HYOGO PREFECTURE Patent applications |
Patent application number | Title | Published |
20140083976 | CLUSTER BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, CLUSTER BEAM GENERATING METHOD, AND SUBSTRATE PROCESSING METHOD - A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam. | 03-27-2014 |
20130098758 | POWDER, SINTERED BODY AND SPUTTERING TARGET, EACH CONTAINING ELEMENTS OF CU, IN, GA AND SE, AND METHOD FOR PRODUCING THE POWDER - The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less. | 04-25-2013 |
20130075248 | ETCHING METHOD, ETCHING APPARATUS, AND STORAGE MEDIUM - Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound. | 03-28-2013 |
20120128892 | SURFACE PROCESSING METHOD AND SURFACE PROCESSING APPARATUS - A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed. | 05-24-2012 |
20120125889 | CLUSTER BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, CLUSTER BEAM GENERATING METHOD, AND SUBSTRATE PROCESSING METHOD - A cluster beam generating apparatus that generates a cluster beam includes a mixer that mixes a gas source material and a liquid source material; a nozzle that supplies a cluster beam including clusters originating from the gas source material and the liquid source material that are mixed in the mixer; and a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam. | 05-24-2012 |
20110148006 | FIBRE-PRODUCTION DEVICE AND FIBRE-PRODUCTION METHOD - A fiber-producing apparatus includes a storage tank for storing a melt of a source material, an electric storage tank heater, a non-contact thermometer for the melt, a temperature control section which between the electric heater and its power supply, which controls the electric heater based on measurement results obtained from the non-contact thermometer to adjust the temperature of the melt, a nozzle for ejecting the melt in the storage tank, a collector for collecting a fiber, a voltage generator for electrifying the melt, and an insulating transformer disposed between the temperature control section and the electric heater. Since a closed circuit is formed by the electric heater, the electric heater power supply, the temperature control section, and the insulating transformer disposed therebetween, no high-voltage current flows into the electric heater power supply or the temperature control section. This allows stable spinning to be readily performed without breaking the apparatus. | 06-23-2011 |
20100320380 | CHARGED PARTICLE SEPARATION APPARATUS AND CHARGED PARTICLE BOMBARDMENT APPARATUS - A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough. | 12-23-2010 |
20100319545 | CHARGED PARTICLE SEPARATION APPARATUS AND CHARGED PARTICLE BOMBARDMENT APPARATUS - A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes three or more electric field applying parts arranged in an incident direction of an ionized gas cluster, wherein each of the electric field applying parts includes a pair of electrodes; an electric power source configured to supply alternating-current electric voltages to the three or more electric field applying parts in such a manner that an alternating-current electric voltage applied across one pair of the electrodes of one of the three or more electric field applying parts is different in phase from an alternating-current voltage applied across another pair of the electrodes of an adjacent one of the three or more electric field applying parts; and a plate including an opening in an extension of the incident direction. | 12-23-2010 |