Fuji Electric Systems Co., Ltd. Patent applications |
Patent application number | Title | Published |
20120192911 | THIN-FILM SOLAR CELL - A thin-film solar cell includes a plurality of unit solar cells, each unit solar cell including a photoelectric conversion portion and a rear electrode layer. The photoelectric conversion portion has a first electrode layer, a photoelectric conversion layer, and a second transparent electrode layer, sequentially stacked on a front surface of the insulating substrate. The rear electrode layer is stacked on a rear surface of the insulating substrate. Each unit solar cell has a first overlap region in which a portion of the first electrode layer, taken from a plan view, overlaps with a portion of the rear electrode layer of an adjacent unit solar cell. Each unit solar cell has a second overlap region in which the photoelectric conversion portion and the rear electrode layer of each unit solar cell, taken from a plan view, overlap with each other. | 08-02-2012 |
20120154026 | INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE - An integrated circuit ( | 06-21-2012 |
20120111924 | LEAD-FREE SOLDER - According to one embodiment of the invention, there is provided a lead-free solder including an alloy rolled into a shape of sheet. The alloy includes: tin; from 10 wt % to less than 25 wt % of silver; and from 3 wt % to 5 wt % of copper. The alloy is free from lead. | 05-10-2012 |
20120067278 | THIN FILM SOLAR CELL MANUFACTURING APPARATUS - A thin film solar cell manufacturing apparatus is provided which prevents the occurrence of transport wrinkles due to driving rollers transporting the film substrate, and which can improve workability. In the thin film solar cell manufacturing apparatus, a strip-shape flexible film substrate wrapped around a feedout roller is fed to a film deposition chamber maintained substantially in a vacuum state, electric discharge is induced across ground electrodes and application electrodes opposed each other and having target material in the film deposition chamber, metal thin film, which becomes an electrode, is formed on the surface of the film substrate by constant heating, and the film substrate formed with metal thin film is taken up by a takeup roller provided in a takeup chamber; in the takeup chamber | 03-22-2012 |
20120003574 | ELECTROPHOTOGRAPHY PHOTORECEPTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTROPHOTOGRAPHY DEVICE USING THE SAME - A positive-charging electrophotography photoreceptor includes a laminated structure having a conductive supporting member, a charge transport layer formed of at least a hole transport material and a first binder resin, and a charge generation layer formed of at least a charge generation material, hole transport material, electron transport material, and second binder resin. The charge transport layer is disposed between the conductive supporting member and the charge generation layer. The content of the charge generation material in the charge generation layer is in a range exceeding 0.7 wt % and less than 3.0 wt % of the charge generation layer. | 01-05-2012 |
20110253189 | THIN-FILM SOLAR CELL - A thin-film solar cell includes an insulating substrate and multiple unit solar cells. Each unit solar cell includes a photoelectric conversion portion having a first electrode layer, a photoelectric conversion layer, and a second transparent electrode layer, formed on a front surface of the insulating substrate, and a rear electrode layer formed on a rear surface of the insulating substrate. A portion of the first electrode layer of a first unit solar cell, taken from a plan view, overlaps an extending portion of the rear electrode layer of an adjacent second unit solar cell. The first electrode layer of the first unit solar cell is electrically connected to the rear electrode layer of the adjacent second unit solar cells via at least one connection hole passing through the insulating substrate and being connected to the extending portion. | 10-20-2011 |
20110248564 | Electric power converting system - An electric power converting system includes a common DC power supply, and a plurality of inverter sets operated mutually independently to one another, and supplied with electric power from the common DC power supply. Each inverter set has an inverter circuit and a main circuit capacitor. The system further includes a plurality of first and second switching circuits. Each first switching circuit is provided between the common DC power supply and each inverter set, and each second switching circuit is provided in each inverter set for discharging charges in the main circuit capacitor. | 10-13-2011 |
20110244381 | ELECTROPHOTOGRAPHIC PHOTOCONDUCTOR, MANUFACTURING METHOD THEREOF, AND ELECTROPHOTOGRAPHIC DEVICE - Provided is an electrophotographic photoconductor that has good coating solution stability and metal oxide dispersibility, is free of image defects including ground fogging and black spots, and affords good image characteristics in various environments, as well as a manufacturing method therefore and a device including the same. The electrophotographic photoconductor includes a conductive substrate; an undercoat layer; and a photosensitive layer. The undercoat layer contains, as a main component, a resin obtained by polymerizing, as starting materials, an aromatic dicarboxylic acid, at least one aliphatic dicarboxylic acid having 8 or more carbon atoms, and at least one diamine having a cycloalkane structure, and further contains a metal oxide. The aromatic dicarboxylic acid in the resin is present in an amount that ranges from 0.1 to 10 mol %, and the resin has an acid value and a base value that are each no greater than 10 KOH mg/g. | 10-06-2011 |
20110239649 | Steam Characteristics Automatic Measuring Device and Geothermal Power-Generating Device - Provided is a steam characteristics automatic measuring device capable of automatically, ideally also continuously measuring the characteristics of steam taken from a production well, without being affected by interfering components, such as hydrogen sulfide gas and carbon dioxide gas contained in large quantities in steam taken from under the ground, which enables the operator to continuously understand the characteristics of steam and support a smooth operation of a geothermal power plant. The device has a silica monitor for measuring a concentration of silica included in a condensate obtained by cooling steam taken from under the ground; an electrical conductivity meter for automatically measuring the electrical conductivity thereof; a pH meter for automatically measuring the pH value thereof; and a data processing transmitter for automatically transmitting data measured by each of the monitor and meters. A geothermal power-generating device equipped with the steam characteristics automatic measuring device is also provided. | 10-06-2011 |
20110233714 | SEMICONDUCTOR DEVICE - Aspects of the invention are related to a semiconductor device including a first conductivity type n-type drift layer, a second conductivity type VLD region which is formed on a chip inner circumferential side of a termination structure region provided on one principal surface of the n-type drift layer and which is higher in concentration than the n-type drift layer, and a second conductivity type first clip layer which is formed on a chip outer circumferential side of the VLD region so as to be separated from the VLD region and which is higher in concentration than the n-type drift layer. The invention can also include a first conductivity type channel stopper layer which is formed on a chip outer circumferential side of the first clip layer so as to be separated from the first clip layer and which is higher in concentration than the n-type drift layer. | 09-29-2011 |
20110228575 | JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING POWER SUPPLY, AND SWITCHING POWER SUPPLY - A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors. | 09-22-2011 |
20110215781 | DIGITAL CONTROL SWITCHING REGULATOR HAVING AN INPUT VOLTAGE DETECTION CIRCUIT - A digital control switching regulator of the invention ON/OFF-controls switching elements by digital-controlled pulse width modulation signals and converts an input voltage to a desired output voltage. The switching regulator includes an input voltage detection circuit that includes: a voltage dividing circuit outputting a divided voltage of the input voltage; a comparator section comparing the divided voltage of the input voltage with a first reference voltage and a second reference voltage and outputting a first comparison signal and a second comparison signal indicating comparison results; and a control section controlling a dividing ratio of the voltage dividing circuit based on the first comparison signal and the second comparison signal to obtain the predetermined divided voltage, thereby outputting an input voltage digital signal corresponding to the input voltage. The input voltage digital signal controls controller coefficients for use in the digital control. | 09-08-2011 |
20110215751 | Electric power converter - An electric power converter includes a control unit outputting a PWM signal, a bridge circuit producing AC electric power supplied to a motor by turning semiconductor switching devices in the bridge on and off in response to PWM signals, a cut off unit cutting the PWM signals off from the bridge circuit in response to a gate signal, and a monitoring unit generating a test signal for checking the cut off unit. The cut off unit includes a switching circuit switching between the test signal and an external cut off signal, and a delay circuit that delays the output of the switching circuit. The arrangement enables the electric power converter to monitor as to whether the cut off unit is abnormal without stopping the operation of the electric power converter. | 09-08-2011 |
20110214897 | Housing of waterproof electronic device - A housing for a waterproof electronic device includes a case with a front opening adapted to receive circuit components therein, and a front cover attached to the case so as to cover the case. The front cover is fitted onto a periphery of the front opening of the case so as to prevent rainwater from entering from outside. The case has an arched top plate, and includes, at a front of the case, a fitting stage, to which the front cover is fitted, so as to protrude from the case along the periphery of the front opening. The fitting stage has right and left side wall sections and at least one drain groove provided along peripheral surfaces of the top plate and both of the right and left side wall sections so that lower ends of the drain groove open downward at a bottom of the case. | 09-08-2011 |
20110207296 | FABRICATION METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor-device fabrication method includes forming a second semiconductor region of a second conductivity on a surface layer of a first semiconductor region of a first conductivity, the second semiconductor region having an impurity concentration higher than the first semiconductor region; forming a trench penetrating the second semiconductor region, to the first semiconductor region; embedding a first electrode inside the trench via an insulating film, at a height lower than a surface of the second semiconductor region; forming an interlayer insulating film inside the trench, covering the first electrode; leaving the interlayer insulating film on only a surface of the first electrode; removing the second semiconductor region such that the surface thereof is positioned lower than an interface between the first electrode and the interlayer insulating film; and forming a second electrode contacting the second semiconductor region and adjacent to the first electrode via the insulating film in the trench. | 08-25-2011 |
20110204485 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion. | 08-25-2011 |
20110204437 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device having a low on resistance and high integration level with respect to the surface area of a substrate is provided. In the semiconductor device, a first trench, a second trench, and a third trench are provided in an element formation region provided on a semiconductor substrate. Metal is deposited within the first trench and second trench, to form a drain electrode and a source electrode, respectively. Polysilicon is deposited inside the third trench with a gate insulating film intervening, and a gate electrode is formed. | 08-25-2011 |
20110189603 | ELECTROPHOTOGRAPHIC PHOTOCONDUCTOR AND MANUFACTURING METHOD THEREOF - Electrophotographic photoconductor including a conductive substrate; and a photosensitive layer provided on the conductive substrate and including at least a charge generation material; a charge transport material; and a resin binder including a copolymer polyarylate resin represented by general formula (I) below: | 08-04-2011 |
20110186999 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Hardness of bonding end portions of an external connection terminal to be bonded to circuit patterns of an insulating substrate which is not lower than 90 in Vickers hardness is disclosed. An ultrasonic welding tool is used. In the external connection terminal in which the bonding end portions are provided integrally with a bar, one of the bonding end portion located substantially in the lengthwise center of the bar is first bonded, and the other bonding end portions are bonded alternately in order toward either end. The hardness of the bonding end portions is increased so that strength of the ultrasonic welding portions is increased. Since the external connection terminal including the bonding end portions is bonded in such a manner that the bonding end portion located substantially in the center is first bonded and the other bonding end portions are then bonded in order of increasing distance substantially from the central bonding end portion, displacement of the bonding end portion in either end from its regular position can be suppressed to keep bonding strength high. In this manner, the bonding strength of the ultrasonic welding portions between the external connection terminal and the circuit patterns of the insulating substrate can be increased so that long-term reliability can be secured in a semiconductor device. | 08-04-2011 |
20110186965 | REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR - Reverse-conducting insulated gate bipolar transistor in which IGBT region and FWD region are integrated into a single body in a semiconductor substrate with a common active region is disclosed. MOS gate structure is on a first major surface side. Rear surface side structure is in a second major surface side of the semiconductor substrate and includes a plurality of recessed parts vertical to the second major surface, which are repeated periodically along the second major surface. A plurality of protruding parts are interposed between the recessed parts. Rear surface side structure includes p type collector region on a bottom surface of the recessed part, n type first field stop region at a position deeper than the collector region, n type cathode region on the top surface of the protruding part, and n type second field stop region in the protruding part at a position deeper than the cathode region. | 08-04-2011 |
20110183246 | NOVEL ETHYLENE COMPOUND, CHARGE TRANSPORT MATERIAL CONTAINING ETHYLENE COMPOUND, ELECTROPHOTOGRAPHIC PHOTORECEPTOR CONTAINING ETHYLENE COMPOUND, AND PROCESS FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTORECEPTOR - An ethylene compound having general formula (I) below: | 07-28-2011 |
20110156137 | TRENCH GATE SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A trench gate semiconductor device is disclosed which has a trench gate structure including an insulator in the upper portion of a first trench, the insulator being on a gate electrode; a source region having a lower end surface positioned lower than the upper surface of the gate electrode; a second trench in the surface portion of a semiconductor substrate between the first trenches, the second trench having a slanted inner surface providing the second trench with the widest trench width at its opening and a bottom plane positioned lower than the lower end surface of the source region, the slanted inner surface being in contact with the source region; and a p-type body-contact region in contact with the slanted inner surface of the second trench. The trench gate semiconductor device and its manufacturing method facilitate increasing the channel density and lowering the body resistance of the parasitic BJT. | 06-30-2011 |
20110144947 | Online Diagnostic Method and Online Diagnostic System for Geothermal Generation Facility - An online diagnostic system for a geothermal generation facility is discloses that includes: an automatic steam measurement device for measuring a characteristic of steam to be supplied to a steam turbine from a steam-water separator at the geothermal generation facility that outputs analysis data. A monitor•control device controls an operation of the geothermal generation facility while monitoring the geothermal generation facility. A diagnostic device performs at least one of an evaluation of a steam characteristic at the geothermal generation facility, an evaluation of the steam-water separator, and an evaluation of pulsation and confluence of a production well based on the analysis data from the automatic steam measurement device and performance data of the geothermal generation facility from the monitor•control device. An operating status of the geothermal generation facility is diagnosed. | 06-16-2011 |
20110141631 | POWER FACTOR CORRECTION TYPE SWITCHING POWER SUPPLY UNIT - A power factor correction type switching power supply unit can change reference values of an overcurrent limit at an optimum timing at a time of an overcurrent protection of a step-up type converter, so that no sudden change occurs in an inductor current. A detection level selection circuit selects one of first and second threshold values with a selection signal, and outputs it as an overcurrent detection level to an overcurrent detection circuit. An input voltage monitoring circuit determines the selection signal in such a way that the larger of two threshold values is selected when an alternating current input voltage exceeds a first reference voltage, and the smaller threshold value is selected when the alternating current input voltage does not exceed a second reference voltage, and outputs the selection signal to the detection level selection circuit at a timing at which the alternating current input voltage approaches a zero. | 06-16-2011 |
20110134710 | Level shift circuit - A feedback circuit by which an output of a memory device for storing level-shifted data can be fed back to the input side includes inverters, resistors, and transistors. The resistance value of combined resistance for pulling up or down first and second switching devices is varied in accordance with the output of the memory device by the feedback circuit, so that malfunction caused by dv/dt noise can be dealt with out generating any through current. In this manner, it is possible to provide a level shift circuit which can deal with malfunction causing dv/dt noise regardless of an on or off state of a high-potential-side switching device, while generation of a through current can be suppressed. | 06-09-2011 |
20110133269 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes, below a high-voltage wiring, a p | 06-09-2011 |
20110133246 | INTERNAL COMBUSTION ENGINE IGNITER SEMICONDUCTOR DEVICE - An internal combustion engine igniter semiconductor device is disclosed which is low cost yet secures energy withstand and reverse surge withstand capability. An IGBT includes a clamping diode between a collector electrode and a gate electrode. The IGBT has two n-type buffer layers of differing impurity concentrations between a p | 06-09-2011 |
20110129989 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DEVICE FOR SAME - Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented. | 06-02-2011 |
20110124160 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor substrate and a method of its manufacture has a semiconductor substrate having a carbon concentration in a range of 6.0×10 | 05-26-2011 |
20110122664 | POWER FACTOR CORRECTION TYPE SWITCHING POWER SUPPLY UNIT - A soft-stop overvoltage protection circuit, into which a soft-stop overvoltage detection voltage proportional to a direct current output voltage is input, reduces the output of a multiplier in accordance with the soft-stop overvoltage detection voltage when the soft-stop overvoltage detection voltage exceeds a first threshold value. An overvoltage protection circuit, a second threshold value higher than the first threshold value being set, compulsorily turns off a switching element by outputting an overvoltage detection signal when the soft-stop overvoltage detection voltage exceeds the second threshold value. The soft-stop overvoltage protection circuit compulsorily increases the output of a voltage error amplifier circuit on the output voltage decreasing. When the output of the voltage error amplifier circuit increases suddenly, and the output voltage rises excessively, the soft-stop overvoltage protection circuit decreases the output of the multiplier, thus curbing the rise of the output voltage. | 05-26-2011 |
20110109281 | POWER FACTOR CORRECTION TYPE SWITCHING POWER SUPPLY UNIT - A multiplier multiplies a current signal of an Iy generator and a voltage signal from a Vx generator corresponding to a divided voltage value of an output voltage of a full-wave rectifier. The result of the multiplication is output as a current reference signal to the non-inversion input terminal of a current error amplifier. A current peak waveform generator circuit generates an envelope waveform of peak values of an inductor current. An Iz generator, when the envelope waveform exceeds a first threshold value smaller than a third threshold value set in an overcurrent protection circuit, curbs the inductor current by adjusting the size of a current signal output to the multiplier, and reducing the current reference signal. | 05-12-2011 |
20110108883 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Cutting work is performed on an n-semiconductor substrate ( | 05-12-2011 |
20110101234 | NEUTRON DOSIMETER - In a neutron dosimeter, G(L) function data, which causes the tendency of a characteristic when neutron energy is plotted along the horizontal axis and the ambient dose equivalent (1 cm dose equivalent) is plotted along the vertical axis to approximate a neutron fluence-ambient dose equivalent (1 cm dose equivalent) conversion coefficient curve (neutron energy-ICRP 74 H* (10) response curve), is used to compensate the output of a mixed gas detector which encapsulates a gas mixture of a nitrogen gas and an organic compound gas and outputs detection pulse signals with peaks according to the energies of detected neutrons. | 05-05-2011 |
20110086457 | THIN FILM LAMINATED BODY MANUFACTURING APPARATUS AND METHOD - A strip-shape flexible substrate is transported over a long horizontal distance, with its width extending in the vertical direction, the position of the substrate in the vertical direction is maintained with high precision, and the films are deposited onto its surface. When depositing the thin films to manufacture a thin film laminated body, at least one pair of gripping rollers arranged in at least one space between film deposition chambers, and which grasps an upper-side edge portion of the substrate with its width oriented in the vertical direction, are installed such that the rotation direction of the gripping rollers is diagonally upward, at an angle relative to the direction of transport of the substrate, and by changing the force with which the gripping rollers grasp the substrate, a force lifts the substrate, and the height of the substrate can be controlled. | 04-14-2011 |
20110081752 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer. Thereafter, the double-sided adhesive tape is removed from the collector electrode to produce semiconductor chips. A highly reliable reverse-blocking semiconductor device can thus be formed at a low cost. | 04-07-2011 |
20110075464 | Synchronous rectification control device, method for synchronous rectification control, and insulated type switching power supply - A synchronous rectification control device achieves high power conversion efficiency without supplying additional signal to a secondary side from a primary side. An insulated type switching power supply provides such a synchronous rectification control device. An output power is regulated based on a phase difference between two half bridges in the primary side. In the secondary side of the full bridge converter circuit, a center tap is lead out from the secondary windings of a transformer to obtain two symmetrical sections of windings. A device for detecting winding voltage observes winding voltages at terminals of the sections of windings. The synchronous rectification control circuit controls transistors and MOSFETs connected to the secondary windings to make the transistor in the ON or OFF state depending on the current flow in the secondary windings. | 03-31-2011 |
20110068965 | DIGITAL CONTROL SWITCHING POWER SUPPLY UNIT - A digital control switching power supply unit converts an input voltage into a desired output voltage using a digitally controlled pulse width modulation (PWM) signal according to a switching cycle. The power supply unit includes an analog-to-digital converter (ADC). The ADC converts a result of a comparison between an output voltage and a reference voltage to a digital signal during a conversion cycle. The ADC includes a circuit for outputting a phase difference between a switching cycle and the conversion cycle, and a delay circuit. The delay circuit generates a delay output current based on a result of the comparison and the phase difference and determines the conversion time delay according to the delay output current. The delay circuit also generates a delay reference current based on the reference voltage and the phase difference and determining the duration of the conversion cycle according to the delay reference current. | 03-24-2011 |
20110063127 | EXPOSURE MANAGEMENT SYSTEM, DOSIMETER, AND WIRELESS RELAY DEVICE - An exposure management system includes dosimeters, wireless relay devices that wirelessly communicate with the dosimeters, and a monitoring device. The dosimeters are carried by workers for measuring exposure doses in a radiation management facility. The wireless relay devices transmit a monitor indication message that requests the dosimeters to provide respective responses that include information of measured exposure doses. The wireless relay devices receive the responses from the dosimeters by using allocated respective communication channels that are different from each other. Each dosimeter receives the monitoring indication message and generates a designated number of response times for providing a response to the monitor indication message, and determines a communication channel corresponding to each of the generated response times. The monitoring device is connected to the wireless relay devices for monitoring an exposure state of each of the workers through the wireless relay devices and dosimeters. | 03-17-2011 |
20110050269 | Method for evaluating semiconductor device - A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved. | 03-03-2011 |
20110043269 | Level shift circuit - In a level shift circuit in a high electric potential side driving circuit, a latch circuit and a transmission circuit located at the front stage of the latch circuit are provided. The transmission circuit makes its output impedance high when two inputs V | 02-24-2011 |
20110042816 | SEMICONDUCTOR APPARATUS AND FABRICATION METHOD THEREOF - A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×10 | 02-24-2011 |
20110037166 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device ( | 02-17-2011 |
20110012543 | ELECTRIC POWER CONVERTER - An electric power converter includes a DC to DC converter section adjusting DC power of a battery with at least two units in series, a DC circuit having at least two DC link capacitors in series between a positive and a negative line from the DC to DC converter section, an electric power converter section connected to the DC circuit to convert DC electric power to AC electric power for a motor, a bilateral switching circuit connecting an intermediate potential point between the capacitors and an AC output point in the electric power converter section, and a short-circuit between the intermediate potential point of the DC circuit and an intermediate potential point between the battery units. Normal operation of a load is ensured even when the battery, the capacitor in the DC circuit or the switching device in the electric power converter section becomes abnormal, while achieving high efficiency. | 01-20-2011 |
20110012195 | SEMICONDUCTOR DEVICE - Between a source electrode ( | 01-20-2011 |
20110011658 | LOAD DRIVING SYSTEM AND ELECTRIC VEHICLE USING THE SYSTEM - A motor driving system with a pair of units connected in series to form a DC power supply with an intermediate potential connection point, positive and negative electrode lines connected to the positive and negative sides of the power supply through positive and negative electrode side switching circuits, an intermediate potential line with one end connected to the intermediate potential point, a DC to DC converter unit having two switching devices connected in series between the positive and negative electrode lines, a DC link circuit connected in parallel to the DC to DC converter unit between the positive and negative electrode lines, and a DC to AC converter unit driving an AC motor, the other end of the intermediate potential line connected to the connection point between the switching devices with a reactor in the intermediate potential line or in each of the positive and negative electrode lines. | 01-20-2011 |
20110006403 | SEMICONDUCTOR DEVICE AND THE METHOD FOR MANUFACTURING THE SAME - A semiconductor device is disclosed which includes active section | 01-13-2011 |
20100330398 | Semiconductor device, battery protection circuit and battery pack - A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced. | 12-30-2010 |
20100326984 | INDUCTION HEATING APPARATUS AND INDUCTION HEATING METHOD - There is provided an induction heating apparatus which continuously heats a steel plate using a solenoid system. The induction heating apparatus ( | 12-30-2010 |
20100323499 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is disclosed in which, after semiconductor function regions and patterns of interlayer insulating films including required contact holes are formed on one main surface side of a semiconductor substrate, an aluminum film or an aluminum alloy film which is thick is formed all over the main surface side of the semiconductor substrate and brought into conductive contact with the surface of the semiconductor substrate including bottom surfaces of the contact holes so as to form a required electrode film. Formation of the aluminum film or the aluminum alloy film is divided into a plurality of steps so that the thickness of the aluminum film or the aluminum alloy film is formed gradually, and between every two of the plurality of steps of forming the aluminum film or the aluminum alloy film, there is provided a step of performing isotropic etching to flatten irregularities in a surface of the aluminum film or the aluminum alloy film formed in the previous step. The method for manufacturing a semiconductor device prevents the formation of voids in the surface of an Al electrode film on the surface side of a semiconductor substrate. | 12-23-2010 |
20100321092 | SEMICONDUCTOR DEVICE - An IGBT is disclosed which separated into two groups (first and second IGBT portioZenerns). First and second Zener diodes each composed of series-connected Zener diode parts are disposed so as to correspond to the groups respectively. Each of the first and second Zener diodes has an anode side connected to a corresponding one of first and second polysilicon gate wirings, and a cathode side connected to an emitter electrode. Temperature dependence of a forward voltage drop of each of first and second Zener diodes is used for reducing a gate voltage of a group rising in temperature to throttle a current flowing in the group and reduce the temperature of the group to thereby attain equalization of the temperature distribution in a surface of a chip. In this manner, it is possible to provide an MOS type semiconductor device in which equalization of the temperature distribution in a surface of a chip or among chips can be attained. | 12-23-2010 |
20100314710 | HIGH-VOLTAGE SEMICONDUCTOR DEVICE - Aspects of the present invention provide a high-voltage semiconductor device and a high voltage integrated circuit device while minimizing or eliminating the need for the addition of back surface steps. Aspects of the invention provide a high-voltage semiconductor device that achieves, low voltage driving and quick response by way of stable high voltage wiring and a low ON voltage. In some aspects of the invention, a high-voltage semiconductor device can include a semiconductor layer is formed on a support substrate interposing an embedded oxide film therebetween. A high potential side second stage transistor and a low potential side first stage transistor surrounding the second stage transistor are formed on the surface region of the semiconductor layer. The source electrode of the second stage transistor is connected to the drain electrode of the first stage transistor. A drain electrode of the second stage transistor is connected to a drain pad. | 12-16-2010 |
20100309589 | Inverter device - The inverter device includes an IGBT bridge circuit, a drive block which has an upper arm photocoupler and a lower arm photocoupler, and a control block including a CPU which generates gate signals and supplies them to the photocouplers . The control block includes an upper arm shutdown circuit and lower arm shutdown circuit which individually shutdown the gate signals of the upper arm and lower arm IGBTs in accordance with shutdown signals input from the exterior, and the shutdown circuits carry out a shutdown operation in accordance with the shutdown signals, which have mutually inverted logics. | 12-09-2010 |
20100295187 | Semiconductor device and method for fabricating the same - A semiconductor device which can prevent a deterioration in the electrical properties by preventing sputters generated by laser welding from adhering to a circuit pattern or a semiconductor chip and a method for fabricating such a semiconductor device are provided. A connection conductor is bonded to a copper foil formed over a ceramic by a solder and resin is injected to a level lower than a top of the connection conductor. Laser welding is then performed. After that, resin is injected. This prevents sputters generated by the laser welding from adhering to a circuit pattern or a semiconductor chip. As a result, a deterioration in the electrical properties can be prevented. | 11-25-2010 |
20100289562 | Gate drive device - A gate drive device which can suppress the fluctuation of an internal power source voltage and output voltage, while reducing the number of parts by omitting a bypass capacitor connected in parallel with a semiconductor integrated circuit, is provided. The gate drive device drives the gate of an active element with a large input capacity, such as an IGBT or MOSFET, and includes a semiconductor integrated circuit. The semiconductor integrated circuit has an internal power source based on an external power source, such as a battery. The semiconductor integrated circuit incorporates a voltage drop suppressing circuit, configured so that, if an input external power source voltage momentarily drops below a minimum operating voltage, a drop of an internal power source voltage below the minimum operating voltage, and a sharp drop in a voltage output to the gate, are prevented by the voltage drop suppressing circuit. | 11-18-2010 |
20100285647 | INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulated gate silicon carbide semiconductor device is provided having small on-resistance in a structure obtained by combining the SIT and MOSFET structures having normally-off operation. The device includes an n | 11-11-2010 |
20100271852 | Power conversion circuit - A power conversion circuit converting DC electric power into AC electric power and sending the AC power to an inductive load, includes a first switching device connected to the positive pole side of the DC power supply to exhibit a conductive state and an interrupted state of a current; a second switching device connected to the negative pole side of the DC power supply to exhibit a conductive state and an interrupted state of the current; a first inductor provided between the first switching device and the inductive load; a second inductor provided between the second switching device and the inductive load; and a clamping diode connected between a first connection point between the first switching device and the first inductor, and a second connection point between the second switching device and the second inductor. Thus, conduction is provided from the second connection point to the first connection point. | 10-28-2010 |
20100270989 | Switching power supply - A switching power supply that can suppress output variation at a time of transition of a control mode from a non-linear control mode to a linear control mode. The switching power supply includes instruction value forming circuitry that forms, in a linear control mode, a linear control instruction value for linearly control a switching circuit based on an error of an output voltage, and forms, in a non-linear control mode, a non-linear control instruction value for non-linearly control the switching circuit. The instruction value forming circuitry predicts, in the non-linear control mode, a linear control instruction value suited to the load current in the non-linear control mode, and uses the predicted linear control instruction value for an initial value of the linear control instruction value at a time of transition from the non-linear control mode to the linear control mode. | 10-28-2010 |
20100270586 | WIDE BAND GAP SEMICONDUCTOR DEVICE - A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a WBG semiconductor as a switching element of an inverter circuit. In the semiconductor device for application to a switching element of an inverter circuit, a band gap of a semiconductor material is wider than that of silicon, a circuit that limits a current when a main transistor is short circuited is provided, and the main transistor that mainly serves to pass a current, a sensing transistor that is connected in parallel to the main transistor and detects a microcurrent proportional to a current flowing in the main transistor, and a lateral MOSFET that controls a gate of the main transistor on the basis of an output of the sensing transistor are formed on the same semiconductor. | 10-28-2010 |
20100264491 | HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE AND HIGH VOLTAGE INTEGRATED CIRCUIT - A high breakdown voltage semiconductor device, in which a semiconductor layer is formed on a semiconductor substrate across a dielectric layer, includes a drain layer on the semiconductor layer, a buffer layer formed so as to envelop the drain layer, a source layer, separated from the drain layer, and formed so as to surround a periphery thereof, a well layer formed so as to envelop the source layer, and a gate electrode formed across a gate insulating film on the semiconductor layer, wherein the planar shape of the drain layer | 10-21-2010 |
20100264317 | ARTICLE CARRYING-OUT MONITOR - A monitor part performs monitoring by detecting contamination on a lower surface of an article to be inspected based on a lower surface detection signal, detecting contamination on an upper surface of the article based on an upper surface detection signal, detecting contamination on a front surface of the article based on a front, lower surface detection signal and a front, upper surface detection signal, detecting contamination on a rear surface of the article based on a rear, lower surface detection signal and a rear, upper surface detection signal, detecting contamination on a left surface of the article based on a left, lower surface detection signal and a left, upper surface detection signal, and detecting contamination on a right surface of the article based on a right, lower surface detection signal and a right, upper surface detection signal. | 10-21-2010 |
20100253312 | COMBINED SEMICONDUCTOR RECTIFYING DEVICE AND THE ELECTRIC POWER CONVERTER USING THE SAME - A combined semiconductor rectifying device includes PN-junction silicon diode and Schottky barrier diode exhibiting a breakdown voltage higher than the breakdown voltage of PN-junction silicon diode, and Schottky barrier diode is made of a semiconductor, the band gap thereof is wider than the band gap of silicon. The combined semiconductor rectifying device exhibits a shortened reverse recovery time, low reverse leakage current characteristics and a high breakdown voltage, and is used advantageously in an electric power converter. | 10-07-2010 |
20100247301 | Power converting device - A power converting device includes a main body having a heat producing part housed therein, a fan case having a cooling fan therein for cooling the heat producing part provided in the main body, and a housing portion in the main body which houses the fan case. The fan case and the housing portion are interconnected so that the fan case is pivotally attached to and detached from the housing portion. | 09-30-2010 |
20100246227 | Switching power supply - A switching power supply has a full-wave AC rectifier circuit; a chopper circuit including an inductor, a capacitor smoothing current from the inductor, and a switching device for on-off control of the current fed to the capacitor. The rectifier circuit further has an input voltage detector circuit detecting chopper circuit input voltage; an output voltage error detector circuit detecting an error between an output voltage from the chopper circuit and a set voltage; a current control signal generator circuit generating a current control signal in-phase with an input voltage detection signal having a waveform similar to the input voltage detection signal and an amplitude proportional to an output voltage error signal; a current detector circuit detecting inductor current flow; a frequency setting circuit; an oscillator circuit; and a switching control circuit switching the switching device based on oscillation circuit signal, the current control signal, and the current detection signal. | 09-30-2010 |
20100245008 | ENTIRELY INTEGRATED EMI FILTER BASED ON A FLEXIBLE MULTI-LAYER STRIP MATERIAL - An entirely integrated EMI filter is based on a flexible multi-layer strip material. An EE or EI core comprises two side pillars and one middle pillar and forms a closed magnetic circuit. The middle pillar has an air gap. A first winding and a second winding respectively are wound around the two side pillars in a same winding direction. The middle pillar is wound with a third winding and a fourth winding, or with only a fifth winding. Passive components (e.g., all passive components) of the EMI filter are integrated into one core so that in its differential mode, insertion loss is significantly reduced, the size and volume are reduced, and the distribution constant of the EMI filter has less impact on the filter's performance. | 09-30-2010 |
20100240213 | Method of manufacturing a semiconductor device - A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process. | 09-23-2010 |
20100224886 | P-CHANNEL SILICON CARBIDE MOSFET - A second trench in each source electrode portion (Schottky diode portion) is formed to have a depth equal to or larger than the depth of a first trench in each gate electrode portion. The distance between the first and second trenches is set to be not longer than 10 μm. A source electrode is formed in the second trench and a Schottky junction is formed in the bottom portion of the second trench. In this manner, it is possible to provide a wide band gap semiconductor device which is small-sized, which has low on-resistance and low loss characteristic, in which electric field concentration into a gate insulating film is relaxed to suppress reduction of a withstand voltage, and which has high avalanche breakdown tolerance at turn-off time. | 09-09-2010 |
20100220500 | POWER CONVERTER AND METHOD FOR CONTROLLING POWER CONVERTER - The invention prevents the voltage change ratio of switching devices of a power converter from exceeding a specified maximum rating, thus avoiding damage in switching devices and an increase in conduction loss. In a power converter having a plurality of switching devices, switching means for switching a control scheme for the switching devices to a phase shift control scheme or a pulse width modulation scheme is provided, whereby the control scheme for the switching devices is switched from the phase shift control scheme to the pulse width modulation scheme in a non-load or light-load state. | 09-02-2010 |
20100212229 | Movable body driving device - A movable body driving device includes upper and lower racks movable in a lengthwise direction; a motor which can rotate forward and backward; a drive pinion fixed to a rotary shaft of the motor; and a driven pinion engaging the upper and lower racks to move linearly by the drive pinion. The driven pinion is driven to rotate by the upper or lower rack to thereby drive the lower or upper rack linearly in a direction reverse to the other rack. A sliding door is connected to the upper or lower rack and is opened or closed in accordance with forward or backward rotation of the motor. The drive pinion transmits its driving force while the rack to which the driving force is transmitted is changed from the upper rack to the lower rack or from the lower rack to the upper rack. | 08-26-2010 |
20100207162 | VERTICAL AND TRENCH TYPE INSULATED GATE MOS SEMICONDUCTOR DEVICE - A vertical and trench type insulated gate MOS semiconductor device is provided in which the surfaces of p-type channel regions and the surfaces of portions of an n-type semiconductor substrate alternate in the longitudinal direction of the trench between the trenches arranged in parallel, and an n | 08-19-2010 |
20100201333 | SWITCHING POWER SUPPLY - A switching power supply is a buck DC-DC converter that includes a plurality of inductors and switching devices that control the connection relations of the inductors, the ON and OFF of the switching devices are controlled such that the inductors are connected in series to each other while the switching devices are ON and such that the inductors are connected in parallel to each other while the switching devices are OFF for obtaining a low output voltage easily. The ON and OFF of the switching devices are controlled such that some of the inductors are disconnected for realizing a DC-DC converter that exhibits different performance. The switching power supply according to the invention facilitates preventing the circuit scale from being enlarged, preventing especially the number of large-capacity capacitors from increasing and obtaining a low output voltage. | 08-12-2010 |
20100197127 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is disclosed, wherein a plating layer is formed on a first surface side of a semiconductor substrate stably and at a low cost, while preventing the plating liquid from being contaminated and avoiding deposition of uneven plating layer on a second surface side. An electrode is formed on the first surface of the semiconductor substrate, and another electrode is formed on the second surface. A curing resin is applied on the electrode on the second surface and a film is stuck on the curing resin, and the curing resin is then cured. After that, a plating process is conducted on the first surface. The film and the curing resin are then peeled off. | 08-05-2010 |
20100194298 | LED DRIVE DEVICE, LED DRIVE METHOD AND LIGHTING SYSTEM - A drive circuit drives LED groups each of which has a plurality of LEDs connected in series. The drive circuit includes nMOSFETs which drive the LED groups, current regulating circuits which determine drain currents of the nMOSFETs, and subtracters which control the current regulating circuits to keep the sum of the current values of adjacent two nMOSFETs constant. The LEDs can be switched on/off efficiently even when there are differences between forward voltages of the LEDs. | 08-05-2010 |
20100188177 | Sliding door opening/closing device for vehicle - The present invention provides a sliding door opening/closing device for a vehicle that applies a sufficient opening/closing drive force to the left and right sliding doors and reduces a force necessary to lock and unlock the latch, despite a simple configuration of the device, and that facilitates the manufacturing process, improves operability and safety, and reduces noise. A lock device, against both sides of which locking portions abut, rotates a columnar permanent magnet so as to form magnetic locking circuits and fixes the locking portions by magnetic forces of the locking magnetic circuits. The rotational operation of the columnar permanent magnet is converted into the downward operation of a latch, and the lowered latch restrains the locking portions with respect to the lock device. | 07-29-2010 |
20100187543 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND THE SILICON CARBIDE SEMICONDUCTOR DEVICE - Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof. | 07-29-2010 |
20100173476 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the invention irradiates a first pulse laser beam with an irradiation energy density of 1.0 J/cm | 07-08-2010 |
20100172157 | SWITCHING POWER SUPPLY DEVICE AND SWITCHING POWER SUPPLY CONTROL CIRCUIT - The invention provides a switching power supply device which can detect a light load state on a pulse-by-pulse basis without worsening power efficiency. In a synchronous control circuit, for each timing of the turning-on of main switching elements, the delay time Tdif of the conduction timing of internal diodes Ds determined according to the magnitude of the load LD is detected by a comparator, a reference time pulse Tsrs having a prescribed time width is generated by a load judgment circuit, and the logical product of the two is generated by an AND circuit. By this means, the load is regarded as being a light load when the delay time Tdif is longer than the reference time pulse Tsrs, and the synchronous rectification MOSFETs Qs are not turned on. | 07-08-2010 |
20100172091 | Cooling apparatus for semiconductor chips - A cooling apparatus for semiconductor chips includes radiation fins formed on the opposite surface of metal base opposite to the surface of metal base, to which an insulator base board mounting semiconductor chips thereon, is disposed. The radiation fins, such as sheet-shaped fins having different lengths are arranged such that the surface area density of the fins becomes higher in the coolant flow direction, whereby the surface area density is the total surface area of radiation fins on a unit surface area of the metal base. As a result, the temperatures of semiconductor chips arranged along the coolant flow direction are closer to each other. | 07-08-2010 |
20100165683 | Switching power supply circuit - A switching power supply circuit that obtains a predetermined DC voltage output from an input AC power supply includes a full-wave rectifier and a boost circuit connected to the rectifier. The boost circuit generates a DC output having a predetermined voltage value from the rectifier output. A power factor improving circuit controls an ON-period of an output transistor of the boost circuit, based on feedback of the DC voltage output, and a dynamic over-voltage-protection circuit controls the ON-period of the output transistor as it performs a switching operation. The switching power supply circuit facilitates an over-voltage-protection function that prevents inductor buzzing with an integrated circuit having a small number of pins. | 07-01-2010 |
20100142229 | Switching power source device and switching power source control circuit - A switching power source device which has main switch elements which switch a current path of the series resonant circuit, and a transformer which induces a current to a secondary side, controls the main switch elements on a primary side. Synchronous rectification switch elements are turned ON and OFF in response to one of the main switch elements. A synchronous control circuit which turns the synchronous rectification switch element ON in synchronization with an ON timing of the main switch element, or a conduction timing of internal diodes in the synchronous rectification switch elements detected by an inter-terminal voltage signal of the synchronous rectification switch element, whichever timing is later, determines a maximum ON width of the synchronous rectification switch element in accordance with a delay time of the conduction timing of the internal diodes with respect to the ON timing of the main switch element. | 06-10-2010 |
20100135050 | SWITCHING POWER SUPPLY CONTROL CIRCUIT - A comparator detects whether a feedback signal of an output voltage detecting circuit for a switching power supply circuit reaches a control voltage. A comparator detects an operating state of the switching power supply circuit, which is instructed by a switching instruction signal, by comparing the instruction signal with a reference voltage. The comparators are connected to a decision circuit which outputs to a control circuit a signal instructing a normal state until the feedback signal reaches the control voltage, and thereafter a signal instructing a normal state or a stand-by state that is instructed by the switching instruction signal. Thus, the control circuit makes the switching power supply circuit operate in a normal state until the output voltage reaches the control voltage. After the output voltage reaches the control voltage, the switching power supply circuit operated in an operation state instructed by the switching instruction signal to enable stable startup. | 06-03-2010 |
20100111134 | COOLING CAPACITY MEASUREMENT METHOD FOR INVERTER DEVICE - An inverter device is provided that can measure a decrease in cooling capacity caused by a finite service life of a cooling fan or clogging of a cooling fin, without being affected by an ambient temperature or a load state. A thermal time constant is calculated in a thermal time constant calculation circuit from a temperature detection value from a temperature detection circuit and a time signal from a timer on the basis of an operation/stop command for the inverter device. The calculated value of the thermal time constant calculated in the thermal time constant calculation circuit is compared by a comparator with a reference value of the thermal time constant that is stored in advance in a memory. Whether the cooling capacity has decreased is determined based on the comparison results. | 05-06-2010 |
20100110739 | Control system of a power factor correction circuit - A control system for a power factor correction circuit performs stabilized oscillation operation and suppresses switching frequency variation due to change of the AC power source. A control system includes a voltage error amplifier for outputting a voltage error signal obtained by amplifying a difference between a DC output voltage Vo and a command value Vref of the DC output voltage, a current command value generating circuit for outputting a current command value Vi for controlling the input current Iin, a comparator comparing an inductor current signal obtained by detecting an inductor current running in the switching element by a current detecting resistor with a magnitude of the output signal Vi from the multiplier, a timer circuit for setting an off-period of the switching element corresponding to the voltage Vd, and a reset-set type flip-flop circuit for setting an off-timing of the switching element after an elapse of the off-period. | 05-06-2010 |
20100110738 | Switching power supply apparatus - In a switching power supply apparatus, multiplier | 05-06-2010 |
20100109587 | AC motor driving circuit and electric car driving circuit - In an AC motor driving circuit from an AC power supply and a DC power supply, a matrix converter and a power conversion circuit are provided. The matrix converter is connected between an output of the AC power supply and an input of the AC motor. In the power conversion circuit, switches back-to-back connected to diodes, and bidirectional switches are series-connected, respectively. Connection junctions between the switches and the bidirectional switches are connected to the input phases of the AC motor, respectively. The other terminal of each switch is connected to one terminal of the DC power supply while the other terminal of each bidirectional switch is connected to the other terminal of the DC power supply. In this manner, the number of switches through which electric power passes at the time of operation is reduced so that loss can be reduced. Accordingly, power conversion efficiency can be improved. | 05-06-2010 |
20100109585 | AC motor driving circuit and electric car driving circuit - In an AC motor driving circuit, a current-type rectifier circuit having a filter circuit and first bidirectional switches bridge-connected to the filter circuit is provided in an output of an AC power supply. An AC motor is connected to an output of the rectifier circuit through a voltage-type inverter. One terminal of each of second bidirectional switches is connected to corresponding one of output terminals of the current-type rectifier circuit. The other terminals of the second bidirectional switches are collectively connected to one terminal of a series circuit having a DC power supply and a reactor. The other terminal of the series circuit is connected to one output terminal of the current-type rectifier circuit. With this configuration, a large capacitor for a DC link can be dispensed with, so that a reduction in circuit size and weight can be attained. | 05-06-2010 |
20100097828 | Interleave control power supply device and control circuit and control method for the power supply device - A two-phase critical interleave PFC boost converter, includes a master-side control circuit configured to critically control a first switching element based on a master signal; and a slave-side control circuit configured to critically control a second switching element based on a slave-signal with a phase difference of 180° from the master signal. In the PFC boost converter, an off period generator of the master-side control circuit feeds an M_ON signal which is the same in waveform as the master signal to an on phase controller of the slave-side control circuit, and the slave-side control circuit determines the rising timing of the slave signal from the rising time of the master signal. | 04-22-2010 |
20100097146 | Signal amplification circuit - This invention provides a low-current consumption type signal amplification circuit, which limits the output voltage to fix a lower-limit (upper-limit) saturation voltage of the amplification circuit at a predetermined lower-limit (upper-limit) limiting voltage. The signal amplification circuit comprises a negative feedback amplification circuit, a lower-limit voltage limiting circuit and an upper-limit voltage limiting circuit. The lower-limit voltage limiting circuit increases a resistance between an output terminal of the negative feedback amplification circuit and a ground terminal when the output voltage of the negative feedback amplification circuit falls below the lower-limit limiting voltage. The upper-limit voltage limiting circuit increases a resistance between the output terminal of the negative feedback amplification circuit and a high-potential side of a power supply when the output voltage of the negative feedback amplification circuit rises above the upper-limit limiting voltage. | 04-22-2010 |
20100052594 | MACHINE CONTROL DEVICE - A machine control device has a position regulator configured to enable modification of the proportional gain during regulation operations, and has proportional gain setting unit, which sends an instruction to modify the proportional gain to the position regulator based on a position instruction value which is an output of a position instruction unit. In the proportional gain setting unit, when the movement velocity based on the position instruction value from the position instruction unit decreases, that is, when the position instruction value is a value at which the movement distance is short, the proportional gain of the position regulator is set high, and when the movement velocity based on the position instruction value increases, that is, when the position instruction value is a value at which the movement distance is long, the proportional gain is set low. | 03-04-2010 |
20100050526 | CONTROL DEVICE FOR ELECTRICALLY DRIVEN DOOR - A control device for an electrically driven door is provided that can enhance the sensitivity of detection of a door pinch state and that can prevent a passenger from being pressed when the door pinch state occurs. The control device includes a driving force instruction value producing unit that outputs a driving force instruction value of the electrically driven door, a state observing unit that estimates a mechanical resistant force to a door driving system, a reference model that determines a dynamic characteristic of the electrically driven door to the mechanical resistant force estimated by the state observing unit, a gain compensator that computes a control compensation value that makes an output of the reference model coincide with an actual speed of the electrically driven door; and an adder that adds the control compensation value computed by the gain compensator to the driving force instruction value outputted by the driving force instruction value producing unit. | 03-04-2010 |
20100039843 | Semiconductor module for use in power supply - A series connection circuit of IGBTs and an AC switch are contained in one package. The series connection circuit is connected between the positive and negative terminals of a DC power source, and the AC switch is connected between a neutral point of the DC power source and a series connection point between the IGBTs. Straight conductor strips can be used to connect terminals on the package to the DC power source, thereby reducing inductance and thus also reducing voltage spikes. | 02-18-2010 |
20090266185 | MOVABLE BODY DRIVING APPARATUS - A door driving apparatus having a motor, a sleeve formed at a drive end of a rotor of the motor, a pinion integrally fixed to a rotation shaft integrated with a spline shaft detachably fitted to the sleeve, and left and right racks disposed opposite to each other with respect to the pinion and engaged with the pinion so that the left and right racks can move in directions substantially parallel and opposite to each other. When the motor is individually removed from a rack and pinion casing, the pinion is left in the pinion and rack casing while upper and lower sides of the pinion are engaged with the right and left racks, respectively. Accordingly, the relative positions of the left and right racks are unchanged. | 10-29-2009 |
20090170708 | SUPERCONDUCTING WIRE AND SUPERCONDUCTING COIL MADE THEREWITH - Tape-shaped superconducting wires, and a superconducting coil formed from said wires, wherein a plurality of electrically separated superconducting film parts, each having a rectangular cross section and arranged in parallel, form parallel conductors, providing superconducting wires capable of containing losses incurred in the presence of alternating current (A/C). A superconducting coil is made by winding the superconducting wires, wherein the coil structure contains at least a part wherein perpendicular interlinkage magnetic fluxes acting among conductor elements of the parallel conductors by the distribution of magnetic fields generated by the superconducting coils cancel mutually in order to contain circulating current within the wires and to make shunt current uniform, thereby providing a low-loss A/C superconducting coil. | 07-02-2009 |
20090128258 | EMI filter with an integrated structure of common-mode inductors and differential-mode capacitors realized by flexible printed circuit board - An integrated structure of common-mode inductors and differential-mode capacitors in an EMI filter realized using a flexible circuit board, including: a closed magnetic circuit formed by a first magnetic core and a second magnetic core, optionally including an air gap formed in a middle pillar of the magnetic cores, and with a flexible printed circuit board (FPC) wound on at least one pillar, the FPC formed by laminating alternating insulating and copper foil layers. The integrated structure of inductors and capacitors is advantageous in reducing the volume of the EMI filter and improving the power density of an electronic power transformer. | 05-21-2009 |
20090101569 | SLUDGE FILTRATION APPARATUS AND FILTER ASSEMBLY THEREOF - A sludge filtration apparatus has a sludge tank configured to store sludge and at least one filter assembly. The filter assembly includes a filtration membrane for filtering the sludge and a pipe insertable in the filtration membrane to supply air to a secondary side of the filtration membrane for dislodging the sludge from the filtration membrane. The pipe has a plurality of holes for discharging gas, namely air, to an area in which the filtration membrane inclines downwardly with the secondary side thereof. The sludge filtration apparatus can prevent thickened sludge from remaining in an upper portion of the filter assembly. | 04-23-2009 |
20080258665 | Door drive control apparatus and door drive control method - A door drive control apparatus capable of an accurate detection, without misidentifying an inverse overrun condition, and a door drive control method that improves safety. The door drive control apparatus includes a power converter that supplies power to a door drive linear motor, and operates the power converter by feedback control using a speed detection value and a speed command value of the door, and controls a speed of the door. The door drive control apparatus includes a speed trouble determiner, which outputs a door inverse direction speed trouble signal in the event that the speed command value of the door exceeds either a positive or negative first setting speed, and the speed detection value exceeds a second setting speed of a polarity opposite to that of the speed command value. | 10-23-2008 |
20080224809 | MAGNETIC INTEGRATION STRUCTURE - A magnetic part having a first iron core wound with a winding constituting a transformer and an inductance component of a parallel coil and a second iron core wound with an inductance component of a series coil, in which a ratio of the dimensions of the first iron core and the second iron core are in accordance with their respective winding densities. | 09-18-2008 |
20080203829 | VIBRATING-TYPE MOTOR - A vibrating-type motor is provided, in which only a restoring force is reduced without reducing a thrust increasing effect by auxiliary magnets, thereby reducing size while increasing efficiency. Specifically, a vibrating-type motor is provided that includes a moving part having a main magnet and auxiliary magnets individually junctioned coaxially to axial end portions of the main magnet at junction locations, an exciting yoke including two leg portions opposed to the moving part through a gap, and arranged with respect to the moving part such that a first distance between central portions of faces of the two leg portions that are closest to the moving part is different from a second distance between the junction locations, an exciting coil wound on the exciting yoke for generating a magnetic flux in the leg portions, and a back yoke arranged to confront the exciting yoke with the moving part located between the back yoke and the exciting yoke, wherein the axial end portions of the moving part are substantially coincident with outer-side end portions of the faces of the leg portions. | 08-28-2008 |
20080197720 | VIBRATING-TYPE MOTOR - A vibrating-type motor is provided, in which a restoring force is reduced without reducing a thrust increasing effect by auxiliary magnets, thereby to reduce the size and expense of the motor while increasing efficiency. The vibrating-type motor includes a moving part having a main magnet and auxiliary magnets individually junctioned coaxially to two axial end portions of the main magnet, an exciting yoke including two leg portions opposed to the moving part through a gap and arranged coaxially with the moving part, an exciting coil wound on the exciting yoke for generating a magnetic flux in the leg portions, and a back yoke arranged to confront the exciting yoke with the moving part located between the back yoke and the exciting yoke, wherein outer-side end portions of the exciting yoke extend past axial end portions of the back yoke. | 08-21-2008 |