FLASHSILICON INCORPORATION Patent applications |
Patent application number | Title | Published |
20140239999 | MULTIPLE-TIME CONFIGURABLE NON-VOLATILE LOOK-UP-TABLE - Innovative Non-Volatile Look-Up-Table (NV-LUT) has been constructed by Single Gate Logic Non-Volatile Memory (SGLNVM) devices processed with the standard CMOS logic process. One of a pair of complementary SGLNVM devices is always programmed to the high threshold voltage state and the other remains in the low threshold voltage state. By applying digital voltage rail (V | 08-28-2014 |
20140177348 | NON-VOLATILE REGISTER AND NON-VOLATILE SHIFT REGISTER - Non-Volatile Register (NVR) and Non-Volatile Shift Register (NVSR) devices are disclosed. The innovative NVR and NVSR devices of the invention can rapidly load the stored non-volatile data in non-volatile memory elements into their correspondent static memory elements for fast and constant referencing in digital circuitry. According to the invention, the loading process from non-volatile memory to static memory is a direct process without going through the conventional procedures of accessing the non-volatile memory, sensing from the non-volatile memory, and loading into the digital registers and shift registers. | 06-26-2014 |
20140140139 | INTERCONNECTION MATRIX USING SEMICONDUCTOR NON-VOLATILE MEMORY - An interconnection matrix consists of a plurality of semiconductor Non-Volatile Memory (NVM) forming an M×N array. Semiconductor NVM devices in the array are either programmed to a high threshold voltage state or erased to a low threshold voltage state according to a specific interconnection configuration. Applied with a gate voltage bias higher than the low threshold voltage and lower than the high threshold voltage to the control gates of the entire semiconductor NVM devices in the array, the configured interconnection network is formed. The disclosed interconnection matrix can be applied to configuring circuit routing in Integrated Circuit (IC). | 05-22-2014 |
20140097483 | 3-D SINGLE FLOATING GATE NON-VOLATILE MEMORY DEVICE - A 3-D Single Floating Gate Non-Volatile Memory (SFGNVM) device based on the 3-D fin Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The disclosed Non-Volatile Memory (NVM) device consists of a pair of semiconductor fins and one floating metal gate. The floating metal gate for storing electrical charges to alter the threshold voltage of the fin MOSFET crosses over the pair of semiconductor fins on top of coupling and tunneling dielectrics above the surfaces of the two semiconductor fins. One semiconductor fin with the same type impurity forms the control gate of the non-volatile memory device. The other semiconductor fin is doped with opposite type of impurity in the channel regions under the metal floating gate and with the same type of impurity in the source and drain regions on the sides of the crossed metal floating gate. | 04-10-2014 |
20130178026 | METHOD FOR FABRICATING A FIELD SIDE SUB-BITLINE NOR FLASH ARRAY - Field Side Sub-bitline NOR-type (FSNOR) flash array and the methods of fabrication are disclosed. The field side sub-bitlines of the invention formed with the same impurity type as the memory cells' source/drain electrodes along the two sides of field trench oxide link all the source electrodes together and all the drain electrodes together, respectively, for a string of semiconductor Non-Volatile Memory (NVM) cells in a NOR-type flash array of the invention. Each field side sub-bitline is connected to a main metal bitline through a contact at its twisted point in the middle. Because there are no contacts in between the linked NVM cells' electrodes in the NOR-type flash array of the invention, the wordline pitch and the bitline pitch can be applied to the minimum geometrical feature of a specific technology node. The NOR-type flash array of the invention provides at least as high as those in the conventional NAND flash array in cell area density. | 07-11-2013 |