - A charge pumping method includes: generating a first boosted voltage by boosting an input voltage by a boosting mode of a first multiplier; changing the level of a voltage charged in at least one capacitor provided in the inside of a charge pump circuit, in preparation for a change in the boosting mode; and generating a second boosted voltage by boosting the input voltage by a boosting mode of a second multiplier. | 10-15-2015 |
20150293545 | SWITCH CONTROL CIRCUIT AND CONVERTER USING THE SAME - A switch control circuit for controlling an average current flowing into a load through a current control switch that is series-coupled to an input power and the load includes a sensing unit configured to measure a current flowing into the load, a folder unit configured to fold a sensing signal related to the measured current based on a first reference voltage to generate first and second folder output signals based on an initialization voltage, the first and second folder output signals being symmetric to each other, a comparison unit configured to compare the generated first and second folder output signals and a control unit configured to control an operation of the current control switch according to a comparison result in the comparison unit. Such a switch control circuit integrates and compares a sensing signal and a reference signal to effectively perform an average current control. | 10-15-2015 |
20150279939 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body to region and filled with a conductive material. | 10-01-2015 |
20150268690 | CIRCUIT FOR COMPENSATING BIPOLAR JUNCTION TRANSISTOR BASE CURRENT AND LED DRIVING APPARATUS HAVING THE SAME - Disclosed is a circuit for compensating a bipolar junction transistor (BJT) base current that mirrors the BJT base current to induce a mirror current that is coupled to an emitter of the BJT to decrease an emitter current by a size of the mirror current. Also disclosed is a light-emitting diode (LED) driving apparatus including an LED array, a BJT series-coupled to the LED array, a measuring unit coupled to an emitter of the BJT to measure a current flowing into the LED array, a differential amplifier configured to differentially amplify a reference voltage and the measured current to supply a base current to a base of the BJT, and a BJT base current compensation circuit as disclosed to accurately control an LED current. | 09-24-2015 |
20150263084 | SEMICONDUCTOR DEVICE WITH TRENCH TERMINATION STRUCTURE - The present disclosure relates to a semiconductor device in which a trench termination structure is applied. There is disclosed a semiconductor device of which structure is partially improved so that a P body area is not formed in an adjacent area of a gate pad. The semiconductor device includes a gate pad formed on a substrate, an active area formed in the substrate and comprising trenches, an isolation area to isolates the gate pad and the active area, and a section of the active area adjacent to the gate pad where a P-body is not formed. According to such the semiconductor device, it is possible to minimize a drain-source leakage current and to stably secure a drain-source breakdown voltage. | 09-17-2015 |
20150256068 | SWITCH CONTROL CIRCUIT, SWITCH CONTROL METHOD AND CONVERTER USING THE SAME - Provided is a switch control circuit for controlling a current control switch of a power supply, the power supply including a load, an inductor and the current control switch that are series-coupled to an input power. The switch control circuit includes a current measuring unit configured to measure a current flowing into the load, a current integral unit configured to integrate the measured current, a comparison unit configured to compare the integrated current value and a reference value and a control unit coupled to the current control switch, the control unit being configured to turn off the current control switch when the integrated current is substantially the same as the reference value and turn on the current control switch when a predefined off-time elapses from a time when the current control switch is turned off. The switch control circuit may quickly and accurately control an average current. | 09-10-2015 |
20150255709 | SEMICONDUCTOR DEVICE HAVING A BURIED MAGNETIC SENSOR - Provided is a magnetic field sensing device (or Hall device) including a magnetic sensor (or Hall sensor) that is provided in buried form inside of a semiconductor substrate. A top portion of the magnetic field sensing device is connected to analog and digital circuitry, and the magnetic sensor included in the magnetic field sensing device obtains magnetic data that is provided to the circuitry. Accordingly, a magnetic field sensor having a reduced size is produced. | 09-10-2015 |
20150255595 | LOW-COST SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, forming multiple gate insulating layers and multiple gate electrodes in the body region; implementing a blanket ion implantation in an entire surface of the substrate to form a low concentration doping region (LDD region) in the body region without a mask, forming a spacer at a side wall of the gate electrode, and implementing a high concentration ion implantation to form a high concentration source region and a high concentration drain region around the LDD region. According to the examples, devices have favorable electrical characteristics and at the same time, manufacturing costs are reduced. Since, when forming high concentration source region and drain regions, tilt and rotation co-implants are applied, an LDD masking step is potentially omitted. | 09-10-2015 |
20150244389 | INTEGRATING ANALOG-DIGITAL CONVERTER - Provided is an integrating analog-digital converter. According to the present examples, the resistance against external noise is improved by incorporating a differential amplifier into an integrating analog-digital converter. Some examples also include a section where an input voltage and a reference voltage are simultaneously blocked such that switching noise may be minimized and a reference voltage may also be stably supplied. Further, examples are designed to manage a residue, which may be generated when an integral operation to an analog input value is finished, to be processed not in an additional converter but in control logic itself, thereby reducing a size of a circuit device. | 08-27-2015 |
20150243770 | VERTICAL BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a vertical bipolar junction transistor. A vertical bipolar junction transistor includes a high concentration doping region emitter terminal disposed on a semiconductor substrate; a high concentration doping region collector terminal disposed on a semiconductor substrate; a high concentration doping region base terminal disposed between the emitter terminal and the collector terminal; a drift region having a first doping concentration surrounding the emitter terminal and being deeper than either the base terminal or the collector terminal; a base layer disposed below the drift region; a collector layer in contact with the base layer, the collector layer having a second doping concentration higher than the first doping concentration. The manufacturing cost of the vertical bipolar junction transistor can be lowered and a current gain can be elevated using a low-cost BCD process. | 08-27-2015 |
20150235868 | METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE - A method for manufacturing a non-volatile memory includes depositing a first conductive film and a protective film on a substrate including a logic area and a cell area, patterning the protective film, depositing a hard mask layer on the first conductive film and the patterned protective film to pattern the hard mask layer, using the patterned hard mask layer to form a logic gate on the logic area, exposing a surface of the first conductive film in the cell area and forming a control gate on the cell area. | 08-20-2015 |
20150228742 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device and a method of manufacturing the semiconductor device includes forming a first and a second gate electrode on a semiconductor substrate, forming a first and a second insulator on the first and second gate electrodes, forming a third insulator on the second insulator, a first thickness of the third insulator on the first gate electrode being different than a second thickness of the third insulator on the second gate electrode, and etching-back the first, second and third insulators to form a first spacer beside the first gate electrode and a second spacer beside the second gate electrode. Herein, a horizontal length of the first spacer being contacted with a surface of the semiconductor substrate is different from a horizontal length of the second spacer being contacted with a surface of the semiconductor substrate. | 08-13-2015 |
20150159989 | SENSING APPARATUS USING A PLURALITY OF HALL SENSORS - A sensing apparatus and sensing device using the sensing apparatus are capable of identifying a relative position of a body which includes a magnetic module by using sensing data of a sensor unit which may be arranged in a 3 dimensional structure. | 06-11-2015 |
20150129959 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a substrate comprising a WELL region, a gate electrode comprising a gate length disposed on the WELL region, and first and second drift regions which overlap with the gate electrode. The first and second draft regions may overlap with the gate electrode at an overlapping length which is a percentage of the gate length. | 05-14-2015 |
20150123235 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD. | 05-07-2015 |
20150115943 | APPARATUS USING HALL SENSOR - An apparatus and a method of determining a status of a cover of a display terminal are provided. The apparatus includes a terminal comprising a display screen, and a Hall sensor comprising a magnetic field sensing surface and a plurality of Hall elements disposed substantially parallel with the magnetic field sensing surface, the magnetic field sensing surface being substantially perpendicular to the display screen. | 04-30-2015 |
20150115357 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device. The semiconductor device includes a plurality of trench transistors in an active region, and an interconnection disposed in an edge region, the interconnection configured to transfer a voltage to the plurality of trench transistors, in which the edge region comprises a substrate, a first insulating layer, a first electrode, a second insulating layer, and a second electrode, disposed in that order. | 04-30-2015 |
20150115352 | SEMICONDUCTOR DEVICE - The present disclosure relates to a semiconductor device. Such a semiconductor device includes a trench metal-oxide-semiconductor (MOS) transistor having two or more electrodes in a trench formed on a substrate of the semiconductor, where a part of a shield electrode positioned at a bottom of the trench is formed to have a large thickness, and a groove is formed in a gate electrode that is stacked on the shield electrode, such that a part of the shield electrode protrudes to a surface of the semiconductor device so as to be connected with a source power. | 04-30-2015 |
20150115137 | GESTURE CELL AND GESTURE SENSOR - A gesture cell including a photodiode comprising a first layer, the first layer formed as a serpentine element on a substrate, and an optical blind configured to guide a light that is incident from a first direction on the photodiode, the optical blind being placed on the photodiode obliquely toward the first direction, wherein the serpentine element is continuously formed from multiple limbs positioned in the first directions and returning in a corresponding second direction, and each limb positioned in the first direction and the corresponding limb returning in the second direction are equally spaced apart. | 04-30-2015 |
20150109047 | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) INVERTER CIRCUIT DEVICE - There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller. | 04-23-2015 |
20150108954 | DC-DC CONVERTER - A DC-DC converter having a coupling network is provided, in which the coupling network is so configured as to forcibly add a noise source to a feedback output voltage of the DC-DC converter. The coupling network includes one coupling resistor and two coupling capacitors to include the switching voltage of a power switch and inductor output voltage into the output voltage, and transmit the result together with the feedback output voltage to the comparator. Accordingly, it is easier to compare the reference voltage and the feedback voltage, and stably maintain the output voltage of the DC-DC converter operating in constant on-time (COT). | 04-23-2015 |
20150102405 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode. | 04-16-2015 |
20150097558 | COVER OPENING DETECTION WITH HALL SENSOR - A display terminal, an apparatus for cover opening detection, and a method of arranging a Hall sensor in a display terminal are provided. A display terminal includes a first body, and a Hall sensor disposed in the first body, the Hall sensor including a magnetic field sensing surface configured to sense a magnetic field, in which the magnetic field sensing surface is disposed at a slope with respect to an front surface of the first body. | 04-09-2015 |
20150090866 | OPTICAL SENSOR SENSING ILLUMINANCE AND PROXIMITY - An optical sensor includes photodiodes and optical filters that are arranged on the photodiodes. The photodiodes and optical filters may be spaced apart from each other. The optical filters include an infrared blocking filter and at least one visible light filter and the optical sensor measures a light quantity of a specific wavelength band in a visible light band through the photodiodes, wherein a specific visible light filter is arranged on the photodiodes. Therefore, the optical sensor has a simplified structure and may function as an ambient illuminance sensor, a proximity sensor, and a color sensor. | 04-02-2015 |
20150084943 | LIGHT EMITTING DIODE DRIVING CIRCUIT AND LIGHT APPARATUS HAVING THE SAME - A light emitting diode (LED) driving circuit that sequentially drive a plurality of series-coupled LED groups comprising at least one LED is provided. The LED driving circuit includes a plurality of mid nodes coupled to terminals of the plurality of the LED groups, a common node with a reference voltage, a switch unit configured to form a plurality of current movement paths between the common node and the plurality of the mid nodes and configured to select a current movement path based on a control signal, a current measuring unit configured to detect a current flow through the common node, and a current control unit configured to generate the control signal based on the detected current flow. | 03-26-2015 |
20150076600 | SUPER JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions. | 03-19-2015 |
20150076599 | SUPER JUNCTION SEMICONDUCTOR DEVICE - There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area. | 03-19-2015 |
20150070963 | MEMORY PROGRAMMING METHOD AND APPARATUS - The memory programming apparatus includes a memory reader configured to read a read data in a plurality of cells related with an address of a programmable memory; and a memory writer configured to record a write data on the plurality of cells to compare the write data with the read data, to generate a re-writing pattern, and to correct at least one mismatch cell among the plurality of cells. Accordingly, it may be possible to reduce a programming processing time and to increase a yield rate. | 03-12-2015 |
20150069536 | SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor element and a method for producing the same are provided. A semiconductor element includes an active region comprising trenches, a termination region outside the active region, a transient region disposed between the active region and the termination region, the transient region including an inside trench, in which a center poly electrode is disposed inside at least one of the trenches of the active region, at least two gate poly electrodes are disposed adjacent to an upper portion of the center poly electrode, a p-body region is disposed between upper portions of the trenches, and a source region is disposed at a side of the gate poly electrodes. | 03-12-2015 |
20150068302 | CAPACITIVE HUMIDITY SENSOR - Provided is a capacitive humidity sensor. The capacitive humidity sensor includes an upper electrode disposed on a first plane, a plurality of first electrodes included in the upper electrode, a plurality of second electrodes disposed between the first electrodes, and a humidity sensitive layer surrounding the second electrodes. | 03-12-2015 |
20150066423 | DISPLAY TERMINAL WITH FLIP COVER - A display terminal includes a first body having a Hall sensor and a second body having a magnetic element. The area of the magnetic element may correspond to a maximum horizontal moving distance and a maximum vertical moving distance of the second body. | 03-05-2015 |
20150061648 | METHOD OF SENSING SLIDING BY HALL SENSOR AND SENSING SYSTEM USING THE SAME - A method of sensing a sliding by a sensor including grouping one or more Hall elements into one or more groups, measuring magnetic field strength generated by a magnetic field source, and comparing the magnetic field strength at the one or more Hall elements to determine whether a horizontal sliding occurs. | 03-05-2015 |
20150061609 | REFERENCE SIGNAL GENERATING CIRCUIT AND METHOD AND POWER FACTOR COMPENSATION APPARATUS HAVING THE SAME - A reference signal generating circuit is provided that generates a reference signal corresponding to an input signal for power factor compensation of a power converter. The reference signal generating circuit includes a detector sampling the input signal according to a reference clock to detect and hold the maximum input signal and a phase measuring unit measuring a phase of the sampled input signal based on the sampled input signal and the detected maximum input signal. The circuit also includes a reference signal generating unit configured to generate a reference signal having a specific value in response to the measured phase. | 03-05-2015 |
20150057050 | METHOD OF SENSING FLIP COVER - Provided is a method and devices for sensing a flip cover including determining an angle of the flip cover. A Hall sensor may be included in a mobile terminal (or display terminal) and may include at least one Hall element for collecting a magnetic field intensity generated from a magnet of the flip cover. | 02-26-2015 |
20150054482 | CURRENT CONTROLLING MODE DIRECT CURRENT (DC)-DC CONVERTER - There is provided a current controlling mode DC-DC converter that operates in a PWM mode or a PFM mode by adjusting a turned-on time of a gate depending on power consumption of a load. The DC-DC converter includes a first comparator that receives a first input voltage and a second input voltage and outputs a first output signal, a second comparator that receives a reference voltage for mode switching and the second input voltage and outputs a second output signal, and a first logic element that outputs a reset signal for turning off a gate at a point of time when both the first output signal and the second output signal are applied. Examples may also include additional elements to facilitate mode switching. | 02-26-2015 |
20150042318 | MAGNETIC SENSOR TEST APPARATUS AND METHOD - Provided are a magnetic sensor test apparatus and a magnetic sensor test method. The magnetic sensor test apparatus includes a vertical coil configured to generate a magnetic field and at least one periphery coil. The magnetic sensor test apparatus and method may test a magnetic sensor on a semiconductor wafer. | 02-12-2015 |
20150041894 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET. | 02-12-2015 |
20150041892 | SEMICONDUCTOR DEVICE - There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain region, a first body region surrounding the source region, a deep well region disposed below the drain region, and a second body region disposed below the first body region. A bottom surface of the second body region is not coplanar with a bottom surface of the deep well region, and the first body region has a different conductivity type from the second body region. | 02-12-2015 |
20150032409 | METHOD AND APPARATUS FOR CALCULATING AZIMUTH - A method and an apparatus for calculating azimuth, and a method and an apparatus for determining an offset from geomagnetic field are provided. An apparatus for calculating azimuth includes a magnetic sensor configured to sense magnetic field, a data selecting unit configured to select offset data items, an offset calculating unit configured to calculate an offset by a geometrical method that uses the selected offset data items, and an azimuth calculating unit configured to calculate an azimuth by using the calculated offset. | 01-29-2015 |
20150028855 | APPARATUS FOR TESTING MAGNETIC FIELD SENSOR ON WAFER AND METHOD THEREOF - An apparatus and a method for testing a magnetic field sensor are provided, in which the method includes arranging a coil for generating a magnetic field, applying the magnetic field to the magnetic field sensor using the coil, and detecting the magnetic field applied to the magnetic field sensor. | 01-29-2015 |
20150008978 | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) ANALOG SWITCH CIRCUIT - A Complementary Metal-Oxide-Semiconductor (CMOS) analog switch has a circuit structure such that when a supply voltage is applied, the CMOS analog switch biases voltages at both ends of a Metal-Oxide-Semiconductor Field Effect Transistor (MOS) device, which switches on upon application of supply voltage, to a substrate node of MOS, or biases the substrate voltage of MOS device to a ground voltage state during a switching-off operation. The substrate voltage of MOS device in floating state is still biased to the ground voltage state even when abnormal, high voltages are applied to both ends of the MOS device. As a result, threshold voltage and conduction resistance decrease compared to related analog switches, and frequency bandwidth increases. | 01-08-2015 |
20140375373 | MULTI POWER SUPPLY TYPE LEVEL SHIFTER - There is provided a multi power supply type level shifter. The provided multi power supply type level shifter includes a first level shifter and a second level shifter in a two-stage architecture so as to selectively receive first to third power supplies and change a signal level, even when the first to third power supplies are applied in a different sequence from a normal power-on sequence. Output voltages are output without a change in level, and short-circuit currents are not generated in the first and second level shifters. | 12-25-2014 |
20140367783 | ESD TRANSISTOR AND ESD PROTECT CIRCUIT THEREOF - An ESD transistor and an ESD protection circuit thereof are provided. An ESD transistor includes a collector region disposed on a surface of a substrate, a sink region disposed vertically below the collector region, and a burier layer protruding horizontally further than the sink region under the sink region. | 12-18-2014 |
20140367776 | SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD THEREOF - A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a well region disposed in a substrate, a gate disposed on the substrate, a halo region disposed in a channel region under the gate, and a source LDD region and a drain LDD region disposed on opposite sides of the halo region. | 12-18-2014 |
20140353799 | ESD TRANSISTOR - An ESD transistor is provided. The ESD transistor includes a collector region on a substrate, a base contact region on the substrate, an emitter region spaced apart from the base contact region, a sink region disposed vertically below the collector region, and a buried layer disposed horizontally under the sink region. | 12-04-2014 |
20140353749 | SEMICONDUCTOR POWER DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor power device and a method of fabricating the same are provided. The semiconductor power device involving: a first conductivity type semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a second conductivity type well formed in the semiconductor substrate and the epitaxial layer; a drain region formed in the well; an oxide layer that insulates a gate region from the drain region; a first conductivity type buried layer formed in the well; a second conductivity type drift region surrounding the buried layer; and a second conductivity type TOP region formed between the buried layer and the oxide layer. | 12-04-2014 |
20140349470 | SCHOTTKY DIODE AND METHOD FOR FABRICATING THE SAME - A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the isolation layer and located at a left side of the isolation layer, a second conductive type well formed in the deep well along the outer sidewall of the isolation layer and located at a right side of the isolation layer, an anode electrode formed over the substrate and coupled to the deep well and the guard ring, and a cathode electrode formed over the substrate and coupled to the well. A part of the guard ring overlaps the isolation layer. | 11-27-2014 |
20140347107 | DELAY-LOCKED LOOP (DLL) CIRCUIT APPARATUS AND METHOD FOR LOCKING THEREOF - A DLL circuit apparatus and a DLL locking method are provided. A control signal voltage value corresponding to a DLL locking state is stored, and a DLL unlocking state is detected when a change in control signal voltage value or a phase difference of clock signals occurs. When the DLL unlocking occurs, the DLL is locked again using the stored control signal voltage value. Accordingly, DLL unlocking from DLL locking state is quickly detected, and a fast DLL locking time occurs. | 11-27-2014 |
20140347106 | DELAY-LOCKED LOOP (DLL) OPERATION MODE CONTROLLER CIRCUIT AND METHOD FOR CONTROLLING THEREOF - A delay-locked loop (DLL) operation mode control circuit and corresponding method are provided in which one of the output values from a display driver IC (DDI) is detected to switch a DLL block to standby mode. In examples, a CLKP/N frequency and CLKP/N common terminal voltage status are used to switch mode. Accordingly, since inoperable frequency domains otherwise present in a normal mode interval of the DLL block is included into standby mode, more stable operation of the DLL circuit is provided. | 11-27-2014 |
20140347030 | RAMP CIRCUIT AND DIRECT CURRENT (DC)- DC CONVERTER THEREOF - Provided are a ramp circuit and a DC-DC converter. The ramp circuit generates a current flowing in a resistor using voltages affected by an output voltage and an input voltage of a DC-DC converter, and generates a ramp signal through copying of the current and charging and discharging of a capacitor using a current mirror unit. The ramp signal is generated by considering the input voltage and the output voltage, and thus the ramp signal has an optimal slope to provide an adaptive response to state change in the input voltage and the output voltage. The DC-DC converter uses such a ramp circuit to facilitate its operation. | 11-27-2014 |
20140346594 | SEMICONDUCTOR DEVICE WITH SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF - A semiconductor device with an embedded schottky diode and a manufacturing method thereof are provided. A semiconductor device having a schottky diode include: an epilayer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order; a gate trench that extends from the source layer to a part of the epilayer; a body trench formed a predetermined distance from the gate trench and extends from the source layer to a part of the epilayer; and a guard ring of the second conductivity type that contacts an outer wall of the body trench and formed in the epilayer. | 11-27-2014 |
20140313114 | COLUMN DRIVER OF DISPLAY DEVICE - A column driver of a display device provides a high slew rate with lowered power requirements by using external switches connected to upper and bottom output buffers. The upper output buffer is driven between a first voltage rail and a second voltage rail, and outputs a first output signal in response to a first input signal and a second input signal. The bottom output buffer is driven between the second voltage rail and a third voltage rail, and outputs a second output signal in response to a third input signal and a fourth input signal. A first switch group selectively provides input for the upper output buffer and the bottom output buffer. A second switch group feeds back the first and the second output signals to the first or the second input terminal of each of the upper output buffer and the bottom output buffer. | 10-23-2014 |
20140312949 | APPARATUS FOR OUTPUT BUFFERING HAVING HALF-SWING RAIL-TO-RAIL STRUCTURE - There is provided an apparatus for output buffering having a half-swing rail-to-rail structure. The apparatus provides output buffering by using a switch structure in order to attain a high slew rate and low power characteristics, thereby reducing current consumption. The provided apparatus for output buffering having a half-swing rail-to-rail structure includes a first output buffer, driven between a first voltage rail and a second voltage rail and outputting a first output signal in response to a first input signal and a second input signal, and a second output buffer, driven between the first and the second voltage rails and a third voltage rail and outputting a second output signal in response to a third input signal and a fourth input signal. | 10-23-2014 |
20140306285 | SEMICONDUCTOR POWER DEVICE - Provided is a semiconductor power device. The semiconductor power device includes a well disposed in a substrate, a gate overlapping the well, a source region disposed at one side of the gate, a buried layer disposed in the well, and a drain region or a drift region contacting the buried layer. | 10-16-2014 |
20140306270 | MULTI-SOURCE JFET DEVICE - A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals. | 10-16-2014 |
20140291767 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film. | 10-02-2014 |
20140285481 | MULTI-FUNCTIONAL INTEGRATED CIRCUIT AND SOURCE DRIVER HAVING THE SAME - Disclosed are a multi-functional integrated circuit and a source driver having the same. The integrated circuit (IC) chip includes: a first high-voltage transistor configured to precharge a storage node in response to a first control signal; a decoding unit configured to decode a plurality of input signals to output the decoded signal to the storage node; and a second high-voltage transistor configured to transfer an output of the decoding unit to the storage node in response to a second control signal. | 09-25-2014 |
20140252514 | MAGNETIC SENSOR AND METHOD OF FABRICATING THE SAME - Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface. | 09-11-2014 |
20140252462 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the upper trench part; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material. | 09-11-2014 |
20140252461 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material. | 09-11-2014 |
20140231927 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A high voltage/power semiconductor device using a low voltage logic well is provided. The semiconductor device includes a substrate, a first well region formed by being doped in a first location on a surface of the substrate, a second well region formed by being doped with impurity different from the first well region's in a second location on a surface of the substrate, an overlapping region between the first well region and the second well region where the first well region and the second well region substantially coexist, a gate insulating layer formed on the surface of the first and the second well regions and the surface of the overlapping region, a gate electrode formed on the gate insulating layer, a source region formed on an upper portion of the first well region, and a drain region formed on an upper portion of the second well region. The semiconductor device may also include a separating unit, which is formed in the second well region on the drain side and may be formed as a shallow trench isolation (STI) region having a lower depth than the second well region. | 08-21-2014 |
20140159217 | MULTICHIP PACKAGE AND FABRICATION METHOD THEREOF - A multichip package and a method for manufacturing the same are provided. A multichip package includes: a plurality of semiconductor chips each mounted on corresponding lead frame pads; lead frames connected to the semiconductor chips by a bonding wire; and fixed frames integrally formed with at least one of the lead frame pads and configured to support the lead frame pads on a package-forming substrate. | 06-12-2014 |
20140131889 | FLEXIBLE PRINTED CIRCUIT BOARD FOR PACKAGING SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A flexible circuit board, a semiconductor package, and methods of forming the same are provided. The flexible circuit board includes: a base film; an input line pattern, an output line pattern, and a dummy pattern on a first surface of the base film; and a ground pattern on a second surface of the base film and electrically connected with the dummy pattern. | 05-15-2014 |
20140106481 | METHOD FOR WAFER LEVEL RELIABILITY - A method for ensuring wafer level reliability is provided. The method involves: forming a gate oxide layer having a thickness of less than 50 Å on a semiconductor substrate; forming a PMOS element having a channel length of less than 0.13 μm on the semiconductor substrate; and assessing hot carrier injection (HCI) for the PMOS element. | 04-17-2014 |
20140054690 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device and a fabricating method thereof are provided, in which the semiconductor device includes a semiconductor substrate with a trench formed therein, a bottom electrode placed at a lower inner portion of the trench, the bottom electrode having an uneven upper surface, an insulating layer formed on an upper portion of the bottom electrode and on a sidewall of the trench, and a top electrode placed at an upper portion of the bottom electrode inside the trench, the top electrode having a top electrode which is uneven, in which the top electrode is so configured that the top electrode is inclined toward a center portion. | 02-27-2014 |
20140035801 | MEMORY DEVICE WITH ONE-TIME PROGRAMMABLE FUNCTION, AND DISPLAY DRIVER IC AND DISPLAY DEVICE WITH THE SAME - A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit. | 02-06-2014 |
20140035033 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate electrode formed on the gate insulating layer, a P type well pick-up region formed in the P type well region, and a field relief oxide layer formed in the N type well region between the gate electrode and the drain region. | 02-06-2014 |
20140030862 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region. | 01-30-2014 |
20140027846 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode. | 01-30-2014 |
20140021542 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 01-23-2014 |
20140021541 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 01-23-2014 |
20130334596 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a substrate comprising a trench; a first electrode disposed below the trench; a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged in a first direction of the substrate and connected to the first electrode; and a second contact arranged in second direction that is different from the first direction, the second contact being connected to the second electrode. | 12-19-2013 |
20130293133 | LIGHT EMITTING DIODE DRIVER APPARATUS - A light emitting diode (LED) driver apparatus includes a pulse-width modulation (PWM) signal generator configured to generate a PWM signal according to a reference voltage. The LED driver apparatus also includes a DC-DC converter configured to provide a driving voltage to LED arrays based on the generated PWM signal, and a LED driver configured to drive the LED arrays through output ports. The LED apparatus includes a detector configured to detect whether the LED arrays are operatively connected to the corresponding output ports. | 11-07-2013 |
20130285702 | BUFFERING CIRCUIT, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS THEREOF - A multipoint low-voltage differential signaling (mLVDS)receiver of a semiconductor device and a buffering circuit of a semiconductor device, includes: an even-number data buffering unit configured to: sample even-number data from input data, amplify and output the even-number data in a section in which a positive clock is activated, and latch the even-number data in a section in which the positive clock is inactivated, and an odd-number data buffering unit configured to: sample odd-number data from the input data, amplify and output the odd-number data in a section in which a negative clock is activated, and latch the odd-number data in a section in which the negative clock is inactivated. | 10-31-2013 |
20130237027 | HIGH VOLTAGE DEVICE AND METHOD FOR FABRICATING THE SAME - A high voltage device includes drift regions formed in a substrate, an isolation layer formed in the substrate to isolate neighboring drift regions, wherein the isolation layer has a depth greater than that of the drift region, a gate electrode formed over the substrate, and source and drain regions formed in the drift regions on both sides of the gate electrode. | 09-12-2013 |
20130201773 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes an operation control unit, a reference voltage generating unit, and a sensing unit. The operation control unit is configured to select a unit cell from unit cells to perform reading and writing operations. The reference voltage generating unit is configured to voltage-divide a read voltage using series-connected resistors and generate a reference voltage based on the voltage-divided read voltage. The sensing unit is configured to compare a size of a voltage through an e-fuse of the selected unit cell based on the read voltage with the reference voltage, and sense data of the e-fuse of the selected unit cell. The nonvolatile memory device also includes a read current supply unit configured to output the read voltage to the unit cells during a reading operation of the nonvolatile memory device. | 08-08-2013 |
20130169160 | LED DRIVER CIRCUIT AND LIGHT APPARATUS HAVING THE SAME IN - A light-emitting diode (LED) driver circuit and a light apparatus including the LED driver circuit are provided. The light apparatus includes an LED array, an input unit, a rectifier, and a control circuit. The LED array includes LED devices connected to one another in series. The input unit receives an alternating current (AC) power source. The rectifier circuit full-wave rectifies the received AC power source signal and supplies the full-wave rectified AC power source signal to the LED array. The control circuit selectively lights the LED devices according to a voltage level of the full-wave rectified AC power source signal. The control circuit includes switching elements and comparators. The switching elements selectively force nodes between the LED devices to be grounded. The comparators turn-on one of the switching elements according to the voltage level of the full-wave rectified AC power source signal. | 07-04-2013 |
20130099301 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THEREOF - A nonvolatile memory device and a method of manufacturing thereof are provided. The method includes forming a floating gate on a substrate, forming a dielectric layer to conform to a shape of the floating gate, forming a conductive layer to form a control gate on the substrate, the control gate covering the floating gate and the dielectric layer, forming a photoresist pattern on one side of the conductive layer, forming the control gate in the form of a spacer to surround sides of the floating gate, the forming of the control gate including performing an etch-back on the conductive layer until a portion of the dielectric layer on the floating gate is exposed, and forming a poly pad, to which a plurality of contact plugs are connected, on one side of the control gate, the forming of the poly pad including removing the photoresist pattern. | 04-25-2013 |
20130050289 | LED DRIVER APPARATUS - A Light Emitting Diode (LED) driver apparatus and a method of driving an LED array are provided. A Light Emitting Diode (LED) driver apparatus includes: a DC-DC converter configured to supply a driving voltage to an LED array, a plurality of LED drivers configured to drive the LED array according to a dimming signal, in which the plurality of LED drivers are connected to one another in parallel to supply currents to the LED array. | 02-28-2013 |
20130049614 | LED DRIVER APPARATUS - A Light Emitting Diode (LED) driver apparatus is provided. The LED driver apparatus includes: a Pulse Width Modulation (PWM) signal generator configured to generate a PWM signal, a DC-DC converter configured to provide a driving voltage of a plurality of LED arrays by using the generated PWM signal, and a sensor configured to determine whether at least one LED array among the plurality of LED arrays is in an open state in response to the driving voltage being higher than or equal to a preset first reference voltage, and the preset first reference voltage is higher than the driving voltage applied when the plurality of LED arrays are each in a working state. | 02-28-2013 |
20130001686 | ELECTRO-STATIC DISCHARGE PROTECTION DEVICE - An Electro-Static Discharge (ESD) protection device is provided. The ESD protection device includes a metal-oxide semiconductor (MOS) transistor, including a source area having a surface on which a first silicide is formed, the source area including a source connecting area including a first connecting portion formed on the first silicide, and a source extension area, a gate arranged in parallel with the source area, and a drain area arranged in parallel with the source area and the gate, the drain area having a surface on which a second silicide is formed, the drain area including a drain connecting area formed opposite the source extension area, the drain connecting area including second connection portion formed on the second silicide, and a drain extension area formed opposite the source connecting area. | 01-03-2013 |
20120313536 | LED DRIVER CIRCUIT HAVING A SENSING UNIT - A LED driving circuit having a sensing unit is disclosed. The LED driving circuit includes an input unit configured to receive a dimming signal to drive an LED array, a DC-DC converter including a power transistor configured to perform a switching operation, the DC-DC converter being configured to provide an output voltage to the LED array by the switching operation, a PWM signal generating unit configured to provide a PWM signal to adjust power of the LED array to the power transistor, a LED driving unit configured to drive the LED array using the dimming signal, and a sensing unit configured to sense degradation of the power transistor. | 12-13-2012 |
20120273928 | CHIP ON FILM TYPE SEMICONDUCTOR PACKAGE - A chip on film (COF) type semiconductor package is provided. The chip on film (COF) type semiconductor package includes a film, a plurality of leads formed on a surface of the film, a chip adhered to ends of the leads, an underfill layer filled within a space between the chip and the leads, and a heat dissipation layer adhered to an other surface of the film, the heat dissipation layer including a graphite material layer, a protection layer formed on a surface of the graphite material layer to cover the graphite material layer, and an adhesion layer formed on an other surface of the graphite material layer to adhere the heat dissipation layer to the other surface of the film. | 11-01-2012 |
20120212281 | LEVEL SHIFTER - A level shifter is provided. The level shifter includes a signal converter connected to an external power source and a ground, first and second output terminals connected to the signal converter, the first and second output terminals being configured to output a bias voltage applied from the external power source, and a switching unit configured to switch a connection state of the signal converter according to an input signal to adjust output voltage values of the first and second output terminals, the switching unit including first and second transistors, the first transistor being of a type that is different from a type of the second transistor, the first and second transistors being connected to each other in series between an input terminal, to which an input signal is applied, and the external power source, gates of the first and second transistors being commonly connected to the second output terminal. | 08-23-2012 |
20120212263 | WAVEFORM GENERATION CIRCUIT - Waveform generation circuits are provided. A waveform generation circuit includes a waveform generation block configured to generate a waveform signal corresponding to a driving control signal, and a control signal generation block configured to generate the driving control signal to compensate the waveform signal for an environmental factor affecting the waveform generation circuit. | 08-23-2012 |
20120212142 | PWM CONTROLLING CIRCUIT AND LED DRIVER CIRCUIT HAVING THE SAME - A Pulse Width Modulation (PWM) controlling circuit and a Light Emitting Diode (LED) driver circuit having the same are provided. An LED driver circuit includes a voltage detector connected to a plurality of LED arrays, the voltage detector being configured to determine a connection status of each of the LED arrays according to a corresponding level of the feedback voltage, and detect a minimum feedback voltage from feedback voltages of the LED arrays that are determined to be connected, a controller configured to output a control signal to one of abort and control boosting of the LED arrays according to the detected minimum feedback voltage, and a Pulse Width Modulation (PWM) signal generator configured to output a PWM signal corresponding to the outputted control signal according to an on/off state of a dimming signal that drives the LED arrays that are determined to be connected. | 08-23-2012 |
20120212141 | PWM CONTROLLING CIRCUIT AND LED DRIVER CIRCUIT HAVING THE SAME - A Light Emitting Diode (LED) driver circuit and a Pulse Width Modulation (PWM) controlling circuit thereof is provided. The LED driver circuit includes a voltage detector connected to a plurality of LED arrays, the voltage detector being configured to determine a connection status of each of the LED arrays according to a level of a feedback voltage of each of the LED arrays, and detect a minimum feedback voltage from the feedback voltage of each of the LED arrays that are determined to be connected, a controller configured to output a control signal to control boosting of the LED arrays according to the detected minimum feedback voltage, a PWM signal generator configured to output a PWM signal corresponding to the outputted control signal, and a driving voltage generator configured to supply a driving voltage commonly to the LED arrays according to the PWM signal. | 08-23-2012 |
20120200770 | SOURCE DRIVER, CONTROLLER, AND METHOD FOR DRIVING SOURCE DRIVER - A source driver, a controller, and a method for driving a source drive are provided. The source driver includes a controller configured to receive a start pulse signal, and generate and output one of a new start pulse signal if the start pulse signal is received, and an internal start pulse signal if the start pulse signal is not received, a shift register configured to receive video data, store the video data, and output the video data if the outputted start pulse signal is received by the shift register, a digital-to-analog converter (DAC) configured to convert the video data output from the shift register into an analog voltage signal, and output the analog voltage signal, and an output buffer configured to buffer the analog voltage signal output from the DAC, and output the buffered analog voltage signal. | 08-09-2012 |
20120182328 | BACKLIGHT DRIVING CIRCUIT AND DISPLAY APPARATUS - A backlight driving circuit that provides backlight to a display panel of a display apparatus includes a power supply unit configured to supply power, a converter configured to convert and output a voltage of the supplied power, a light-emitting module supplied with the outputted voltage from the converter and providing the backlight, a switch connected to an output terminal of the light-emitting module and controlling an operation of the light-emitting module, a feedback resistor connected to an output terminal of the switch and sensing a voltage of a current flowing in the light-emitting module, a short-circuit sensing resistor connected between a ground of the power supply unit and a ground of the feedback resistor, and a short-circuit sensor configured to sense a voltage value of a current applied to the feedback resistor or the short-circuit sensing resistor according to whether the switch is switched on or off. | 07-19-2012 |
20120171840 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a capacitor is provided. The method for fabricating a capacitor includes forming a dielectric layer over a lower electrode on a substrate, forming an upper electrode over the dielectric layer, forming a hard mask over the upper electrode, etching the hard mask to form a hard mask pattern, etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness, forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern, leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, and etching the lower electrode to be isolated. | 07-05-2012 |
20120153848 | REFERENCE VOLTAGE GENERATING CIRCUIT AND LED DRIVER CIRCUIT HAVING THE SAME THEREIN - A reference voltage generating circuit used for a light-emitting diode (LED) driver circuit and a light-emitting diode (LED) driver circuit are provided. A reference voltage generating circuit used for a light-emitting diode (LED) driver circuit includes a voltage measurer configured to sequentially measure feedback voltages of a plurality of LED arrays, the LED arrays being connected to one another in parallel, a quantizer configured to search for one of the plurality of LED arrays having a lowest feedback voltage of the measured feedback voltages, a comparator configured to compare an output of the voltage measurer with a preset comparison voltage to generate a reference voltage, and a timing controller configured to control the comparator to output the generated reference voltage corresponding to the one of the plurality of LED arrays. | 06-21-2012 |
20120142153 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method of fabricating a non-volatile memory device is provided. The method includes sequentially forming a tunnel insulation layer and a first polysilicon layer on a substrate, patterning the first polysilicon layer and the tunnel insulation layer, forming a dielectric layer to cover the patterned first polysilicon layer and the patterned tunnel insulation layer, forming a gate insulation layer on the substrate where the substrate is exposed, forming a second polysilicon layer to cover the dielectric layer, and forming a first floating gate and a second floating gate a fixed distance apart from each other, the forming of the first and second floating gates including etching middle portions of the second polysilicon layer, the dielectric layer, the patterned first polysilicon layer, and the patterned tunnel insulation layer, and separating the etched layers into two parts. | 06-07-2012 |
20120112656 | PWM SIGNAL GENERATING CIRCUIT FOR DC-DC CONVERTER USING DIMMING SIGNAL AND LED DRIVER CIRCUIT USING THE SAME IN DIGITAL PWM METHOD HAVING FIXED PHASE MODE - A PWM signal generating circuit and method, and an LED driver circuit using same, is disclosed. The PWM signal generating circuit generates a PWM signal for a DC-DC converter using a dimming signal, and includes an oscillator which generates a first clock signal having a predetermined frequency, a synchronizing unit which synchronizes the dimming signal to the first clock signal, and a PWM signal generating unit which generates the PWM signal in response to the first clock signal having a falling edge while the synchronized dimming signal is on. | 05-10-2012 |
20120112655 | PWM SIGNAL GENERATING CIRCUIT FOR DC-DC CONVERTER USING DIMMING SIGNAL AND LED DRIVING CIRCUIT HAVING THE SAME IN DIRECT DIGITAL DIMMING METHOD - An LED driving circuit is provided. The LED driving circuit includes an input unit which receives an input dimming signal for driving an LED array, a PWM signal generating unit which extends an on-period of the input dimming signal to form an extended dimming signal, and generates a PWM signal using the extended dimming signal, a DC-DC converter which supplies output voltage to the LED array using the PWM signal, and an LED driving unit which drives the LED array using the input dimming signal. | 05-10-2012 |
20120104564 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a multi-depth trench is formed, the multi-depth trench including a shallow trench and a deep trench arranged below the shallow trench, a first dielectric material formed in partial area of the multi-depth trench, the first dielectric material including a slope in the shallow trench that extends upward from a corner where a bottom plane of the shallow trench and a sidewall of the deep trench meets, the slope being inclined with respect to the bottom plane of the shallow trench, and a second dielectric material formed in areas of the multi-depth trench in which the first dielectric material is absent. | 05-03-2012 |
20120028394 | IMAGE SENSOR AND METHOD FOR FABRICATING SAME - An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode. | 02-02-2012 |
20120026152 | OVER-DRIVABLE OUTPUT BUFFER, SOURCE DRIVER CIRCUIT HAVING THE SAME, AND METHODS THEREFOR - Provided is an output buffer for a source driver circuit which receives an external buffer input signal and generates a buffer output signal having a predetermined target voltage, the output buffer including: an over-driving controller configured to generate a pair of first internal buffer input signals and a pair of second internal buffer input signals for an over-driving operation, based on a first over-driver enable signal and a second over-driver enable signal, the first and second over-driver signals being provided from an external source, and an output buffer unit configured to: perform the over-driving operation, based on the pair of first internal buffer input signals and the pair of second internal buffer input signals provided from the over-driving controller, and generate: a buffer output signal including a target voltage greater than the predetermined target voltage, or a buffer output signal including a target voltage less than the predetermined target voltage. | 02-02-2012 |
20110267387 | CIRCUIT AND METHOD FOR DRIVING A LIGHT EMITTING DIODE FOR A BACKLIGHT, AND BACKLIGHT DRIVING APPARATUS USING THE SAME - A circuit and method for driving a light emitting diode for a backlight, and a backlight driving apparatus using the same is provided. A circuit for driving a light emitting diode (LED) for a backlight includes a filtering unit configured to receive a pulse width modulation (PWM) signal and remove noise of a predetermined band, a duty stabilization unit configured to stabilize a duty of a PWM signal filtered by the filtering unit, a dimming signal generation unit configured to generate a dimming signal based on a PWM signal stabilized by the duty stabilization unit, and an LED driving unit configured to drive the LED for the backlight based on the dimming signal generated by the dimming signal generation unit. | 11-03-2011 |
20110227502 | CIRCUIT AND METHOD FOR GENERATING PWM SIGNAL FOR DC-DC CONVERTER USING DIMMING SIGNAL AND LED DRIVING CIRCUIT FOR BACKLIGHT HAVING THE SAME - A pulse width modulation (PWM) signal generating circuit that generates a PWM signal for a DC-DC converter using a dimming signal is provided. The PWM signal generating circuit includes a normal PWM signal generator configured to generate a normal PWM signal based on a clock signal provided to the DC-DC converter, and a compensation PWM signal generator configured to generate a compensation PWM signal based on the clock signal and the dimming signal. | 09-22-2011 |
20110227202 | SILICON WAFER AND FABRICATION METHOD THEREOF - A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen uniformly distributed within a variation of 10% over the bulk area. | 09-22-2011 |
20110204963 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, including a charge-pumping unit configured to charge-pump power voltage in every period of a pumping clock to generate pumping voltage, a first voltage level detection unit configured to detect a maximum voltage level of the generated pumping voltage, a second voltage level detection unit configured to detect a minimum voltage level of the generated pumping voltage, and a pumping clock generating unit configured to generate the pumping clock, the pumping clock having a frequency that is adjusted in response to an output signal of the first and the second voltage level detection units. | 08-25-2011 |
20110199353 | SHIFT REGISTER CIRCUIT, SOURCE DRIVER INCLUDING THE SAME, AND METHOD - A shift register circuit and method includes: a plurality of shift registers configured to generate latch clock signals by sequentially shifting input signals according to first and second clock signals, the first and second clock signals including: periods longer than a shift register clock signal, and phases different from each other, wherein odd shift registers among the plurality of shift registers are configured to be driven by the first clock signal, and wherein even shift registers are configured to be driven by the second clock signal. | 08-18-2011 |
20110148481 | WAVEFORM GENERATION CIRCUIT - A waveform generation circuit includes: a waveform generation block configured to generate a waveform signal corresponding to a driving control signal; and a control signal generation block configured to generate a driving control signal for compensating the waveform signal for an environmental factor reflected into the waveform generation circuit. | 06-23-2011 |
20110148384 | CIRCUIT FOR GENERATING BOOSTED VOLTAGE AND METHOD FOR OPERATING THE SAME - A boosted voltage generation circuit may include: a boosting circuit configured to boost an input voltage based on a boosting rate and output a boosted voltage, a boosting rate setting unit configured to receive a feedback on a level of the input voltage and set a boosting rate, and an input voltage level setting unit configured to set the level of the input voltage in response to a target level of the boosted voltage and the boosting rate. | 06-23-2011 |
20110115020 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 05-19-2011 |
20110115016 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end ;portion thereof extending over the isolation layer. | 05-19-2011 |
20110109375 | CHARGE PUMP APPARATUS AND CHARGE PUMPING METHOD - A charge pumping method includes: generating a first boosted voltage by boosting an input voltage by a boosting mode of a first multiplier; changing the level of a voltage charged in at least one capacitor provided in the inside of a charge pump circuit, in preparation for a change in the boosting mode; and generating a second boosted voltage by boosting the input voltage by a boosting mode of a second multiplier. | 05-12-2011 |
20110108951 | SEMICONDUCTOR DEVICE WITH MIM CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a lower electrode formed on a substrate, a dielectric layer including an etched dielectric region and an as-grown dielectric region formed on the lower electrode, an upper electrode formed on the as-grown dielectric region, a hardmask formed on the upper electrode, a spacer formed at a side surface of the hardmask and the upper electrode and over a surface of the etched dielectric region, and a buffer insulation layer formed on the hardmask and the spacer. | 05-12-2011 |
20110079875 | ANTI-FUSE AND METHOD FOR FORMING THE SAME, UNIT CELL OF NON VOLATILE MEMORY DEVICE WITH THE SAME - There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions. | 04-07-2011 |
20110069232 | DEVICE AND METHOD FOR DRIVING DISPLAY PANEL - An apparatus for driving a display panel includes: a time variant signal (TVS) generator configured to generate a time variant signal group; a common pulse signal generator configured to generate a plurality of pulse signals; a selector configured to receive the time variant signal, the plurality of the pulse signals, and video data and select a grayscale voltage corresponding to the video data; and a buffer configured to buffer and transfer an output of the selector. Herein, the selector and the buffer are provided to each of a plurality of channels, and the time variant signal and the plurality of the pulse signals are inputted in common to the selector of each channel. | 03-24-2011 |
20100258865 | TRANSISTOR HAVING RECESS CHANNEL AND FABRICATING METHOD THEREOF - A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench. | 10-14-2010 |
20100144109 | TRANSISTOR IN A SEMICONDUCTOR SUBSTRATE HAVING HIGH-CONCENTRATION SOURCE AND DRAIN REGION FORMED AT THE BOTTOM OF A TRENCH ADJACENT TO THE GATE ELECTRODE - The present invention relates to a transistor in a semiconductor device and method of manufacturing the same. Trenches are formed in a semiconductor substrate at gate edges. Low-concentration impurity regions are then formed at the sidewalls and the bottoms of the trenches. High-concentration impurity regions are formed at the bottoms of the trenches in a depth shallower than the low-concentration impurity regions. Source/drain consisting of the low-concentration impurity regions and the high-concentration impurity regions are thus formed. Therefore, the size of the transistor can be reduced while securing a stabilized operating characteristic even at high voltage. It is thus possible to improve reliability of the circuit and the degree of integration in the device. | 06-10-2010 |
20100066418 | DIFFERENTIAL CURRENT DRIVING TYPE DATA TRANSMISSION SYSTEM - A differential current driving type data transmission system includes a line drive controller for outputting differential transmission signals and common mode line control signals, in response to a transmission signal; current sources for generating an excitation current and a base current and for driving positive/negative transmission lines with the base current; a first switch for selectively switching the excitation current to the positive/negative transmission lines, in response to the differential transmission signals; and a second switch for equalizing the positive/negative transmission lines within a common mode interval, in response to the common mode line control signals, wherein, in the common mode, the positive/negative transmission lines are driven at a level above or below an intermediate current level by a predetermined common mode current difference. | 03-18-2010 |
20090026510 | Image sensor and method for fabricating the same - An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode. | 01-29-2009 |
20080317363 | METHOD AND APPARATUS FOR IMAGE DATA PROCESSING - An image data processing apparatus includes an encoding unit, a storage unit, a decoding unit and a Digital-to-Analog (D/A) converter. The encoding unit receives image data, compares (2n−1)th pixel data with (2n)th pixel data, and creates a header value, an encoding value and a reference value, which are used to encode the pixel data. The storage unit is connected to the encoding unit, and stores the header value, the encoding value and the reference value, which are created by the encoding unit. The decoding unit is connected to the storage unit, and restores the (2n−1)th pixel data and the (2n)th pixel data using the header value, the encoding value and the reference value. The D/A converter is connected to the decoding unit, converts the restored image data into analog signals, and outputs the analog signals. | 12-25-2008 |
20080204583 | Adapted piecewise linear processing device - A piecewise linear processing device applies different amplification rates according to a general environment and a low luminance environment where much noise exists. The piecewise linear processing device includes a knee point storing unit configured to store a user's default setting value and low luminance setting value; a luminance detecting unit configured to detect a noisy environment to output a current luminance information signal and a maximum luminance information signal; an adaptive knee point supply unit configured to receive the default setting value, the low luminance setting value, the current luminance information signal, and the maximum luminance information signal to supply a adjusted adaptive knee point according to a degree of noise; and a piecewise linear processing unit configured to apply a section amplification rate to an input data on the basis of a region corresponding to the adaptive knee point. | 08-28-2008 |