Fuji Electric Device Technology Co., Ltd Patent applications |
Patent application number | Title | Published |
20120286326 | POWER SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME - A power semiconductor device that realizes high-speed turnoff and soft switching at the same time has an n-type main semiconductor layer that includes lightly doped n-type semiconductor layers and extremely lightly doped n-type semiconductor layers arranged alternately and repeatedly between a p-type channel layer and an n | 11-15-2012 |
20120244697 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved. | 09-27-2012 |
20120193749 | SEMICONDUCTOR DEVICE - In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region. | 08-02-2012 |
20120045663 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING MEDIUM MANUFACTURED USING THE SAME - A method of manufacturing a magnetic recording medium with high recording density and enabling stable flight of a magnetic head, with high manufacturing yields, is provided. The method includes layering a magnetic layer, a protective layer, and a lubricating layer in order on a substrate, and forming a medium for transfer. The method further includes transferring a magnetic pattern to the medium for transfer, and flattening a surface of the lubricating layer of the medium for transfer for which the magnetic pattern transferring is completed. The surface of the lubricating layer is flattened either by wiping the surface of the lubricating layer using a member without a cutting effect, or by heating the surface of the lubricating layer. | 02-23-2012 |
20120021254 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular magnetic recording medium is disclosed which is capable of reducing the orientational dispersion and crystal grain size of a magnetic recording layer, simultaneously reducing the thickness of a non-magnetic intermediate layer, hence, reducing noise, and improving S/N ratio and recording density characteristics. The medium includes a non-magnetic substrate, soft magnetic underlayer, seed layer, first non-magnetic intermediate layer, second non-magnetic intermediate layer, granular magnetic recording layer, exchange coupling force control layer, non-granular magnetic recording layer, protective layer, and lubricant layer sequentially formed on the non-magnetic substrate. The first and second non-magnetic intermediate layers are laminated to form a two-layer non-magnetic intermediate layer and the seed layer is made of a material having an fcc structure. | 01-26-2012 |
20120009441 | METHOD OF MANUFACTURING PERPENDICULAR MAGNETIC RECORDING MEDIUM SUBSTRATE AND PERPENDICULAR MAGNETIC RECORDING MEDIUM SUBSTRATE MANUFACTURED BY THE SAME - A method of manufacturing a perpendicular magnetic recording medium substrate is capable of reducing the waviness of all wavelength components and a recording medium is capable of reducing contact with a magnetic head to improve the flying stability of the magnetic head. The method includes two polishing operations. The first operation includes polishing a substrate having a Ni—P-based alloy underlayer with a first porous material that includes 0.1 wt % to 25 wt % of alumina, titania, silica, and zirconia abrasive while supplying a first slurry liquid including an organic or inorganic acid and a first abrasive to the underlayer of the substrate. The second operation includes polishing a surface of the underlayer polished in the first polishing with a second porous material while supplying a second slurry liquid including an organic or inorganic acid and a second abrasive with a grain diameter smaller than that of the first abrasive. | 01-12-2012 |
20120008224 | MAGNETIC TRANSFER MASTER SUBSTRATE, MAGNETIC TRANSFER METHOD USING THE SUBSTRATE, AND MAGNETIC TRANSFER MEDIUM - A magnetic transfer master substrate includes a non-magnetic base having depressed portions formed on a surface thereof corresponding to an information signal array, a ferromagnetic body formed in the depressed portions and having a top portion thereof protruding above the surface of the non-magnetic base, and a non-magnetic protective film covering the surface of the non-magnetic base, except for the depressed portion thereof, and also covering a side portion of the ferromagnetic body. A section through the ferromagnetic body, taken perpendicularly to the substrate, includes a round corner, a curvature of which has a radius of no less than 1 nm and no more than 10 nm. The apex of the top portion of the ferromagnetic body protrudes above the surface of the non-magnetic base by 2 nm or more, and protrudes above the surface of the non-magnetic protective film by a distance less than the radius of the curvature. | 01-12-2012 |
20110317300 | MAGNETIC TRANSFER MASTER SUBSTRATE, MAGNETIC TRANSFER METHOD AND METHOD OF MANUFACTURING THE SUBSTRATE - A magnetic transfer master substrate may have a ferromagnet pattern corresponding to a signal array. The substrate may include a non-magnetic base having depressed portions, formed on a surface thereof, which correspond to the signal array. A ferromagnet may be disposed in the depressed portions and includes a portion protruding above said surface. A section through the portion of the ferromagnet protruding from said surface taken perpendicularly to a surface of the substrate, includes a curved corner, a radius of curvature of which is no less than 2 nm and no more than 10 nm. The ferromagnet protrudes from the surface of the base by a distance no less than 2 nm and no more than 15 nm. A magnetic transfer method may include bringing the master substrate and a magnetic recording medium into contact and applying a magnetic field to record a magnetization pattern. | 12-29-2011 |
20110286124 | MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - In a magnetic recording medium and magnetic recording medium manufacturing method, it is possible to easily separate a conjoined body without carrying out shape processing in a transfer master in order to separate a conjoined body, and without scratching the magnetic recording medium in a separating step. Moreover, it is possible to mass-produce the magnetic recording medium efficiently without increasing the size of a device. As the central portion of a transfer master is caused to bow convexly in an upward direction, in a condition in which a press receiving surface portion of the transfer master is restrained by a pressing surface of a pressing member, the outer periphery of a magnetic recording medium in a conjoined body is easily separated from a transfer receiving medium contact region of the transfer master in such a way that a predetermined gap is formed. | 11-24-2011 |
20110244269 | Perpendicular magnetic recording medium - A perpendicular magnetic recording medium includes at least a soft-magnetic underlayer, a non-magnetic underlayer, a ferromagnetic intermediate layer, a non-magnetic intermediate layer, and a perpendicular magnetic recording layer sequentially stacked on a non-magnetic substrate. In an embodiment, the ferromagnetic intermediate layer is formed of a CoCr based alloy, a product Bs·t of a saturation magnetic flux density and film thickness of the ferromagnetic intermediate layer is within a range of 0.15 to 3.6 T·nm, and the non-magnetic intermediate layer has a film thickness of 3 nm or more. | 10-06-2011 |
20110242693 | MAGNETIC RECORDING MEDIUM EVALUATION APPARATUS AND EVALUATION METHOD - This invention provides a magnetic recording medium evaluation apparatus and evaluation method which yield results having good correlation with error rate measurements even when comparing media with different structures. Signals from a function generator are recorded in a magnetic recording medium. The recording signals are also passed through a first digital filter to obtain ideal restored signals. Reproduced signals from the magnetic recording medium are sampled in synchronization with the output from the function generator, and the discrete signals are passed through a second digital filter to obtain restored signals. The outputs from the first and second digital filters are input to an operational amplifier, and the difference between the restored signals and the ideal restored signals is taken for each sampling of the recording signals. The signal-to-noise ratio of the ideal restored signal to the average of the absolute value of this difference is used to evaluate signal quality. | 10-06-2011 |
20110242690 | MAGNETIC TRANSFER METHOD AND MAGNETIC TRANSFER DEVICE - A system and method for magnetic transfer. A magnetic transfer device includes a plurality of pairs of magnetic field generating units that apply a magnetic field to a contact body which includes a master disk in close contact with a magnetic recording medium, wherein the master disk has a pattern of preformatted signals. The magnetic field generating units, falling within a specified length range, are moved in synchrony at a predetermined speed in the directions of the outer periphery while the contact body is caused to rotate by a rotation drive unit. The system and method provide a magnetic transfer method and a magnetic transfer device that, by reducing the area of magnetic field generating units that apply a transfer magnetic field, can reduce an attractive force (or repulsive force) between the magnets, and furthermore, shorten a processing time for the transfer. | 10-06-2011 |
20110229657 | APPARATUS AND METHOD FOR FORMING CARBON PROTECTIVE LAYER - An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line. | 09-22-2011 |
20110222189 | Magnetic recording medium and method for producing the same - A patterned magnetic recording medium, accessible by a magnetic recording head, including a plurality of tracks, a width direction of each track and that of the magnetic recording head being of a skew angle. The patterned magnetic recording medium includes a plurality of magnetic dots, each corresponding to a recording bit, formed on a non-magnetic material. The plurality of magnetic dots are arranged in a plurality of arrays, each array corresponding to one of the tracks. Every N adjacent magnetic dots of the array define a polygon, one side thereof being parallel to the corresponding track, and another side thereof being parallel to a direction corresponding to the skew angle of the corresponding track. | 09-15-2011 |
20110220962 | SEMICONDUCTOR DEVICE HAVING INSULATED GATE SEMICONDUCTOR ELEMENT, AND INSULATED GATE BIPOLAR TRANSISTOR - A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer. | 09-15-2011 |
20110212270 | MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - A method of manufacturing a magnetic recording medium. The method includes altering magnetic characteristics of a magnetic recording layer at positions corresponding to concave portions of a mask layer by ion implantation or exposure to an activated halogen-containing reactive gas, via a mask layer on which a concavo-convex pattern is formed. The concavo-convex pattern is formed by forming a separating portion that magnetically separates magnetic portions of the magnetic recording layer in positions corresponding to convex portions of the mask layer. A resist material configuring the mask layer allows the shape of the concavo-convex pattern to vary after the formation of the concavo-convex pattern. A taper angle of a stepped portion marking the boundaries between the concave and convention portions of the concavo-convex pattern, when starting the alteration of magnetic characteristics of the magnetic recording layer, is between 66° and 88°. | 09-01-2011 |
20110205668 | MAGNETIC RECORDING MEDIUM AND MANUFACTURING METHOD THEREOF - A magnetic recording medium comprises a data region for recording data and a servo region that is disposed adjacent to the data region and has recorded information for controlling a magnetic head. The data region has a pattern of dots separated from each other by grooves or nonmagnetic material. The servo region lacks the pattern of dots, and includes magnetic information written in a flat region. The magnetic recording medium can be formed by a method that does not need a separate process of writing servo information. | 08-25-2011 |
20110200846 | METHOD OF MANUFACTURING A MAGNETIC RECORDING MEDIUM HAVING A DISCRETE TRACK STRUCTURE - A method of manufacturing a magnetic recording medium having a discrete track structure enables the discrete track structure to be fabricated in a simple method with good productivity while maintaining satisfactory accuracy of the discrete track structure and holding favorable magnetic separation performance between tracks. The method comprises steps of: forming an aluminum film on a nonmagnetic substrate; executing an anodizing process on the aluminum film to form an alumina layer including nano-holes in a self-organizing manner; forming a resist pattern exposing recording track regions; and depositing a magnetic material in the nano-holes in the recording track regions. The method can further comprise a step of forming recessed parts at positions of the nano-holes to be formed in the anodizing process. The method can further comprise a step of forming a first underlayer of titanium and a second underlayer of gold. | 08-18-2011 |
20110181975 | METHOD OF MANUFACTURING A MASTER DISK FOR MAGNETIC TRANSFER - A method of manufacturing a master disk for magnetic transfer is provided in which a pattern configuration does not change and burrs that require a polishing process are not generated. The method of manufacturing a master disk for magnetic transfer can include preparing a nonmagnetic body, forming a pattern of recessed parts on the nonmagnetic body, and forming a ferromagnetic material layer by depositing a ferromagnetic material on a surface of the nonmagnetic body having the pattern of recessed parts thereon. The method can further include forming a pattern of ferromagnetic material layers at the recessed parts by removing an excess portion of the ferromagnetic layer without using a mask. An etching rate of the nonmagnetic body can be larger than an etching rate of the ferromagnetic material layer in the operation of forming a pattern of ferromagnetic material layers at the recessed parts. | 07-28-2011 |
20110177360 | METHOD OF PRODUCING PERPENDICULAR MAGNETIC RECORDING MEDIUM - A method of producing a perpendicular magnetic recording medium with a magnetic recording layer formed from ferromagnetic crystal grains and oxide-including non-magnetic crystal grain boundaries and provided on a non-magnetic substrate. The method is initiated by forming the magnetic recording layer by a reactive sputtering method using rare gas containing 2% by volume to 10% by volume (both inclusively) of oxygen gas at an initial stage of film formation. The method continues by successively forming the magnetic recording layer by reactive sputtering while reducing the concentration of the oxygen gas. The method may further include forming an undercoat layer of Ru or a Ru-alloy under the magnetic recording layer. In this manner, a granular magnetic layer having high characteristic coercive force (Hc) can be formed, while reducing the amount of expensive Pt or Ru required. | 07-21-2011 |
20110163372 | SEMICONDUCTOR DEVICE - A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device. | 07-07-2011 |
20110157735 | METHOD OF MAGNETIC TRANSFER AND A MAGNETIC RECORDING MEDIUM - A method of magnetic transfer, including placing a first medium in contact with a second medium, pressing the first and second media together to form an adhered body, applying a magnetic field to the adhered body, and moving the magnetic field relatively to the adhered body, so as to transfer information from the first medium to the second medium. Then the monitoring of the adhered body is performed to detect existence of an air bubble between the first and second media. | 06-30-2011 |
20110121360 | METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH AN ALUMINUM OR ALUMINUM ALLOY ELECTRODE - A semiconductor device includes a silicon substrate having a first major surface and a second major surface opposite to the first major surface, a drift layer and a collector layer formed in sequence in the silicon substrate from the first major surface, and an aluminum silicon film formed on the second major surface. The drift layer is of a first conductivity type, and is surrounded by a semiconductor layer of a second conductivity type including the collector layer. | 05-26-2011 |
20110103101 | INTEGRATED CONTROL CIRCUIT FOR CONTROLLING A SWITCHING POWER SUPPLY, SWITCHING POWER SUPPLY INCORPORATING THE SAME, AND A METHOD OF CONTROLLING A SWITCHING POWER SUPPLY - An integrated control circuit for controlling a switching power supply, a switching power supply incorporating the same, and a method of controlling the switching power supply, where the control IC includes a current comparator that detects current flowing through a switching device, a flip-flop circuit that controls the ON-period of the switching device, an averaging circuit that converts the peak load current value to a time-average, a comparator that detects an overloaded state from the load current, a delay circuit that sets a time from detecting the overcurrent state to stopping the switching operation, a latch circuit that stops the switching operation for a period of time, a first reference voltage supply used in the current comparator, which has a higher voltage value than a second reference voltage supply used in the comparator. | 05-05-2011 |
20110096640 | METHOD OF DRAWING A PATTERN FOR MAGNETIC TRANSFER - A method of drawing a pattern for magnetic transfer on a substrate, including the steps of rotating the substrate and scanning the substrate, by an electron beam, in a circumferential direction thereof, deflecting, using a deflection signal, the electron beam in a radial direction thereof, and switching irradiation of the electron beam on and off, so as to create the pattern of a plurality of dots. | 04-28-2011 |
20110096429 | MASTER DISK FOR MAGNETIC TRANSFER, A METHOD OF DRAWING A MAGNETIC TRANSFER PATTERN, AND A MAGNETIC RECORDING MEDIUM HAVING A TRANSFERRED MAGNETIC TRANSFER PATTERN - A master disk for magnetic transfer of a reference servo signal in a spiral mode, having a pattern including a plurality of dots groups, which are disposed at different radial positions of the master disk with a first pitch, and correspond to the reference servo signal in the spiral mode. Each of the plurality of dot groups includes a plurality of dots, successively disposed with a second pitch along a circumferential direction of the master disk at a same one of the radial positions. Each of the plurality of dots is of a ferromagnetic material, and has four sides, two opposing sides thereof extending in the circumferential direction, and the other two opposing sides thereof extending in a radial direction of the master disk. | 04-28-2011 |
20110086471 | METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH AN ALUMINUM OR ALUMINUM ALLOY ELECTRODE - A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 μm. | 04-14-2011 |
20110076514 | MAGNETIC RECORDING MEDIUM - A magnetic recording medium includes a substrate; a magnetic recording layer that is provided on the substrate and that has a plurality of tracks; and a separation layer that magnetically separates respective tracks of the plurality of tracks of the magnetic recording layer from one another and that is composed of a material including a nonmagnetic amorphous alloy selected from the group consisting of chromium boride (CrB), nickel boride (NiB), chromium phosphide (CrP), and nickel phosphide (NiP). The nonmagnetic amorphous alloy is used as a filler material for the separation layer and has a smooth surface after filling and an excellent corrosion resistance. This enables production of the magnetic recording medium by a simple method so that producibility is excellent and without spoiling reliability. | 03-31-2011 |
20110013303 | MAGNETIC TRANSFER DEVICE AND MAGNETIC TRANSFER METHOD - A magnetic transfer device and method are provided. A magnetic field generating structure comprises a pair of permanent magnets connected to a return yoke. Respective magnetic poles of the magnets, of a different polarity from one another, oppose each other with a conjoined body disposed therebetween. The magnetic field generating structure is moved from a position at an outer periphery of the conjoined body, to a position at an inner periphery of the conjoined body, and then moved from the position at the inner periphery across the conjoined body toward the outer periphery, to a position outside of the conjoined body. The return yoke is positioned at a radially more outward position, toward the outer periphery, than are the permanent magnets. The movement of the magnetic field generating structure is carried out while maintaining a constant distance from the rotating conjoined body. | 01-20-2011 |
20110002059 | MAGNETIC TRANSFER METHOD AND MAGNETIC RECORDING MEDIUM - A magnetic transfer method includes a conjoined body formation step of stacking a transfer master storing transfer information on a transfer receiving body. Air between contact surfaces of the transfer master and transfer receiving body is pushed out in the direction of a non-pressurized area by pressurizing the stacked transfer master and transfer receiving body, to form the conjoined body. The method further includes a transfer step of, by bringing a magnetic field generating module close to the conjoined body, and applying a magnetic field, carrying out a magnetic transfer of the transfer information from the transfer master to the transfer receiving body. A surface roughness of smooth portions of the transfer master in which no transfer information is formed, and the surface roughness of the transfer receiving body, is 1 nm or less. | 01-06-2011 |
20110000879 | METHOD OF MANUFACTURING A MASTER INFORMATION CARRIER FOR MAGNETIC TRANSFER AND A METHOD OF MANUFACTURING A MAGNETIC RECORDING MEDIUM - A method of easily manufacturing a master disk for magnetic transfer is disclosed. The method of the invention facilitates separation of the master disk and a slave disk to be transferred even after conducting a magnetic transfer process after adhering the two disks by pressing or exhaustion for the purpose of enhancing transfer performance. A method of manufacturing a master disk comprises a step of forming recesses by eliminating selected parts of a surface region of soft magnetic layer | 01-06-2011 |
20100330270 | METHOD OF MANUFACTURING A MAGNETIC RECORDING MEDIUM - A method of manufacturing a magnetic recording medium includes providing a substrate that is a magnetic recording medium substrate having a disc shape, having two main surfaces, and having defined therein a center hole; holding the center hole of the substrate from both main surfaces with two holding members that each have a disc shape to hold the substrate and to cover at least the periphery of the center hole adjacent to the two main surfaces of the substrate; and applying resist liquid simultaneously to both main surfaces of the substrate using spin coating to form a resist layer simultaneously on both main surfaces while maintaining the periphery of the center hole immediately adjacent to the two main surfaces of the substrate resist-free as an unapplied portion. The method enables efficient formation of uniform resist layers without defects on both faces of the substrate. | 12-30-2010 |
20100330221 | IMPRINT STAMPER AND IMPRINT DEVICE - An imprint stamper and imprint device are provided which, at the same time as being able to swiftly separate a substrate from a stamper after imprinting utilizing an even bowing and the resilience of the stamper when imprinting, can respond to a switch to mass production by making it difficult for a defect to occur on the pattern surface of the substrate and stamper. A stamper is configured of a plate-shaped body whose Young's modulus is 50 GPa or more, 500 GPa or less, whose thickness is 200 μm or more, 1000 μm or less, and which has a bow with a curvature of 2×10 | 12-30-2010 |
20100314247 | Filtered cathodic arc device and carbon protective film deposited using the device - A filtered cathodic arc device includes a plasma generating module which generates plasma using an arc discharge which has a cathode target as a deposition raw material; a deposition processing chamber in which a deposition receiving substrate is placed; a curved magnetic field duct that is placed between the plasma generating module and the deposition processing chamber, and that guides plasma generated by the plasma generating module to the deposition processing chamber with a magnetic field; a wool medium formed of a nonmagnetic metal fiber which covers the interior wall of the magnetic field duct; and a bias power source for the wool medium. The device balances reduction of particulate particles and a high deposition rate. | 12-16-2010 |
20100308496 | METHOD OF MANUFACTURING STAMPER - A method of manufacturing a stamper for nanoimprinting is provided which enables formation of finer patterns and which can be executed inexpensively. The method includes a step of forming a metal thin film on the surface of a substrate; a step of forming a resist layer on the surface of the metal thin film; a step of forming a relief pattern in the resist layer in use of an electron beam lithography method; a step of etching the metal thin film in imitation of the relief pattern in the resist layer, and forming a pattern-shaped metal mask; and, a step of forming a relief pattern on the substrate in imitation of the metal mask. In step (d), by side-etching the metal thin film, the width of the protruding portions formed in the substrate in step (e) are reduced to be less than the width of the depression portions of the relief pattern formed in step (c). | 12-09-2010 |
20100233516 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular type of magnetic recording medium includes a substrate, a soft magnetic underlying section including a plurality of distinct layers soft magnetic material, a recording section, and an intermediate section upon which the recording section is formed. The intermediate section is provided to improve the crystal orientation and impart a desired magnetic characteristic to the recording section. An uppermost one of the layers of soft magnetic material which, of all of the layers of soft magnetic material, is disposed closest to the intermediate section is predisposed to induce the intermediate section to crystallize in a desired way as it is formed. Therefore, the intermediate section may have a minimal thickness and yet achieve a crystallization that is sufficient to control the forming of the recording section. | 09-16-2010 |
20100233515 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular type of magnetic recording medium has a multi-layered recording structure made up of a plurality of ferro-magnetic layers and a non-magnetic layer interposed between the plurality of ferro-magnetic layers, and the perpendicular magnetic anisotropy energy of the lower ferro-magnetic layer is greater than the perpendicular magnetic anisotropy energy of the upper ferro-magnetic layer. Accordingly, the lower ferro-magnetic layer may be easily magnetically reversed by a magnetic field applied during a write operation. Thus, the perpendicular type of magnetic recording medium exhibits an enhanced thermal stability and write-ability. | 09-16-2010 |
20100233513 | MAGNETIC RECORDING MEDIUM - A magnetic recording medium includes a nonmagnetic substrate and at least a magnetic layer, a protective layer, and a lubricating layer provided on the nonmagnetic substrate. The magnetic recording medium is characterized in that the lubricating layer is formed of a lubricating agent represented by general formulas (1), (2) or (3), in which substituents R | 09-16-2010 |
20100209742 | METHOD OF MANUFACTURING A GLASS SUBSTRATE FOR A MAGNETIC RECORDING MEDIUM, A GLASS SUBSTRATE FOR A MAGNETIC RECORDING MEDIUM MANUFACTURED BY THE METHOD, AND A PERPENDICULAR MAGNETIC RECORDING MEDIUM - The present invention provides a method of manufacturing a glass substrate for a magnetic recording medium, the method allowing the surface roughness of the glass substrate being controlled easily and precisely in a stable state. The method comprises a step of finish polishing of polishing a surface of the glass substrate with a slurry containing two types of colloidal silica particles having different diameters and mixed in a predetermined ratio. | 08-19-2010 |
20100203710 | Method of manufacturing a semiconductor device - A method of manufacturing a semiconductor device by thinning a substrate by grinding, and performing ion implantation. In a diode in which a P anode layer and an anode electrode are formed at a side of a right face of an N | 08-12-2010 |
20100196527 | Imprinting device - An imprinting device has a fixed side pressing structure and a movable side pressing structure that is movable toward and away from the fixed side pressing structure. The fixed side pressing structure includes a fixed base plate, a positioning pin for positioning a fixed stamper and a recording medium substrate, and a fixed stamper support for holding the stamper in place using suction. The movable side pressing structure includes a movable base plate, a positioning pin for positioning a movable stamper, and a movable stamper support for holding the movable stamper in position using suction, electromagnetism or adhesive. | 08-05-2010 |
20100195249 | Method of manufacturing a magnetic recording medium and a magnetic recording medium manufactured by the method - A method of manufacturing a magnetic recording medium includes forming an electrically conductive intermediate layer over a non-magnetic substrate; forming an aluminum-containing layer on the intermediate layer; forming a plurality of micro pits in the aluminum-containing layer; generating an alumina-containing layer by oxidizing the aluminum-containing layer and simultaneously forming nano holes in the alumina-containing layer originating from the micro pits to expose the intermediate layer; cleaning and drying the nano holes using a sub- and super-critical fluid; and depositing a magnetic metal selectively on the intermediate layer to form a magnetic recording layer having a plurality of magnetic recording elements. The method thus employs alumina nano holes (ANHs) to fill magnetic metal uniformly and selectively even for ANHs with a diameter not larger than 25 nm. | 08-05-2010 |
20100189834 | IMPRINTING APPARATUS - The present invention provides an imprinting apparatus in which stampers, after a transfer step, can be readily and quickly detached from a substrate and an atmosphere in the imprinting apparatus is kept clean. The imprinting device has an ejecting mechanism for separating a recording medium substrate from a first stamper and a second stamper the ejecting mechanism being formed including a sleeve and a coil spring that are movably provided in a movable die base with an exhausting duct, and also including a sleeve and a coil spring that are movably provided in a fixed die base with an exhausting duct. | 07-29-2010 |
20100167093 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular magnetic recording medium, which includes a first magnetic recording layer, a second magnetic recording layer, and a third magnetic recording layer disposed sequentially on a nonmagnetic substrate, and a coupling layer formed between the first and second magnetic recording layers. The first, second and third magnetic recording layers have an easy axis of magnetization in a direction perpendicular to a film plane of the nonmagnetic substrate. The first and second magnetic recording layers are ferromagnetically coupled via the coupling layer. | 07-01-2010 |
20100167090 | METHOD OF FORMING A PROTECTIVE FILM, A PROTECTIVE FILM OBTAINED BY THE METHOD, AND A MAGNETIC RECORDING MEDIUM INCLUDING THE PROTECTIVE FILM - A method of forming a protective film for a magnetic recording medium is disclosed. The protective film suppresses cobalt elution out of the magnetic recording layer and has a thickness not larger than 3 nm. The method of the invention of forming a protective film for a magnetic recording medium comprises (1) a step of forming a protective film, on a lamination including a substrate and metallic film layers formed on the substrate, by means of a plasma CVD method using a raw gas of a hydrocarbon gas, wherein a flow rate of the hydrocarbon gas is in a range of 50 sccm to 200 sccm and a emission current is in a range of 0.1 A to 0.3 A, and (2) a step of surface treatment on the protective film that has been formed in the step (1), including sub-steps of (2a) a plasma treatment in an argon gas and (2b) a plasma treatment in a gas containing a nitrogen gas. | 07-01-2010 |
20100140727 | MAGNETIC THIN FILM AND METHOD OF MANUFACTURING THE SAME, AND VARIOUS APPLICATION DEVICES USING THE SAME - The present invention relates to a magnetic thin film containing a L1 | 06-10-2010 |
20100133229 | Method of Manufacturing a Magnetic Recording Medium - A method of manufacturing a magnetic recording medium avoiding degradation of magnetic performance due to a manufacturing process, including forming a mask protective film on a magnetic layer; forming a resist with a predetermined pattern on the mask protective film; forming a protective mask by etching the mask protective film using the resist as a mask; forming protrusions and recesses on a magnetic layer by etching the magnetic layer using the resist and the protective mask as masks; removing the protective mask; and forming a protective layer on the magnetic layer having the protrusions and recesses; where the magnetic recording medium is not exposed to the atmosphere during a period of time at least from the step of removing the protective mask to the step of forming the protective layer. | 06-03-2010 |
20100129686 | Magnetic recording medium for thermally assisted recording - A magnetic recording medium suppresses an anticipated decline in performance due to heating of the lubricant layer and protective layer in thermally assisted recording, and has superior durability and reliability. The magnetic recording medium comprises a layer stack comprising, in order on a nonmagnetic substrate, at least a magnetic recording layer, adiabatic layer, carbon-based protective layer, and lubricant layer. | 05-27-2010 |
20100119876 | Magnetic recording medium and method of manufacturing the same - A magnetic recording medium includes a substrate, and a soft magnetic layer, a crystal orientation control layer, a magnetic recording layer, and a protective layer formed sequentially on the substrate. The magnetic recording layer includes at least one granular magnetic layer having a granular structure and a non-granular magnetic layer having a non-granular structure. The at least one granular magnetic layers includes a plurality of magnetic portions and a separation portion surrounding the magnetic portions. The separation portion has magnetic characteristics different from the magnetic characteristics of the magnetic portions. The non-granular magnetic layer is a continuous film. | 05-13-2010 |
20100118456 | CMOS INTEGRATED CIRCUIT - A CMOS IC according to the invention includes a discharging circuit for preventing electrostatic breakdown from occurring. The discharging circuit includes a discharging NMOSFET Qe, which couples a gate terminal node Vgp continuous to the gate of an outputting PDMOS transistor Q | 05-13-2010 |
20100112210 | Spin coating method and a spin-coating apparatus - Spin coating method for a recording medium having a hole in the center, including moving a tip of a feeding nozzle to an initial position at a distance X above a recording surface and a distance A radially apart from a periphery of the hole, feeding a coating liquid onto the recording surface for a predetermined period of time while rotating the recording medium at a predetermined speed, and moving the tip from the initial position along a radial direction towards an outer periphery of the recording medium while keeping the tip above the recording surface at the distance X. X satisfies X≦2 [3 r γ/(2 g C)] | 05-06-2010 |
20100110844 | Master disk and method for manufacturing magnetic recording medium using same - A master disk for batch transferring of predetermined information recorded therein to a magnetic recording medium includes a substrate transmitting laser light, and convex portions provided on the substrate and formed of material reflecting or blocking the laser light. The convex portions have a pattern corresponding to the predetermined information. | 05-06-2010 |
20100109647 | PHYSICAL QUANTITY SENSING APPARATUS HAVING AN INTERNAL CIRCUIT, A FILTER CIRCUIT HAVING RESISTORS, POWER SUPPLY, GROUNDING, AND OUTPUT PADS, WITH THE LENGTH AND WIDTH OF WIRING BETWEEN THE OUTPUT OR POWER SUPPLY PAD AND THE INTERNAL CIRCUIT SET SO THAT THE RESISTANCE OF RESISTORS AND THE PARASITIC RESISTANCE COMPONENT OF THE WIRING SATISFY A CERTAIN RELATIONAL EXPRESSION - In a semiconductor device, in particular a physical quantity sensing apparatus, the length and the width of the wiring connecting a sensor internal circuit and an output or power supply pad are adjusted so that the total parasitic resistance components R | 05-06-2010 |
20100109626 | Power factor correction power supply unit, and control circuit and control method used in the same - A power factor correction power supply unit for correcting a power factor includes a switching device, an input voltage detection circuit, an output voltage detection circuit, an error amplifier for outputting an error signal obtained by amplifying a difference between an output voltage detection signal and a reference voltage, an ON width generation circuit for generating an ON time width, an OFF width generation circuit for generating an OFF time width of the switching device, and a switching device driving circuit. The drive circuit conducts an ON/OFF control over the switching device upon receiving a turn-on timing signal for turning on the switching device as soon as the OFF time width is terminated and upon receiving a turn-off timing signal for turning off the switching device as soon as the ON time width is terminated. | 05-06-2010 |
20100109015 | GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - An insulating layer, an undoped first GaN layer and an AlGaN layer are laminated in this order on a surface of a semiconductor substrate. A surface barrier layer formed by a two-dimensional electron gas is provided in an interface between the first GaN layer and the AlGaN layer. A recess (first recess) which reaches the first GaN layer but does not pierce the first GaN layer is formed in a surface layer of the AlGaN layer. A first high withstand voltage transistor and a control circuit are formed integrally on the aforementioned semiconductor substrate. The first high withstand voltage transistor is formed in the first recess and on a surface of the AlGaN layer. The control circuit includes an n-channel MOSFET formed in part of the first recess, and a depression type n-channel MOSFET formed on a surface of the AlGaN layer. In this manner, there are provided a gallium nitride semiconductor device which can be used under a high temperature environment while reduction in total circuit size can be attained, and a method for producing the gallium nitride semiconductor device. | 05-06-2010 |
20100103559 | MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING SAME - A method of manufacturing a magnetic recording medium is disclosed, as well as a magnetic recording medium manufactured by the method. In the manufacturing method, the uneven pattern has magnetic recording elements in protruding portions formed above a substrate, and depressed portions between the recording elements are filled with a filling material. The method allows a high quality magnetic recording medium to be manufactured inexpensively by eliminating the process of removing excess filling material used to fill depressions between magnetic recording elements, because the method allows material to be filled only in the depressed portions of an uneven pattern. The method includes a technique rendering the wettability of the protruding portion surfaces and the depressed portion surfaces different prior to the process of filling with the filling material. | 04-29-2010 |
20100103550 | MAGNETIC TRANSFER DEVICE - A magnetic transfer device enables precise positioning of both disks while preventing generation of dust by sliding of a holder, and also secures a space for transfer magnet arrangement. A master disk on which is formed a magnetic signal pattern and a magnetic disk which is to receive transfer are accommodated and brought into close contact in opposition to each other within an interior space formed by a male-side holder which moves to approach and withdraw and a female-side holder. A plurality of positioning pins are brought into contact with the outer face of the male-side holder to position the male-side holder, and by installing the positioning pins at positions lower than both the master disk and the magnetic disk, dust generated by sliding of the positioning pins does not fall onto the face of the master disk or the magnetic disk. | 04-29-2010 |
20100092727 | NANOIMPRINTING MOLD AND MAGNETIC RECORDING MEDIA MANUFACTURED USING SAME - A mold for nanoimprinting is provided which enables excellent S/N ratios in magnetic recording media after pattern transfer. The mold includes: a base material; an intermediate layer disposed adjacent to the base material; and a pattern formation layer disposed adjacent to the intermediate layer and having a fine uneven pattern in the surface. The intermediate layer comprises an adhesive containing a silicone resin with ultraviolet ray transmission properties, the elastic modulus thereof is smaller than the elastic modulus of the base material, and moreover is smaller than the elastic modulus of the pattern formation layer. | 04-15-2010 |
20100086809 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A magnetic recording medium exhibiting a high recording density performance is disclosed. The perpendicular magnetic recording medium has a soft magnetic underlayer, a first seed layer, a second seed layer, an intermediate layer, a granular magnetic recording layer, a non-granular magnetic recording layer, a protective layer, and a lubricant layer laminated on a nonmagnetic substrate in this order. The first seed layer contains cobalt, nickel, and at least one element selected from a group consisting of Si, Cr, V, Zr, Nb, Ta, Ti, Cu, and Mo, and the second seed layer contains nickel, chromium, and at least one element selected from a group consisting of Si, V, Zr, Nb, Ta, Ti, Cu, and Mo. | 04-08-2010 |
20100086808 | METHOD OF FORMING A PROTECTIVE FILM FOR A MAGNETIC RECORDING MEDIUM, A PROTECTIVE FILM FORMED BY THE METHOD AND A MAGNETIC RECORDING MEDIUM HAVING THE PROTECTIVE FILM - A method of forming a protective film of a magnetic recording medium is provided that achieves a good bonding characteristic with a lubricant film and at the same time, suppressing adhesion of contamination gases, to attain a reduced thickness of the magnetic recording medium. The method includes forming a protective film on a lamination including a substrate and a metallic film layer formed on the substrate, by means of a plasma CVD method using a raw material of a hydrocarbon gas, and performing a surface treatment on the protective film. The surface treatment includes a plasma treatment with argon gas, and a plasma treatment with a gas containing at least nitrogen gas. | 04-08-2010 |
20100086733 | ALUMINUM ALLOY SUBSTRATE AND A METHOD OF MANUFACTURING THE SAME - An aluminum alloy substrate having nano-holes in an ordered arrangement is disclosed, as well as a method of manufacturing such an aluminum alloy substrate. The aluminum alloy substrate of the invention includes a substrate, a first underlayer, a second underlayer, and an aluminum-containing layer including a lower layer portion composed of an amorphous aluminum alloy and an amorphous surface layer portion containing alumina, the surface layer portion having a plurality of nano-holes formed thereon. | 04-08-2010 |
20100084372 | METHOD FOR FORMING A CONCAVO-CONVEX PATTERN AND A METHOD OF MANUFACTURING A PATTERNED MEDIUM TYPE MAGNETIC RECORDING MEDIUM - The invention provides a method of forming a concavo-convex pattern by partly removing a magnetic layer and a carbon protective layer in an intermediate product of a magnetic recording medium having at least the magnetic layer and the protective layer formed on a substrate surface, wherein the magnetic layer is partly removed to form the concavo-convex pattern by a dry etching method using a etching gas of a mixture gas of argon and a deposition gas containing one or more types of carbon compounds. Also disclosed is a method of manufacturing a patterned medium type magnetic recording medium employing the method of forming a concavo-convex pattern. As a result a concavo-convex pattern free of after-corrosion and exhibiting good productivity is provided | 04-08-2010 |
20100067262 | Switching power source device, switching power source control circuit, and switching power source device control method - A switching power source device for supplying power to a load includes a series resonant circuit, a plurality of main switch elements or main switch element groups for switching a current. path of the series resonant circuit, a transformer for inducing a secondary current from the series resonant circuit, a plurality of synchronous rectification switch elements for rectifying the secondary current, a maximum on width control circuit for ordering a start and a completion of a maximum on width to the synchronous rectification switch element in synchronization with a timing of turning on the main switch elements Or the main switch element groups, and a synchronous control circuit. The circuit controls an on period of the synchronous rectification switch element so as to turn on the synchronous rectification switch element in synchronization with a particular timing, and turn off in synchronization with another timing. | 03-18-2010 |
20100067152 | ABNORMAL CURRENT PREVENTIVE CIRCUIT OF DC-DC CONVERTER - The voltage of a detection resistor connected to the drain of a low-side switching device is normally a negative voltage, but a positive voltage appears when a countercurrent occurs in an abnormal state. A current comparator monitors the voltage of the detection resistor, transmits high output to an AND circuit whole the voltage of the detection resistor is a negative voltage to maintain the output voltage of the current comparator in a low state when an output signal of a driver can be transmitted to the low-side switching device, and allows the output voltage of the current comparator in a low state when the voltage of the detection resistor becomes a positive voltage, thereby forcibly turning off the low-side switching device. | 03-18-2010 |
20100059028 | SEMICONDUCTOR DEVICE AND INTERNAL COMBUSTION ENGINE IGNITION DEVICE - A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device. | 03-11-2010 |
20100055845 | POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - A power semiconductor module and a method of manufacture thereof includes lead a frame carrying lead having inner and outer lead portions. The outer lead portions, which are connected by soldering to semiconductor chips simultaneously, eliminate the need for using bonding wires. Since no bonding wire is used for connecting the leads and the semiconductor chips, a sufficient current capacity is obtained. The bonding between an insulating circuit board and the semiconductor chips and the bonding between the semiconductor chips and the leads can be made simultaneously in a single step of reflow-soldering. As a result, the mounting time can be shortened and the power semiconductor module can be manufactured more efficiently. | 03-04-2010 |
20100055503 | MAGNETIC THIN FILM AND METHOD FOR FORMING THE FILM, AND MAGNETIC THIN FILM-APPLIED DEVICE - Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L | 03-04-2010 |
20100044749 | BIDIRECTIONAL SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCORPORATING THE SAME - A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in each split semiconductor region. First and second n-source regions are formed in the surface of the p-type offset region. This reduces the in-plane distance between the first and second n-source regions to thereby increase the density of cells. The breakdown voltage is maintained along the trenches. This increases the resistance to high voltages. Channels are formed in the sidewalls of the trenches by making the voltage across each gate electrode higher than the voltage across each of the first and second n-source electrodes. Thus, a bidirectional LMOSFET through which current flows in both directions is achieved. The LMOSFET has a high breakdown voltage and a decreased ON voltage. | 02-25-2010 |
20100040772 | Method of manufacturing a magnetic recording medium - A method of manufacturing a magnetic recording medium that includes a nonmagnetic underlayer, a magnetic layer, a protective layer, and a lubricant layer sequentially laminated on a nonmagnetic substrate. The method includes applying a lubricant onto the protective layer to form the lubricant layer, which includes ejecting shots of a heated lubricant liquid onto the protective layer from a nozzle. The heated lubricant liquid contains a perfluoropolyether lubricant, and each shot is of a quantity in a range of 0.1 to 10 pico liters. | 02-18-2010 |
20100038675 | POWER SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME - A power semiconductor device that realizes high-speed turnoff and soft switching at the same time has an n-type main semiconductor layer that includes lightly doped n-type semiconductor layers and extremely lightly doped n-type semiconductor layers arranged alternately and repeatedly between a p-type channel layer and an n | 02-18-2010 |
20100033288 | Thin inductor, method of producing the thin inductor, and ultra small size power conversion apparatus using the thin inductor - Two coil conductors of the same spiral shape are cut out from a lead frame. The two coil conductors are disposed back to back so that the front of a first coil conductor is superimposed over the rear of a second coil conductor. Central end portions of the first and second coil conductors are connected to each other through a connection layer. Outer end portions of the spirals of the first and second coil conductors are connected to corresponding ones of first and second terminals of the thin inductor, respectively. A sintered green sheet as a magnetic substance is disposed in gaps between the first and second coil conductors. In this manner, the invention can provide a thin inductor small in size, strong in mechanical strength and inexpensive, a method of producing the thin inductor, and an ultra small size power conversion apparatus using the thin inductor. | 02-11-2010 |
20100029070 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a device includes embedding trenches with an epitaxial layer having high crystallinity while a mask oxide film remains unremoved. An n-type semiconductor is formed on the surface of a silicon substrate, and a mask oxide film and a mask nitride film are formed on the surface of the n-type semiconductor. The mask laminated film is opened by photolithography and etching, and trenches are formed in the silicon substrate. The width of the remaining mask laminated film is narrowed, whereby portions of the n-type semiconductor close to the opening ends of the trenches are exposed. The trenches are embedded with a p-type semiconductor, whereby the surface of the mask laminated film is prevented from being covered with the p-type semiconductor. The p-type semiconductor is grown from the second exposed portions of the n-type semiconductor. V-shaped grooves are prevented from forming on the surface of the p-type semiconductor. | 02-04-2010 |
20100027323 | MAGNETIC RECORDING ELEMENT - A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si substrate, current electrodes that contact ends of the ferromagnetic fine wire, and voltage electrodes joined to the ferromagnetic fine wire and current electrodes to measure voltage across part of the ferromagnetic fine wire in cooperation with the current electrodes. A magnetic domain wall is induced in the ferromagnetic fine wire when the element is manufactured. A depression is formed in the surface on top of the ferromagnetic fine wire between the voltage electrodes, and between one of the current electrodes and one of the voltage electrodes. Voltage is measured between the two voltage electrodes when reading current is applied, to determine whether the magnetic domain wall is present between the two voltage electrodes, whereby recorded data can be identified. | 02-04-2010 |
20100025878 | IMPRINTING METHOD AND APPARATUS THEREFOR - An imprinting method forms a pattern in a resist surface of a substrate coated with a thermoplastic resist by using a mold having a pattern of projections and recesses formed in a transfer surface. The method includes an alignment step, a heating step, a press step, a cooling step, and release step, wherein the steps are performed in a plurality of units selected from independent units, composite units, and combinations of independent units and composite units. A mold and a substrate are paired with each other and conveyed between the units. An imprinting apparatus includes a plurality of units which perform the steps in the imprinting method and which are selected from independent units, composite units, and combinations of independent units and composite units. Conveying devices are provided which convey the mold and the substrate paired with each other between the plurality of units. | 02-04-2010 |
20100019342 | SEMICONDUCTOR DEVICE - In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region. | 01-28-2010 |
20090323376 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, CONTROL IC FOR SWITCHING POWER SUPPLY AND THE SWITCHING POWER SUPPLY - A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element. | 12-31-2009 |
20090317959 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing method for manufacturing a super-junction semiconductor device forms an oxide film and a nitride film on an n-type epitaxial layer exhibiting high resistance on an n-type semiconductor substrate exhibiting low resistance. The portion of the nitride film in the scribe region is left unremoved by patterning and an alignment marker is opened through the nitride film. After opening a trench pattern in the oxide film, trenches having a high aspect ratio are formed. The portion of the oxide film outside the scribe region is removed and a p-type epitaxial layer is buried in the trenches. The overgrown p-type epitaxial layer is polished with reference to the nitride film, the polished surface is finished by etching, and the n-type epitaxial layer surface is exposed. | 12-24-2009 |
20090317733 | Quinone Compound, Electrophotographic Photoconductor and Electrophotographic Apparatus - Disclosed is a compound having excellent electron transporting ability, which is useful for electrophotographic photosensitive bodies or organic EL devices. Specifically disclosed is a novel quinone compound having a structure represented by general formula (I). Also disclosed is a highly sensitive, positive charge type electrophotographic photosensitive body for copying machines and printers, wherein the novel organic material is used as a charge-transporting material in a photosensitive layer. Also specifically disclosed is an electrophotographic photosensitive body having a photosensitive layer formed on a conductive base and containing a charge-generating material and a charge-transporting material, wherein the photosensitive layer contains at least one of the above-described compounds. Further disclosed is an electrophotographic apparatus using such a positive charge type electrophotographic photosensitive body. | 12-24-2009 |
20090315070 | SEMICONDUCTOR DEVICE - A power semiconductor device is provided, that realizes high-speed turnoff and soft switching at the same time, includes n-type main semiconductor layer including lightly doped n-type semiconductor layer and extremely lightly doped n-type semiconductor layer arranged alternately and repeatedly between p-type channel layer and field stop layer and in parallel to the first major surface of n-type main semiconductor layer. Extremely lightly doped n-type semiconductor layer is doped more lightly than lightly doped n-type semiconductor layer. Lightly doped n-type semiconductor layer prevents a space charge region from expanding at the time of turnoff. Extremely lightly doped n-type semiconductor layer expands the space charge region at the time of turnoff to eject electrons and holes quickly further to realize high-speed turnoff. The pattern of arrangement of the lightly doped n-type semiconductor layer and extremely lightly doped n-type semiconductor layer is independent of the arrangement pattern of the gate electrode structure. | 12-24-2009 |
20090309157 | MOS TYPE SEMICONDUCTOR DEVICE - A MOS type semiconductor device, in which both improvement in radiation resistance and increase in withstand voltage is achieved, includes a nitride film formed on a LOCOS film and a PBSG film formed on the nitride film. The refractive index of the nitride film is set in a range of from 2.0 to 2.1 and the thickness of the nitride film is set in a range of from 0.1 Am to 0.5 μm to thereby provide the nitride film as a semi-insulative thin film. Of electron-hole pairs produced in the LOCOS film by γ-ray irradiation, holes low in mobility are let away to a source electrode via the nitride film to thereby suppress the amount of plus fixed electric charges stored in the LOCOS film. The provision of such a three-layer structure permits improvement in radiation resistance and increase in withstand voltage. | 12-17-2009 |
20090305080 | Perpendicular magnetic recording medium - A perpendicular magnetic recording medium, which includes a nonmagnetic substrate, and a first underlayer in the form of a soft magnetic under-layer (SUL), a second underlayer, an intermediate layer, a magnetic recording layer, a protective layer, and a lubricant layer sequentially laminated on the nonmagnetic substrate. The SUL has a plurality of SUL layers including a type-A SUL layer, a plurality of type-B SUL layers including at least two adjacent type-B SUL layers, and a nonmagnetic metal spacer layer disposed between the two adjacent type-B SUL layers. The type-A SUL layer may include a material selected from Co, Fe and Ni, a material selected from Cr, V and Ti, and a material selected from W, Zr, Ta and Nb. Each of the type-B SUL layers is in antiferromagnetic coupling, and may include a material selected from Co, Fe and Ni, a material selected from Cr, V and Ti, and a material selected from W, Zr, Ta and Nb. | 12-10-2009 |
20090303765 | Switching power source system - An error voltage Verr, being a difference between DC output voltage Vout and output reference voltage Vref, and an input voltage Vin are multiplied to produce first threshold voltage signal Vth | 12-10-2009 |
20090302346 | MOS TYPE SEMICONDUCTOR DEVICE - A surface between gate electrodes in an MOS gate structure is patterned so that missing portions are partially provided in surfaces of n | 12-10-2009 |
20090296254 | Magnetic recording medium evaluation apparatus and evaluation method - This invention provides a magnetic recording medium evaluation apparatus and evaluation method which yield results having good correlation with error rate measurements even when comparing media with different structures. Signals from a function generator are recorded in a magnetic recording medium. The recording signals are also passed through a first digital filter to obtain ideal restored signals. Reproduced signals from the magnetic recording medium are sampled in synchronization with the output from the function generator, and the discrete signals are passed through a second digital filter to obtain restored signals. The outputs from the first and second digital filters are input to an operational amplifier, and the difference between the restored signals and the ideal restored signals is taken for each sampling of the recording signals. The signal-to-noise ratio of the ideal restored signal to the average of the absolute value of this difference is used to evaluate signal quality. | 12-03-2009 |
20090295350 | Reverse current stopping circuit of synchronous rectification type DC-DC Converter - A reverse current stopping circuit includes a synchronous rectification device, a comparator for detecting a reverse current of an inductor, the synchronous rectification device being turned off when the reverse current is detected by the comparator, a reverse current detector circuit for detecting a switching terminal voltage after the synchronous rectification device is turned off, thereby determining a value of the inductor current to decide whether the inductor current is flowing in a reverse direction or a forward direction, and a memory unit for receiving a predetermined output signal from the reverse current detector circuit in accordance with a result of the reverse current detector circuit, and outputting a control signal for an offset voltage in accordance with the predetermined output signal. The offset voltage is changed in accordance with the control signal so as to adjust the inductor current to zero when the synchronous rectification device is turned off. | 12-03-2009 |
20090294917 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A semiconductor device is manufactured by forming a mask having a first opening and a second opening wider than the first opening on a principal surface of a first conductivity type semiconductor substrate, etching semiconductor portions of the first conductivity type semiconductor substrate exposed in the first and second openings to thereby form a first trench in the first opening and form a second trench deeper than the first trench in the second opening, and filling the first and second trenches with a second conductivity type semiconductor to concurrently form an alignment marker for device production and a junction structure of alternate arrangement of the first conductivity type semiconductor and the second conductivity type semiconductor. In this manner, it is possible to provide a semiconductor device in which a parallel pn structure and an alignment marker can be formed concurrently to improve the efficiency of a manufacturing process. | 12-03-2009 |
20090291520 | METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - A manufacturing method is provided for manufacturing a semiconductor apparatus including a main semiconductor device and a subsidiary semiconductor device, which facilitates preventing characteristics variations from causing and reducing the manufacturing costs. The method includes forming p-type well region in the surface portion of single-crystal semiconductor substrate of a main semiconductor device, mounting a single-crystal silicon diode above p-type well region with an insulator film interposed between diode and p-type well region for forming subsidiary semiconductor device, forming an insulator film on the main semiconductor device such that single-crystal silicon diode is covered with insulator film for fixing single-crystal silicon diode to single-crystal semiconductor substrate, and forming a metal film on the main semiconductor device for further forming a cathode side wiring on n-type cathode region in single-crystal silicon diode and an anode side wiring on p-type anode region in single-crystal silicon diode. | 11-26-2009 |
20090291326 | PROTECTIVE FILM MAINLY COMPOSED OF A TETRAHEDRAL AMORPHOUS CARBON FILM AND A MAGNETIC RECORDING MEDIUM HAVING THE PROTECTIVE FILM - A protective film is disclosed that is mainly composed of a tetrahedral amorphous carbon (ta-C film) that is denser than a DLC film formed by a plasma CVD method and containing aggregate particles so reduced as to a necessary and sufficient level, to provide a method of manufacturing such a protective film, and to provide a magnetic recording medium comprising such a protective film. The film is mainly composed of a ta-C film formed by a filtered cathodic arc method using a cathode target of glass state carbon. A magnetic recording medium is disclosed which includes a substrate, a magnetic recording layer, and the protective film mainly composed of a ta-C film. | 11-26-2009 |
20090291234 | Method for depositing thin film for magnetic recording medium and film deposition apparatus using the same - A method for depositing a thin film for a magnetic recording medium includes the steps of placing a substrate for a recording medium having a magnetic recording layer thereon on a substrate holder rotatably arranged within a film deposition chamber; and supplying a plasma beam from a plasma beam formation portion to the film deposition chamber so as to form a thin film of ta-C on the magnetic recording layer. In supplying the plasma beam, an inclination angle formed by a normal line to a surface of the magnetic recording layer and a plane orthogonal to a direction of incidence of the plasma beam is changed from a minimum inclination angle to a maximum inclination angle according to an increase in film thickness of the ta-C thin film. | 11-26-2009 |
20090289670 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element. | 11-26-2009 |
20090289344 | Semiconductor device - A semiconductor device includes an insulating substrate; at least one semiconductor element mounted on a first principal surface of the insulating substrate; and a heat radiator joined through a solder member to a second principal surface of the insulating substrate opposite to the first principal surface on which the semiconductor element is mounted. The solder member contains at least tin and antimony, and the antimony content of the solder member is in a range of from 7% by weight to 15% by weight, both inclusively. Thus, reliability of the semiconductor device is improved. | 11-26-2009 |
20090286093 | LEAD-FREE SOLDER - According to one embodiment of the invention, there is provided a lead-free solder including an alloy rolled into a shape of sheet. The alloy includes: tin; from 10 wt % to less than 25 wt % of silver; and from 3 wt % to 5 wt % of copper. The alloy is free from lead. | 11-19-2009 |
20090284991 | Switching power supply - A switching power supply includes a control circuit controlling ON and OFF of switching devices Q | 11-19-2009 |
20090284200 | AC motor driving circuit and electric vehicle driving circuit - In an AC motor driving circuit, a current source rectifier is provided on the output side of an AC generator and an AC motor is connected to the output side of the current source rectifier through a voltage source inverter. Along with this, one of terminals of each of a plurality of bidirectional switches is connected to its corresponding output terminal of the voltage source inverter, the other terminals of a plurality of the bidirectional switches are lumped together to be connected to one of terminals of a storage battery, and the other terminal of the storage battery is connected to one of DC input terminals of the voltage source inverter. This eliminates need for a large capacitor at a DC link and a reactor in a chopper which were previously necessary, by which the AC motor driving circuit is downsized. | 11-19-2009 |
20090283776 | WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and a second trench in a source electrode part (Schottky diode part) are disposed so that the first and second trenches are close to each other while and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a wide band gap semiconductor device which is small in size and low in on-resistance and loss, and in which electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage to thereby increase avalanche breakdown tolerance at turning-off time. | 11-19-2009 |
20090280646 | MANUFACTURING METHOD FOR MICRO-TRANSFORMERS - A micro-transformer manufacturing method is provided, which can improve throughput, prevent a crack from entering an insulating film between coils, and manufacture the micro-transformer without using a mask material having a high selection ratio. An insulating film is deposited on the whole face of a semiconductor substrate having an impurity-diffused region. This insulating film is partially removed to form a first opening and a second opening. A primary coil is formed such that a center pad contacts the impurity-diffused region through the first opening. A thin insulating film is deposited on the primary coil. An insulator material having a secondary coil formed thereon is adhered onto the insulating film on the primary coil by adhesive tape. The insulator material is sized to not cover both a pad, connected with the center pad of the primary coil through the impurity-diffused region, and an outer-end pad of the primary coil. | 11-12-2009 |
20090273325 | CURRENT NEGATIVE-FEEDBACK CIRCUIT AND DC-DC CONVERTER USING THE CIRCUIT - A current negative-feedback circuit comprises a current detection unit and a sawtooth-shaped waveform generation unit. The current detection unit comprises a first P-ch MOSFET Q | 11-05-2009 |
20090272982 | TRENCH GATE TYPE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A method of producing a trench gate type MOSFET is provided in which each intersection trench is formed as a two-stage trench structure. A gate trench is backfilled with a mask material and the mask material is then patterned to form a mask used for forming each intersection trench. The intersection trench intersecting the gate trench is provided so as to be deeper than the gate trench. A Schottky electrode is provided in the bottom of each intersection trench | 11-05-2009 |
20090268488 | Semiconductor device for controlling switching power supply - A semiconductor device controls a switching power supply. The semiconductor device includes a current inflow terminal; a starter circuit to cause a starting current to flow from the current inflow terminal to a power supply terminal to charge a capacitor externally connected to the power supply terminal; a control unit which controls the starter circuit to turn on to charge the capacitor with the starting current and controls the starter circuit to turn off to perform brown-out detection; a comparator which detects a brown-out state while the starter circuit is turned off; and a brown-out detection unit which receives output signals from the comparator and the control unit as inputs. The brown-out detection is performed while the starter circuit is off, so that the current inflow terminal for the starter circuit is used in common as a voltage detection terminal for detection of the brown-out state. | 10-29-2009 |
20090261514 | IMPRINTING METHOD AND APPARATUS THEREFOR - An imprinting method forms a predetermined pattern in a resist surface of a substrate coated with a photo-curing type resist by using a mold having a pattern of projections and recesses formed in a transfer surface. The method includes an alignment step, a press step, a UV irradiation step, and a release step. The steps are performed in plural units selected from independent units, composite units, and combinations of independent units and composite units. The mold and the substrate are paired with each other and conveyed between the units. An imprinting apparatus includes plural units which perform the steps in the imprinting method and which are selected from independent units in each of which one step is executed, composite units in each of which plural of steps are executed, and combinations of independent units and composite units; and conveying devices which convey the mold and the substrate. | 10-22-2009 |
20090261504 | IMPRINTING METHOD AND APPARATUS THEREFOR - An imprinting method includes the steps of setting a room-temperature imprint resist-coated substrate and a mold having a transfer surface having a pattern of projections and recesses therein in an assembling jig, pressing the patterned surface of the mold against the resist surface of the substrate, and releasing the mold from the substrate to separate the substrate, the mold and the assembling jig from one another. The steps are performed in plural independent units in each of which one step is executed, and the mold and the substrate are paired with each other by the assembling jig and conveyed between the units in a range of from the alignment step to the separation step. An imprinting apparatus includes an alignment unit which performs the alignment step, a press unit performing the press step, and a separation unit performing the separation step, wherein conveyance devices are provided to convey the mold and substrate between units. | 10-22-2009 |
20090251816 | Patterned medium inspection method and inspection device - A defect inspection method and device for a perpendicular magnetic recording medium that has discrete recording tracks and grooves between recording tracks, including DC demagnetizing the perpendicular magnetic recording medium, detecting a reproduced signal from the perpendicular magnetic recording medium after the DC demagnetizing, removing output fluctuation components caused by the grooves from the reproduced signal using a filter with a prescribed cutoff frequency and separating a peak output of the reproduced signal, comparing the peak output with a prescribed reference signal, and identifying a location where the peak output exceeds the reference signal as a defect location. The method further includes performing an envelope-detection on the reproduced signal, detecting a pre-format region in the perpendicular magnetic recording medium using the envelope-detection result, masking the detected pre-format region, and detecting the defect location in a region outside the masked pre-format region in the perpendicular magnetic recording medium. | 10-08-2009 |
20090246910 | Semiconductor device manufacturing method - A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil. | 10-01-2009 |
20090246711 | METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - A method for manufacturing a patterned medium employing an imprinting method is provided, which can prevent the occurrence of resist pattern faults due to gas trapped between the imprinting mold surface and the resist layer, as well as resist pattern faults due to bubbles which can be formed in the resist film and at the resist surface. As preprocessing for an imprinting process, exposure processing is performed in which a substrate with a resist film formed on the surface thereof is exposed to an atmosphere at a temperature higher than the temperature at the time of imprinting and an environmental pressure lower than the environmental pressure at the time of imprinting. | 10-01-2009 |
20090243389 | Multiple output magnetic induction unit and a multiple output micro power converter having the same - A multiple output magnetic induction unit includes a magnetic substrate, and a plurality of toroidal coils mounted on the magnetic substrate side by side. No insulating layer is required between the toroidal coils. | 10-01-2009 |
20090242930 | SEMICONDUCTOR DEVICE - A lateral high-breakdown voltage semiconductor device is provided in which the breakdown voltages of elements as a whole are improved, while suppressing increases in cell area. A track-shape gate electrode surrounds a collector electrode extending in a straight line, a track-shape emitter electrode surrounds the gate electrode, and a track-shape first isolation trench surrounds the emitter electrode. A second isolation trench surrounds the first isolation trench. The region between the first isolation trench and the second isolation trench is an n-type isolation silicon region. The isolation silicon region is at the same potential as the emitter electrode. In the cross-sectional configuration traversing the gate electrode, the depth of the p base region in an interval corresponding to an arc-shape portion of the gate electrode is shallower than the depth of the p base region in an interval corresponding to a straight-line portion of the gate electrode. | 10-01-2009 |
20090239100 | MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING SAME - A magnetic recording medium is formed by stacking in order, on a nonmagnetic base, at least an underlayer, magnetic recording layer, and protective layer. The magnetic recording layer includes a plurality of magnetic layers and an exchange-coupling control layer, and the magnetic recording medium is characterized in that a physical pattern is formed in the exchange-coupling control layer. The exchange-coupling control layer is located between the magnetic layers of the magnetic recording layer. | 09-24-2009 |
20090239099 | LUBRICANT FOR MAGNETIC RECORDING MEDIA, AND MAGNETIC RECORDING MEDIUM USING THE LUBRICANT - A magnetic recording medium having high bonding capability between the surface lubricant and the diamond-like carbon (DLC) protective layer in the surface of the magnetic recording medium is disclosed. The lubricant is a fluorine-containing lubricant for magnetic recording media represented by the following formula (1), (2) or (3), wherein the substituents R | 09-24-2009 |
20090237965 | SEMICONDUCTOR DEVICE FOR SWITCHING POWER SUPPLY CONTROL, STARTUP CIRCUIT, AND STARTUP METHOD FOR SWITCHING POWER SUPPLY DEVICE - A semiconductor device for switching power supply control limits the startup current supplied from a high-voltage input terminal, and prevents heat generation and combustion in case of an anomaly. A high-voltage input terminal is connected to the main winding of a transformer, and is supplied with a startup voltage upon input of a power supply to the switching power supply device. A power supply terminal is connected to a capacitor, and outputs a startup current to charge the capacitor after input of the power supply input. A startup circuit is connected between the high-voltage input terminal and the power supply terminal, and charges the capacitor while increasing the startup current with magnitude proportional to the voltage value of the power supply terminal, and after startup, turns off the startup current and supplies the power supply voltage only from the auxiliary winding of the transformer. | 09-24-2009 |
20090236612 | SILICON CARBIDE MOS SEMICONDUCTOR DEVICE - A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high impurity concentration is formed by ion implantation with such a high dose as required for attaining a good ohmic contact. The device has a silicon carbide semiconductor substrate, a voltage blocking layer of a first conductivity type formed on the substrate, a body region of a second conductivity type formed on the voltage blocking layer, a body contact region of the second conductivity type formed in a surface region of the body region by selective ion implantation, a surface of the body contact region having such a high impurity concentration as to impart an ohmic contact, a source contact region of the first conductivity type formed in a surface region of the body region by selective ion implantation, a surface of the source contact region having such a high impurity concentration as to impart an ohmic contact, and a source extension region with an impurity concentration lower than that in the source contact region under the source contact region at a region deeper than a tail part of a bottom region of the source contact region by selective ion implantation, the source extension region having an impurity concentration less than 3×10 | 09-24-2009 |
20090230500 | Semiconductor device - A semiconductor device equipped with a primary semiconductor element and a temperature detecting element for detecting a temperature of the primary semiconductor element. The device includes a first semiconductor layer of a first conductivity type that forms the primary semiconductor element. A second semiconductor region of a second conductivity type is provided in the first semiconductor layer. A third semiconductor region of the first conductivity type is provided in the second semiconductor region. The temperature detecting element is provided in the third semiconductor region and is separated from the first semiconductor layer by a PN junction. | 09-17-2009 |
20090224314 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A power MOSFET exhibits a high breakdown voltage and low ON-state resistance. The device includes a trench formed in a semiconductor substrate, a gate electrode located along a side wall of the trench and a bottom wall of the trench near a side wall thereof, a pillar section, a first drain region of a first conductivity type in the pillar section, a base region of a second conductivity type in contact with the side wall of the trench in a bottom portion thereof and the bottom wall of the trench, a source region of the first conductivity type in a surface portion of the base region, a RESURF region of the second conductivity type in the pillar section, the RESURF region being formed in contact with the first drain region; and a second drain region of the first conductivity type in a side wall surface portion of the pillar section. | 09-10-2009 |
20090219006 | Electric power converter - An electric power converter facilitates performing soft switching in the two-way electric-power-conversion operation thereof, and reducing the manufacturing costs thereof and the losses caused therein, The electric power converter includes a first switching device; a second switching device; a first series circuit including capacitor, a diode, the primary winding of transformer, and a third switching device; a second series circuit including a capacitor, a fourth switching device, the primary winding of transformer, and a diode; a third series circuit including a diode and the secondary winding of transformer; and a voltage clamping element connected in parallel to the primary winding of transformer. The first series circuit is connected in parallel to the first switching device, and the second series circuit is connected in parallel to second switching device. The third series circuit is connected between the DC output terminals. | 09-03-2009 |
20090218643 | Semiconductor Pressure Sensor - An object of the present invention is to solve problems in that aluminum electrodes, aluminum wires, and I/O terminals are corroded by corrosive gasses when a pressure of a pressure medium containing corrosive matters such as exhaust gas is measured with a semiconductor sensor; and improve not only the corrosion resistance of the sensor chip but also the corrosion resistance of the portion particularly functioning as the pressure receiver. | 09-03-2009 |
20090218313 | METHOD FOR MANUFACTURING PATTERNED MAGNETIC RECORDING MEDIUM - There is provided a method for manufacturing a patterned magnetic recording medium including a step of completely removing an etching resist on a magnetic layer | 09-03-2009 |
20090212373 | SEMICONDUCTOR DEVICE - A semiconductor device facilitates securing a high breakdown voltage and reducing a chip area thereof includes a low-potential gate driver circuit disposed on a semiconductor substrate, a high-breakdown-voltage junction edge-termination structure disposed in a peripheral portion of a high-potential gate driver circuit, disposed on the semiconductor substrate, for separating the low-potential gate driver circuit and the high-potential gate driver circuit from each other. A trench is disposed in the edge termination structure and between an n | 08-27-2009 |
20090208778 | Patterned magnetic recording medium and method for manufacturing same - A patterned magnetic recording medium includes a magnetic layer having a track-shape and/or dot-shape relief pattern which demarcates information recording regions; a first protective layer covering the magnetic layer; and a second protective layer formed on the first protective layer and including a tetrahedral carbon (ta-C) film. The first protective layer has excellent corrosion resistance and the second protective layer has excellent magnetic head sliding characteristics. A method for manufacturing the medium includes forming an etching pattern of photohardening etching resist on an underlayer or magnetic layer using an imprinting method and etching the underlayer or magnetic layer to form a relief pattern; forming the first protective layer on the relief pattern of the magnetic layer using plasma CVD; and forming the second protective layer including a tetrahedral carbon (ta-C) film, on at least respective top portions of the relief pattern, by a FCA method or by a FCVA method. | 08-20-2009 |
20090194786 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes deep first field limiting rings, shallow second field limiting rings, insulation films covering each surface portion of each of the first and the second field limiting rings, and conductive field plates each in contact with a surface of each of the first and the second field limiting rings. Each of the field plates project over a surface of each of the insulation films between the first field limiting rings and the second field limiting rings. | 08-06-2009 |
20090194785 | Semiconductor device and manufacturing method thereof - A p-type body region and an n-type buffer region are formed on an n | 08-06-2009 |
20090189181 | Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor - A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer. | 07-30-2009 |
20090184698 | Switching power supply - A switching power supply exhibits high conversion efficiency and facilitates reducing the size thereof. The switching power supply includes a half-bridge circuit including a first series circuit formed of switching devices Q | 07-23-2009 |
20090184340 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear surface of the FZ wafer is ground. Then, the ground surface is irradiated with protons and irradiated with two kinds of laser beams different in wavelength simultaneously to thereby form an N | 07-23-2009 |
20090181264 | METHOD FOR MANUFACTURING PATTERNED MAGNETIC RECORDING MEDIUM - A method for manufacturing a patterned magnetic recording medium that allows processing only required sites with high precision, in a dry etching process during formation of an uneven pattern in an interlayer. The method includes forming sequentially, on a substrate, a soft magnetic layer, an etching stop layer, a seed layer, an interlayer, a hard mask layer and a resist; obtaining a resist pattern by patterning the resist; obtaining a patterned hard mask layer by etching the hard mask layer using the resist pattern as a mask; stripping the resist pattern; obtaining a patterned interlayer by etching the interlayer using the patterned hard mask layer as a mask; stripping the patterned hard mask layer; and forming a magnetic recording layer by forming a perpendicular orientation section on the patterned interlayer, and forming a random orientation section on the seed layer. | 07-16-2009 |
20090174076 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing. | 07-09-2009 |
20090153227 | TEMPERATURE SENSOR CIRCUIT - A temperature sensor circuit is provided that facilitates preventing a too-high overshooting voltage from occurring at an output terminal when a power supply is connected to the temperature sensor circuit. The temperature sensor circuit includes a short-circuiting device, disposed in parallel to depletion mode NMOS, that short-circuits the drain and source of depletion mode NMOS when a power supply is connected; and delay device that transmits a signal for short-circuiting the drain and source of depletion mode NMOS for a certain period from the time point of power supply connection to short-circuiting device for preventing the voltage at output terminal of temperature sensor circuit from overshooting. | 06-18-2009 |
20090148725 | SUBSTRATE FOR PERPENDICULAR MAGNETIC RECORDING MEDIA AND PERPENDICULAR MAGNETIC RECORDING MEDIA USING SAME - Substrates for perpendicular magnetic recording media, and perpendicular magnetic recording media using such substrates, are disclosed. By setting the substrate inclination angle, or a parameter related to substrate shape relating to this angle, within an appropriate range, magnetic recording media can be obtained with excellent read signal quality and signal quality stability, regardless of the final substrate machining method. In a substrate for donut-shape magnetic recording media, comprising a main surface, an inner circumferential surface extending along the inside of the main surface, and an outer circumferential surface extending along the outside of the main surface, when the shape of the main surface is defined by a function Z(x,y) of x-y coordinates, the root mean square inclination angle (θsΔq), defined as the inverse tangent (tan−1 (sΔq)) of the root means square inclination (sΔq) which is the root mean square over the entire main surface of the micro-region surface inclination (Δρ) of the main surface, expressed by the following equation, is 5° or less | 06-11-2009 |
20090148723 | SUBSTRATE FOR RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM USING SAME - A substrate for a recording medium suited for thermally assisted recording methods has a disc shape with a center hole and includes a silicon single-crystal supporting member; an SiO | 06-11-2009 |
20090146714 | DRIVER CIRCUIT - A driver circuit facilitates reducing noises and losses and improving the driving performances thereof without connecting a series circuit of capacitor and a resistor to the gate of IGBT. The driver circuit includes a slope setting circuit that sets the gate voltage waveform of IGBT; and an operational amplifier that includes a non-inverting input terminal, to which an output voltage V* from slope setting circuit is inputted, and an inverting input terminal, to which a divided voltage Vgsf divided by resistors is inputted; and the operational amplifier outputs an output voltage Vout, proportional to the difference between the output voltage V* and the divided voltage Vgsf, to the gate of IGBT. | 06-11-2009 |
20090146638 | Micro power converter - An object of the invention is to provide a micro power converter of a step-up and step-down type without requiring more than two semiconductor switches, without increasing the size of a semiconductor chip, and without degrading efficiency. A micro power converter comprises a micro transformer composed of a planar transformer having a structure including a conductor wound on and through a planar magnetic core, and a semiconductor chip including semiconductor switches S | 06-11-2009 |
20090145769 | METHOD OF FABRICATING AN ALUMINA NANOHOLE ARRAY, AND METHOD OF MANUFACTURING A MAGNETIC RECORDING MEDIUM - An alumina nanohole array and a method of fabricating the same includes the steps of forming an aluminum thin-film on a substrate at a substrate temperature of −80° C. or below so that crystal grain growth is suppressed, even when a high-purity aluminum material is used, thus providing improved surface smoothness; and anodizing the aluminum thin-film. Preferably, the method additionally includes texturing by pressing a mold having an orderly array of projections against the aluminum thin-film to form pits on the aluminum thin-film which enables a larger array area to be formed. When the mold and the aluminum thin-film are held at a temperature of 150 to 200° C., the pressure used for pit formation is reduced. A magnetic recording medium manufactured by a method therefore includes forming a magnetic layer within the nanoholes so that the medium is suitable as a bit patterned media for a perpendicular recording system. | 06-11-2009 |
20090141523 | Switching control circuit and AC/DC converter using the same - A switching control circuit for an AC/DC converter stops the switching of a switching device in a low-phase angle range of an AC power supply to prevent an improper recovery operation after a brownout is detected. | 06-04-2009 |
20090140414 | Semiconductor device - A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals. | 06-04-2009 |
20090139505 | IGNITER SYSTEM - A coil failure detection circuit detects a rise of a collector current of an IGBT and a timer circuit measures the length of a rise period. If the rise is not a normal one, an electronic control unit judges that a coil failure has occurred. The electronic control unit turns off the IGBT to prevent misfires and stops a flow of fuel gas to a combustion chamber to prevent melting or deterioration of a catalyst. | 06-04-2009 |
20090134859 | Switching power supply device - A switching power supply device has lower correction circuit losses, and enables adjustments without affecting overcurrent limiting or other characteristics. An integrated circuit IC for power supply control generates a switching signal based on a feedback signal from a feedback circuit and a voltage signal from a current detection input terminal, and outputs the switching signal from an output terminal to a switching element. A voltage controlled oscillator is provided which, when the load is judged to be light based on the magnitude of the feedback signal, lowers the switching frequency. The correction circuit is connected between the output terminal of the integrated circuit and the signal input terminal for current detection, acts only when the switching element is on, and has the function of further lowering the switching frequency set in the integrated circuit. | 05-28-2009 |
20090130800 | Manufacturing method of semiconductor device - A method of manufacturing a semiconductor device includes the steps of bonding a semiconductor chip to a first side of a circuit board, bonding a metal base for dissipating heat produced by the semiconductor chip to a second side of the circuit board, and forming a dam on the metal base by a dam material so as to restrict flow of a solder used in bonding a plurality of the circuit boards to the metal base. | 05-21-2009 |
20090123782 | METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIA - A method for manufacturing discrete track media and patterned media is disclosed which enables a magnetic recording layer having excellent magnetic characteristics to be obtained without imparting damage to a crystal orientation control layer which is at the surface when forming the magnetic recording layer. The method for manufacturing magnetic recording media comprises a process of forming a soft magnetic layer on a substrate; a process of forming a first crystal orientation control layer on the soft magnetic layer; a process of providing a depression in at least a portion of the first crystal orientation control layer; a process of performing heat treatment of the first crystal orientation control layer; and a process of forming a magnetic recording layer on the first crystal orientation control layer. | 05-14-2009 |
20090123781 | METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIA - A method for manufacturing discrete track media and patterned media is disclosed which enables a magnetic recording layer having excellent magnetic characteristics to be obtained without imparting damage to a crystal orientation control layer which is at the surface when forming the magnetic recording layer. A method for manufacturing magnetic recording media comprises a process of forming a soft magnetic layer on a substrate; a process of forming a first crystal orientation control layer on the soft magnetic layer; a process of providing a depression in at least a portion of the first crystal orientation control layer; a process of forming a second crystal orientation control layer on the first crystal orientation control layer; and a process of forming a magnetic recording layer on the second crystal orientation control layer. | 05-14-2009 |
20090117724 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes the steps of forming an insulating film having a prescribed repetition pattern on one surface of a semiconductor substrate and then depositing semiconductor layers on the one surface of the semiconductor substrate; forming trenches from the other surface of the semiconductor substrate in such a manner that the trenches come into contact with the semiconductor layer, that plural trenches are formed for each semiconductor chip to be formed on the semiconductor substrate, and that at least one pattern of the insulating film is exposed through the bottom of each trench; and covering the inside surfaces of the trenches and the other surface of the semiconductor substrate with a metal electrode. | 05-07-2009 |
20090116267 | Driving system for switching power supply - A driving system for an electrical power conversion equipment includes a driving circuit for driving a switching device provided in the electrical power conversion equipment, and a driving capacity control circuit for controlling a driving capacity of the driving circuit. The driving capacity during a resonant operation of the electrical power conversion equipment becomes higher than that at a start of the resonant operation when the switching device is turned-on. | 05-07-2009 |
20090114946 | SEMICONDUCTOR DEVICE HAVING A CONTROL CIRCUIT AND METHOD OF ITS MANUFACTURE - A semiconductor has an IGBT active section and a control circuit section for detecting an IGBT abnormal state. A collector region is formed on the back surface side (i.e., on the IGBT collector side) in a selective manner, namely right under the IGBT active section. | 05-07-2009 |
20090114923 | SEMICONDUCTOR DEVICE - A semiconductor device includes a peripheral voltage withstanding structure, which includes an n | 05-07-2009 |
20090111230 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 04-30-2009 |
20090110959 | MAGNETIC RECORDING MEDIUM FOR THERMALLY ASSISTED RECORDING - A magnetic recording medium for use in a thermally assisted recording system is disclosed. The magnetic recording medium comprises at least a magnetic layer, a protective layer and a lubricant layer formed on a nonmagnetic substrate, wherein a lubricant of the lubricant layer exhibits such a heat resistance that an amount of volatilization when the magnetic layer is heated to a temperature not lower than a temperature Tw is less than 1% with respect to an initial amount of the lubricant in an unheated condition. The present invention addresses a problem of the heat resistance performance of the lubricant for use in magnetic recording media and provides a magnetic recording medium exhibiting high heat resistance. | 04-30-2009 |
20090108908 | BOOTSTRAP CIRCUIT AND STEP-DOWN CONVERTER USING SAME - The invention provides a bootstrap circuit which enables adequate charging of a capacitor used in the bootstrap circuit even during light load or no load conditions, and which does not impede the performance of a step-down converter proper, as well as a step-down converter using the bootstrap circuit. A capacitor charge/discharge path formation mechanism is provided in the bootstrap circuit that enables a terminal of a capacitor used in the bootstrap circuit to be separated and made independent from a step-down converter circuit. | 04-30-2009 |
20090102444 | DC-DC CONVERTER - A DC-DC converter, which controls the output voltage supplied to a load at a desired magnitude by performing on/off control of the input voltage using a switch, includes: an error amplifier for outputting the difference voltage between the output voltage and a preset reference voltage; and a plurality of phase compensation circuits for compensating the phase of the output voltage fed back to the error amplifier with different characteristics, whereby the DC-DC converter is configured such that changes in either the input voltage or in the load current flowing into the load are detected, and switching between the plurality of phase compensation circuits is performed. The frequency characteristic of each of the phase compensation circuits is determined for each of a plurality of demarcated fluctuation ranges of the input voltage or the load current. | 04-23-2009 |
20090098998 | Method of manufacturing a glass substrate, glass substrate manufactured by the method, and magnetic recording medium using the glass substrate - An object of the present invention is to provide a method of manufacturing a glass substrate containing alkali metals. A glass substrate manufactured by the method exhibits excellent performances including durability by virtue of suppressing elution of alkali metals. | 04-16-2009 |
20090096436 | DC-DC CONVERTER - A DC-DC converter includes a series circuit of a main switch and a choke coil and an output capacitor connected to one end of the series circuit and outputs a DC voltage from the one end of the series circuit. A first MOS transistor is connected in parallel to the series circuit and a second MOS transistor is connected in parallel to the output capacitor. A control circuit controls the gate voltages of the first MOS transistor and/or the second MOS transistor so that the first MOS transistor and/or the second MOS transistor outputs a changed target output voltage, whereby the output voltage is made equal to the target voltage at high speed. | 04-16-2009 |
20090096081 | Semiconductor device - A semiconductor device includes a substrate, at least one semiconductor element mounted on the substrate, a resin housing for housing the semiconductor element, the resin housing having a cover thereon, at least one pin provided and standing in the resin housing, and at least one printed substrate disposed inside the resin housing or outside the resin housing. The printed substrate and the cover of the resin housing are positioned by the pin. | 04-16-2009 |
20090093109 | Method for producing a semiconductor device using a solder alloy - In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate. | 04-09-2009 |
20090085166 | GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A gallium nitride semiconductor device is disclosed that can be made by an easy manufacturing method. The device includes a silicon substrate, buffer layers formed on the top surface of the silicon substrate, and gallium nitride grown layers formed thereon. The silicon substrate has trenches | 04-02-2009 |
20090085117 | LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF - A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply terminal. The level shift circuit includes a level shift resistor, a current-limiting resistor connected in series to the level shift resistor, and an n-channel MOSFET, with its drain connected to the current-limiting resistor. An output of the level-up circuit is obtained from the positioned between the level shift resistor and the current-limiting resistor. By providing the current-limiting resistor, the current that flows due to an excessive negative voltage or ESD surge is suppressed to prevent the level shift circuit from failing or malfunctioning. | 04-02-2009 |
20090085106 | Semiconductor device and semiconductor device manufacturing method - A semiconductor device having a low on resistance and high integration level with respect to the surface area of a substrate is provided. In the semiconductor device, a first trench, a second trench, and a third trench are provided in an element formation region provided on a semiconductor substrate. Metal is deposited within the first trench and second trench, to form a drain electrode and a source electrode, respectively. Polysilicon is deposited inside the third trench with a gate insulating film intervening, and a gate electrode is formed. | 04-02-2009 |
20090085100 | SEMICONDUCTOR DEVICE - A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device. | 04-02-2009 |
20090081484 | MAGNETIC RECORDING MEDIUM - A magnetic recording medium for thermally assisted recording is disclosed which achieves both high density writing and good control of temperature characteristics. The magnetic recording medium for thermally assisted recording comprises an underlayer, a magnetic recording layer, and a protective layer sequentially laminated on a nonmagnetic substrate. The magnetic recording layer has a structure composed of two magnetic layers and an exchange coupling control layer inserted between the magnetic layers, the two magnetic layers being magnetically coupled through the exchange coupling control layer. The coupling energy Jw in the process of writing a signal and the coupling energy Jr in the state of retaining a signal satisfy a relation 003-26-2009 | |
20090080227 | Switching power supply - A current-mode switching power supply is provided, in which there is no unstable operation arising from the fact that signals to generate PWM signals are minute, even when a load is light and a switching frequency is high. In a switching power supply of this invention, an added slope signal is superposed in an early stage of a rise of a current detection signal, so that a combined signal Vsig is caused to reach a certain magnitude even when the load is light and the switching frequency is high, and consequently an output FB of an error amplifier ERRAMP which is balanced with the combined signal is also increased. By this means, even in a current mode, it is possible to eliminate unstable operation arising from the fact that the feedback signal FB which is the output of the error amplifier ERRAMP and the combined signal Vsig are minute. | 03-26-2009 |
20090075121 | APPARATUS AND METHOD FOR FORMING CARBON PROTECTIVE LAYER - An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line. | 03-19-2009 |
20090072867 | SEMICONDUCTOR DEVICE - A semiconductor device can output a reference voltage for an arbitrary potential and can detect the voltage of each cell in a battery including multiple cells very precisely. The device includes a depletion-type MOSFET | 03-19-2009 |
20090058499 | GATE DRIVING CIRCUIT AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET. | 03-05-2009 |
20090051466 | Micro-power source module - A power source IC and noise absorption capacitors (decoupling capacitors) are formed on an inductor in such a manner that the noise absorption capacitors are provided on the input side and the output side, respectively. A micro-power source module can'thus be provided which is small in occupied area and height and can reduce conduction noise due to ground lines. | 02-26-2009 |
20090046489 | Insulated transformers, and power converting device - An insulated transformer, which can suppress aging deterioration and can reduce the influence of noise caused by external magnetic flux, while improving reliability and environmental resistance, and can send and receive signals while electrically insulating a low-voltage side and a high-voltage side. A secondary coil is formed on a semiconductor substrate, and a primary coil is formed on one face of a glass substrate. The primary coil fixes the glass substrate formed on one face onto the semiconductor substrate through the other face of the glass substrate by an adhesive layer. | 02-19-2009 |
20090046405 | SEMICONDUCTOR DEVICE - In order to enable detection of degradation of the heat dissipation from a semiconductor chip, even when the operating state of a semiconductor device cannot be predicted, a thermal resistance calculation circuit calculates the thermal resistance of the heat dissipation path from the semiconductor chip, based on the loss of a switching element calculated by a loss calculation circuit and the temperature of the semiconductor chip calculated by a temperature calculation portion, and when the voltage corresponding to the thermal resistance calculated by the thermal resistance calculation circuit exceeds a reference voltage, switching operation of the switching element is halted. | 02-19-2009 |
20090045481 | SEMICONDUCTOR DEVICE HAVING BREAKDOWN VOLTAGE MAINTAINING STRUCTURE AND ITS MANUFACTURING METHOD - A semiconductor device has an active portion having at least one well region in a semiconductor layer, and a breakdown voltage maintaining structure surrounding the active portion. The maintaining structure includes a conductor layer over each of a plurality of guard rings with an insulating film interposed in between and connected to the respective guard ring. An inner side end portion of each conductor layer projects over the immediate adjacent inner side guard ring. The impurity concentration of the guard rings is set between the impurity concentrations of the semiconductor layer and the well regions. A field plate can extend over the innermost conductor layer with the insulating film interposed in between. The field plate is in contact with the outermost well region and is in contact with the first conductor layer. The outer side end of the field plate extends outwardly beyond an outer side end of the innermost conductor layer. With these arrangements, the guard rings can be shortened and the chip size can be reduced. Furthermore, the device can be made less susceptible to external charge. | 02-19-2009 |
20090045414 | SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND SILICON CARBIDE DEVICE - A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film. | 02-19-2009 |
20090039432 | SEMICONDUCTOR DEVICE - A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device. | 02-12-2009 |
20090032979 | SEMICONDUCTOR DEVICE HAVING ALIGNMENT MARK AND ITS MANUFACTURING METHOD - Many holes are formed in an interlayer insulating film and the surface of the interlayer insulating film is covered with a metal film, with its surface undulated by openings or recesses formed to scatter reflection light. The size of the recesses is about the size of contact holes of elements. Hence the recesses are not detectable by an image recognition apparatus. The size of the metal film, however, is set so that it can be detected by the image recognition apparatus. | 02-05-2009 |
20090029041 | Method of cleaning a substrate for a magnetic recording medium and a method of manufacturing a magnetic recording medium - The invention provides a method of cleaning a magnetic recording medium substrate that removes residual substances and suppresses oxidation of the substrate surface. The method of cleaning the magnetic recording medium substrate uses nano-bubble water. Also disclosed is a method of manufacturing a magnetic recording medium that includes the method of cleaning the magnetic recording medium substrate and steps of sequentially forming at least a magnetic layer, a protective layer, and a liquid lubricant layer on the cleaned substrate. | 01-29-2009 |
20090026066 | PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME AND PRODUCT THEREOF - The quantity of oxide contained in a magnetic layer is controlled to control the crystal grains and the segregation structure for ensuring low noise characteristic in a granular magnetic layer of a perpendicular magnetic recording medium. The granular magnetic layer consists of ferromagnetic crystal grains and a nonmagnetic grain boundary region mainly of an oxide surrounding the ferromagnetic crystal grains. The perpendicular magnetic recording medium has a nonmagnetic underlayer composed of a metal or alloy having hexagonal closest-packed crystal structure. The ferromagnetic crystal grain is composed of an alloy containing at least cobalt and platinum. The volume proportion of the nonmagnetic grain boundary region mainly of the oxide falls within a range of 15% to 40% of the volume of the total magnetic layer. | 01-29-2009 |
20090016087 | Switching power source - An error voltage Verr, as amplified by an amplifier, and an input voltage Vin, are multiplied together by a multiplier to generate a first threshold value signal Vth | 01-15-2009 |
20090015967 | PERPENDICULAR MAGNETIC RECORDING MEDIA AND PERPENDICULAR MAGNETIC RECORDING APPARATUS - A perpendicular magnetic recording media is disclosed which employs inexpensive materials in the intermediate layer of the high-recording density media while exhibiting magnetic characteristics comparable or superior to those of media using Ru or Re. A perpendicular magnetic recording apparatus employing this perpendicular magnetic recording media also is disclosed. The perpendicular magnetic recording media has a nonmagnetic substrate, a soft magnetic backing layer formed on the nonmagnetic substrate, a seed layer formed on the soft magnetic backing layer, an intermediate layer formed on the seed layer, a magnetic layer formed on the intermediate layer, and a protective layer formed on the magnetic layer. The intermediate layer comprises an alloy with the hcp structure containing 55 at % or more Zn, the magnetic layer comprises an alloy with the hcp structure containing Co, and the Aθ50 value of the orientation plane (0002) of the magnetic layer is between 1.5° and 4°. | 01-15-2009 |
20090014754 | TRENCH TYPE INSULATED GATE MOS SEMICONDUCTOR DEVICE - A vertical and trench type insulated gate MOS semiconductor device includes a plurality of regions each being provided between adjacent ones of a plurality of the straight-line-like trenches arranged in parallel and forming a surface pattern of a plurality of straight lines. A plurality of first inter-trench surface regions are provided, each with an n | 01-15-2009 |
20090010027 | SWITCHING POWER SUPPLY APPARATUS - A switching power supply apparatus which includes a DC power supply, an isolation transformer having primary, secondary and tertiary windings, and a switching element, and in which, by turning the switching element on and off, the high-frequency voltage appearing in the secondary windings of the isolation transformer is rectified to obtain a DC output, power consumption can be decreased during standby (in burst mode) in particular by means of a control circuit which controls the turn-on and turn-off of the element and similar. | 01-08-2009 |
20090007418 | Powder magnetic core and method for manufacturing the same - In a method for manufacturing a powder magnetic core, magnetic layer green sheets is formed by using magnetic metal particles-having an insulating oxide layer on a surface thereof, and insulating layer green sheets are formed by using insulating particles. The magnetic layer green sheet and the insulating layer green sheet are alternately laminated, and the layers are press molded. | 01-08-2009 |
20080318359 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE - A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which the density of basal plane dislocations (BPDs) in particular is reduced in an SiC crystal substrate. Irregularities in the surface of the substrate due to this reduction also can be flattened. A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which, prior to forming an epitaxial growth layer on a silicon carbide substrate with an off-axis angle of 1° to 8°, parallel line-shape irregularities, which have an irregularity cross-sectional aspect ratio equal to or greater than the tangent of the off-axis angle of the silicon carbide substrate, are formed in the substrate surface. The irregularites have a height between 0.25 μm and 5 μm. | 12-25-2008 |
20080318085 | METHOD OF FORMING A PROTECTIVE FILM AND A MAGNETIC RECORDING MEDIUM HAVING A PROTECTIVE FILM - A method of forming a carbon protective film is disclosed that improves electromagnetic conversion characteristics through reduction of the film thickness without any damage on a magnetic layer. Also disclosed is a magnetic recording medium that exhibits good electromagnetic conversion characteristics and corrosion resistance. The method of forming the carbon protective film uses a high frequency plasma CVD method on a disk including at least a magnetic film on a nonmagnetic substrate. A bias voltage in a range of −200 V to zero V is applied at the beginning of discharge in a process of forming the carbon protective film, and a bias voltage in a range of −500 V to −200 V is applied at the end of discharge. Also disclosed is a magnetic recording medium having at least a magnetic film and a protective film on a nonmagnetic substrate, wherein the protective film is formed by the method of forming a protective film stated above according to the invention. | 12-25-2008 |
20080315364 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME - After introducing oxygen into an N | 12-25-2008 |
20080315250 | INSULATED GATE SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A trench-type insulated-gate semiconductor device is disclosed that includes unit cells having a trench gate structure that are scattered uniformly throughout the active region of the device. The impurity concentration in the portion of a p-type base region, sandwiched between an n+-type emitter region and an n-type drift layer and in contact with a gate electrode formed in the trench via a gate insulator film, is the lowest in the portion thereof sandwiched between the bottom plane of n+-type emitter regions and the bottom plane of p-type base region and parallel to the major surface of a silicon substrate. The trench-type insulate-gate semiconductor device according to the invention minimizes the variation of the gate threshold voltage. | 12-25-2008 |
20080303057 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A semiconductor device and a method of forming the semiconductor device include a substrate and an n drift layer on the substrate with an insulator film placed between them. A trench is provided in a section between a p base region and an n buffer layer on the surface layer of the n drift layer. Moreover, the distance between the bottom of the trench and the insulator film on the substrate is 1 μm or more and 75% or less than the thickness of the n drift layer. This reduces the ON-state Voltage Drop and enhances the device breakdown voltage and the latch up current in a lateral IGBT or a lateral MOSFET. | 12-11-2008 |
20080298105 | Switching power supply system - A switching power supply system, in which a DC voltage obtained by full-wave rectification of an AC voltage is turned on and off by a switching device, converted to a desired DC voltage and outputted, includes a slope compensating circuit and an overcurrent protecting circuit, and a full-wave rectified voltage inputted to a terminal Tm is subtracted from a reference voltage Vref inputted to a terminal Tr to produce a reference voltage waveform signal (OCP correction value) Vocp to eliminate the influence of slope compensation. The reference signal of the overcurrent protection circuit is varied by a signal having a reverse phased waveform relative to the phase of the full-wave rectified waveform. This enables highly accurate overcurrent protection with a net overcurrent protection level unaffected by the slope compensation varied by the input voltage when the system is operated in a current mode. | 12-04-2008 |
20080298092 | Control circuit and method for controlling switching power supply - Control circuit and method for controlling a switching power supply, which regulates its output voltage using pulse-width modulation (PWM) that switches on and off a main switch with a PWM signal (VCONT) at an adjusted ON-period ratio of the main switch. The control circuit includes an error signal amplifier circuit that compares the output voltage with a reference voltage and outputs an error signal VE based on the comparison. The control circuit also includes an ON-period adjusting circuit that starts generating a PWM signal (VCONT) in every cycle based on a pulse VPULSE, the period thereof being fixed, and adjusts the HIGH-period of the PWM signal (VCONT) based on the output voltage of the error signal VE. As a result, the control circuit widens the HIGH-period ratio range or the LOW-period ratio range of the PWM signal greatly. | 12-04-2008 |
20080293240 | MANUFACTURING METHOD OF A SILICON CARBIDE SEMICONDUCTOR DEVICE - A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask. | 11-27-2008 |
20080284033 | Semiconductor device and method for manufacturing semiconductor device - A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 μm or greater and less than 100 μm. | 11-20-2008 |
20080284007 | Semiconductor module and method for manufacturing semiconductor module - A semiconductor module includes a first metal foil; an insulating sheet mounted on a top surface of the first metal foil; at least one second metal foil mounted on a top surface of the insulating sheet; at least one semiconductor device mounted on the second metal foil; and a resin case for surrounding the first metal foil, insulating sheet, second metal foil, and semiconductor device. A bottom end of a peripheral wall of the resin case is located above a bottom surface of the first metal foil. A resin is provided inside the resin case to fill the inside of the resin case. The bottom surface of the first metal foil and the resin form a flat bottom surface so that the flat bottom surface contacts an external mounting member. | 11-20-2008 |
20080278116 | Battery protective device and semiconductor integrated circuit device - A battery protective device that protects against battery damage and semiconductor destruction from overdischarge and overcharge of the battery. Resistance across switching elements is controllable to prevent current leakage through parasitic dipole elements in the integrated circuit. Current is detected with an overdischarge detecting circuit and an overcharge detecting circuit. Direction of the current to/from the battery is detected by discharge overcurrent and charge overcurrent detecting circuits. Switching discharge FETs and charge FETs are enabled as independently controlled, ON-OFF parallel switching elements, interposed in series in the charge/discharge current path of the battery. Only a part of the discharge or charge switching FETs can be turned ON and OFF for accurate current control in accordance with the detected current and its direction. | 11-13-2008 |
20080266042 | Transformer unit, and power converting device - A transformer unit and a power converting device, which lessen the influence of noise caused by an external magnetic flux, while reducing the temperature dependency of a coupling coefficient, and which transfer signals while insulating a low-voltage and a high-voltage side electrically. Air-core type insulated transformers have a first and second winding of a primary winding as a sending side and a first and second winding of a secondary winding as a receiving side. The windings of the primary winding are connected in parallel and are wound so that the directions of magnetic fields generated by an exciting current oppose each other. The windings of the secondary winding are wound so that electromotive forces to be generated by an external magnetic flux cancel each other, and are connected in series so as to raise the electromotive forces by a signal magnetic flux generated by the primary winding. | 10-30-2008 |
20080261080 | LONGITUDINAL MAGNETIC RECORDING MEDIUM - A magnetic recording medium includes as formed on a non-magnetic substrate, a seed layer, an underlayer of a bcc structure-having Cr alloy, an interlayer of an hcp structure-having Ru alloy, a lower recording layer of a Co—Cr—Pt—B base alloy, an upper recording layer having the same alloying base components as those of the lower recording layer, a larger B atom concentration and having a larger Co atom concentration to Cr atom concentration ratio, and a protective layer. The lower recording layer includes a first and a second lower recording layer. When the B atom concentration in the first lower recording layer is B1 and that of the second lower recording layer is B2, then B110-23-2008 | |
20080258102 | Powder magnetic core and the method of manufacturing the same - A powder magnetic core with improved high frequency magnetic characteristics and reduced eddy current loss is manufactured by a manufacturing method including the steps of (a) providing coated soft magnetic particles which are particles composed of soft magnetic material which each have been coated with an insulating coating, and insulator particles; (b) forming a magnetic layer by press molding the coated soft magnetic particles in a mold assembly; (c) forming an insulator layer on the magnetic layer by press molding the insulator particles in the mold assembly; and (d) repeating the steps (b) and (c) to fabricate a laminate of alternating magnetic layers and insulator layers and provide the powder magnetic core. | 10-23-2008 |
20080247198 | CONTROL CIRCUIT AND CONTROLLING METHOD OF SWITCHING POWER SUPPLY SYSTEM - A switching power supply system has a control circuit that controls an output voltage by causing a switching device to turn ON and OFF. The control circuit includes a control pulse supplying unit that supplies a pulsed signal that_keeps the switching device turned-ON and -OFF. A protection circuit shuts down the switching power supply system upon occurrence of an abnormality. A delay circuit produces a delay signal that delays by a specified time duration the termination of a state of the pulsed signal in which the pulsed signal keeps the switching device turned-ON. The protection circuit is responsive to the pulsed signal or the delay signal to switch between an operation state and a stand-by state. | 10-09-2008 |
20080237790 | Composite semiconductor device - The electrode of a thin-type capacitor is connected to the rear surface of a p-type semiconductor substrate which is brought to a ground potential, by a conductive DAF (Die Attach Film) or by a conductive adhesive, and the electrodes of the front surface of the p-type semiconductor substrate are respectively connected with and stacked on the terminals of a thin-type inductor by bumps, whereby manufacturing costs can be reduced while the occurrence of noise can be suppressed and packaging area can be made small. | 10-02-2008 |
20080231244 | DC-DC CONVERTER - An overcurrent detection circuit ( | 09-25-2008 |
20080227277 | Method of manufacturing semiconductor element - A method of manufacturing a semiconductor element includes implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and irradiating the doped layer with a plurality of pulsed laser beams supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer. The activated doped layer may be one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different. Device breakage and failure of the manufactured semiconductor element due to heat induced during laser irradiation are substantially prevented by this method. | 09-18-2008 |
20080226950 | PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE MEDIUM - A perpendicular magnetic recording medium is disclosed in which a soft magnetic layer used as a low K | 09-18-2008 |
20080220620 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of manufacturing a silicon carbide semiconductor device includes forming a trench for a MOS gate in an SiC substrate by dry etching. Thereafter, the substrate with the trench is heat treated. The heat treatment includes heating the substrate in an Ar gas atmosphere or in a mixed gas atmosphere containing SiH | 09-11-2008 |
20080220157 | PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURING SAME - A perpendicular magnetic recording medium is disclosed in which each magnetic crystal grain in the magnetic recording layer has a multilayer structure and has a configuration like a truncated cone shape, in which the crystal grain of the final layer deposited in the film surface side at the final stage is smaller than the diameter of the crystal grain in the initial layer deposited on the substrate side at the initial stage. The invention improves S/N (signal output to noise ratio) by enhancing signal output and reducing noises. The medium is produced by a simple manufacturing method suitable for mass production, and provides a medium of high recording density by improving recording resolution. | 09-11-2008 |
20080219033 | Switching power supply device - A switching power supply device includes a first series circuit of first and second switching elements connected in parallel with a DC power supply. An isolation transformer has primary and secondary windings and first and second auxiliary windings, a first layer including the primary windings between a second layer of the two auxiliary windings, and a third layer of the secondary windings. A capacitor in series with the primary windings defines a second series circuit in parallel with the second switching element. A rectifying and smoothing circuit includes a rectifying diode and a smoothing capacitor, connected to the secondary windings. First and second control circuits turn on and off the first and second switching elements based on voltages generated in the two auxiliary windings, to obtain a DC output from the rectifying and smoothing circuit, enabling an adequate auxiliary windings voltage and stable switching operation including stable zero-voltage turn-on. | 09-11-2008 |
20080218906 | MAGNETIC RECORDING MEDIA AND METHOD OF MANUFACTURE OF THE SAME - A magnetic recording medium is disclosed in which there is no degradation of magnetic characteristics at the time of manufacture, such as is seen in proposed discrete-track media or patterned media. The medium can be manufactured by a simple method and results in excellent productivity. Magnetic recording media have a substrate, and, provided thereon in order from the substrate side, are a soft magnetic layer, a crystal orientation control layer, and a magnetic recording layer. The area of at least a portion of the crystal orientation control layer is provided with a depressed portion. Portions of the magnetic layer formed on this depressed portion have a non-granular structure, whereas portions of the magnetic formed on the crystal orientation control layer outside the depressed portion have a granular structure. A method for manufacturing the magnetic recording media is disclosed having a soft magnetic layer formation process of forming a soft magnetic layer on a substrate; a crystal orientation layer formation process of providing a crystal orientation control layer on the soft magnetic layer; a depressed portion formation process of providing a depressed portion in the area of at least a portion of the crystal orientation control layer; and a process of forming a magnetic recording layer on the crystal orientation control layer on which the depressed portion is formed. | 09-11-2008 |
20080217760 | Semiconductor device and method of manufacturing same - A semiconductor device includes an outer resin case having a peripheral wall and terminal mounting holes formed in the peripheral wall, and a layer assembly provided in the outer resin case. The layer assembly includes a semiconductor chip, an insulating circuit board on which the semiconductor chip is mounted, and a heat-dissipating metal base. External terminals having leg portions are arranged in mounting holes of the peripheral wall, and are press-fitted into the terminal-mounting holes. Bonding wires connect the terminal leg portions and a conductive pattern of the insulating circuit board or the semiconductor chip. | 09-11-2008 |
20080213626 | METHOD OF MANUFACTURE OF GLASS SUBSTRATE FOR INFORMATION RECORDING MEDIUM, METHOD OF MANUFACTURE OF MAGNETIC RECORDING DISK, AND MAGNETIC RECORDING DISK - A method of manufacture of a glass substrate for a magnetic recording medium, which has both high substrate strength and low alkaline elution, includes an etching process of etching the inner-edge face of a donut-shaped glass substrate having an aluminosilicate composition, formed by removing the center portion of a die-molded disc-shaped glass substrate, and an alkali sealing process of performing alkali sealing treatment by proton substitution of alkali ions in the surface layer of the etched donut-shaped glass substrate. The process is used to manufacture a magnetic recording medium incorporating a glass substrate having a total alkaline elution amount of less than 3.1 μg/disk, wherein the magnetic recording medium has a transverse rupture strength greater than 132 N. | 09-04-2008 |
20080211740 | Display driving device - In a display driving device which performs scan driving of a PDP or similar, to enable rapid scan operation, reduction of the chip size, and lowering of costs, as well as elimination of coupling problems. The display driving device is provided with a pull-up switching element Nu connected to a first driving voltage (VDH) supply line and common to all bits; diodes D | 09-04-2008 |
20080211437 | POWER SUPPLY SYSTEM FOR DRIVING ELECTRIC ROTATING MACHINE - An electric power supply system for driving an electric rotating machine has a generator supplied with driving power from an engine to generate alternating-current electric power and a matrix converter as an alternating-current to alternating-current direct converter supplied with the alternating-current electric power to output arbitrary alternating-current electric power. By driving a motor with the alternating-current electric power supplied from the matrix converter, only one time electric power conversion is carried out to provide high efficiency in the whole system. In addition, electric power loss can be reduced so as to enhance a motor output when the system is applied to a vehicle power supply system. | 09-04-2008 |
20080206928 | SOLDERING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING SOLDERING METHOD - A soldering method of soldering first and second members includes shooting a laser light to at least one part of an outer peripheral portion surrounding a soldering-target region of the first member thereby to form an oxide film, and bonding the second member with the soldering-target region through a solder. According to the method, the solder resist is never exfoliated even after cleaning with chemicals for removing flux residues contained in solder. | 08-28-2008 |