JEMCO INC. Patent applications |
Patent application number | Title | Published |
20120258297 | TIN-DOPED INDIUM OXIDE FINE PARTICLE DISPERSION , METHOD FOR MANUFACTURING THE SAME, INTERLAYER FILM FOR LAMINATED GLASS WITH HEAT RAY BLOCKING PROPERTIES FORMED BY USING SAID DISPERSION, AND LAMINATED GLASS THEREWITH - A dispersion of tin-doped indium oxide fine particles has tin-doped indium oxide fine particles, a plasticizer for an interlayer film, an organic solvent containing alcohols as a main component, and a dispersion stabilizer, wherein under measuring conditions of a concentration of tin-doped indium oxide fine particles of 0.7% by weight and an optical path length of a glass cell of 1 mm, a visible light transmittance is 80% or more, a solar radiation transmittance at a wavelength within a range from 300 nm to 2100 nm is ¾ or less of the visible light transmittance, a haze value is 1.0% or less, and a reflection yellow index is −20 or more. | 10-11-2012 |
20100075229 | POSITIVE ELECTRODE FORMING MATERIAL, COMPONENT THEREOF, METHOD FOR PRODUCING THE SAME AND RECHARGEABLE LITHIUM-ION BATTERY - Disclosed is a positive electrode forming material for a positive electrode of a battery, the material including particles of a positive electrode active material and fine carbon fibers adhering to surfaces of particles of the positive electrode active material in a shape of a network. The positive electrode active material is preferably fine particles having an average particle diameter of 0.03 to 40 μm. Each of the fine carbon fibers is preferably carbon nanofiber having an average fiber diameter of 1 to 100 nm and an aspect ratio of 5 or greater. The carbon nanofiber is surface-oxidized. The positive electrode forming material includes a binder. The content of the fine carbon fibers is 0.5 to 15 parts by mass and the content of the binder is 0.5 to 10 parts by mass with respect to 100 parts by mass of the positive electrode active material. | 03-25-2010 |
20090297425 | METALLIC SILICON AND METHOD FOR MANUFACTURING THE SAME - This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200° C. or below at a rate of 2° C./min or less. | 12-03-2009 |
20090118543 | METHOD FOR PRODUCING TRIFLUOROMETHANESULFONIC ANHYDRIDE - This method for producing trifluoromethanesulfonic anhydride reacting trifluoromethanesulfonic acid with phosphorus pentoxide to produce trifluoromethanesulfonic anhydride, wherein hardening of the reaction solution due to polyphosphoric acid, which is produced as a byproduct, is prevented by using an excess amount of trifluoromethanesulfonic acid with respect to the phosphorus pentoxide. | 05-07-2009 |
20090050239 | BRAZING FLUX POWDER FOR ALUMINUM-BASED MATERIAL AND PRODUCTION METHOD OF FLUX POWDER - It is aimed at providing a brazing flux powder, which exhibits an excellent spreadability in case of brazing of an Mg-containing aluminum-based material, which is non-corrosive and is thus excellent in safety, which is relatively inexpensive and is thus economically excellent, and which can be used in a wide and general manner. There is provided an improvement in a flux powder containing therein KAlF | 02-26-2009 |