HITACHI-KOKUSAI ELECTRIC INC.
|HITACHI-KOKUSAI ELECTRIC INC. Patent applications|
|Patent application number||Title||Published|
|20150256232||METHOD FOR SELECTION OF RECEIVED TELEGRAM IN TRAIN WIRELESS COMMUNICATIONS SYSTEM - A method for selection of a received telegram in a train wireless communications system including a plurality of wireless base stations situated along the train tracks, for respectively communicating with a higher level device through a wired circuit, and at least one terminal having at least two or more antennas installed in cars of the train moving down the track, during a predetermined transmission interval of a downstream telegram received from a higher level device, the wireless base station twice transmits telegrams that include at least identical content; the terminal, using the plurality of antennas, receives the telegrams transmitted by the wireless base station, selects the received telegram having the best reception from among those received by the plurality of antennas as the received telegram, and transmits a response telegram to the wireless base station, in response to the telegram received from the wireless base station.||09-10-2015|
|20150255274||METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.||09-10-2015|
|20150255269||METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.||09-10-2015|
|20150253762||INTEGRATED MANAGEMENT SYSTEM, MANAGEMENT DEVICE, METHOD OF DISPLAYING INFORMATION FOR SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - An integrated management system including a substrate processing apparatus configured to process a substrate and a management device is provided. The management device includes an accumulation unit configured to accumulate specified information including power consumption information indicating a power consumed in the substrate processing apparatus, gas consumption information indicating a gas consumed in the substrate processing apparatus, or operation information indicating an operation state of the substrate processing apparatus; and a processing display unit configured to acquire predetermined information that meets a predetermined condition from the specified information accumulated in the accumulation unit and calculate at least one among a power consumption consumed in the substrate processing apparatus, an inert gas consumption, and an operation rate of the substrate processing apparatus based on the predetermined information.||09-10-2015|
|20150252474||SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes: a process chamber including a source gas supply and a reactive gas supply to process a plurality of substrates in the source gas supply and the reactive gas supply; a substrate placement unit rotating in the process chamber, wherein the plurality of substrates are placed on the substrate placement unit along a rotational direction thereof; a plasma generator to generate plasma in plasma generation chamber installed an upper portion of the reactive gas supply; a coil wound along an outer circumference of the plasma generation chamber, a portion of which adjacent to a sidewall of the plasma generation chamber has a constant curvature; a reactive gas supply system to supply a reactive gas to the reactive gas supply via the plasma generation chamber through a ceiling of the plasma generation chamber; and a source gas supply system to supply a source gas.||09-10-2015|
|20150243507||METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film.||08-27-2015|
|20150243499||METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.||08-27-2015|
Patent applications by HITACHI-KOKUSAI ELECTRIC INC.