IQE, KC, LLC Patent applications |
Patent application number | Title | Published |
20140175519 | METHOD AND LAYER STRUCTURE FOR PREVENTING INTERMIXING OF SEMICONDUCTOR LAYERS - A semiconductor device includes an etch-stop layer between a first layer of a field-effect transistor and a second layer of a bipolar transistor, each of which includes at least one arsenic-based semiconductor layer. A p-type layer is between the second layer and the etch-stop layer, and the device can include an n-type layer deposited between the etch-stop layer and p-type layer. The p-type layer provides an electric field that inhibits intermixing of the InGaP layer with layers in the first and second layers. | 06-26-2014 |
20140167058 | COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR - An epitaxial structure on a substrate includes a gallium nitride buffer layer over the substrate and a graded channel layer over the gallium nitride layer. The graded channel layer consists essentially of In | 06-19-2014 |