Excelitas Technologies Corp. Patent applications |
Patent application number | Title | Published |
20140343478 | Visible Light Photo-Disinfection Patch - A method and device are presented for providing patient safe light to a wound. The device includes a radiation source producing flora lethal radiation wavelengths, a radiation conduit detachably optically coupled to the radiation source, and a patch remotely located from the radiation source configured to at least partially conform to a surface contour of the wound. The patch includes a flexible panel formed of a radiation transmitting material able to withstand sterilization, including at least one surface with a disturbed surface area configured to emit radiation upon the wound. | 11-20-2014 |
20130294103 | COLOR TEMPERATURE TUNABLE LED-BASED LAMP MODULE - A light mixing and folding lamp includes an LED assembly with two or more LED chips that direct light into the ingress end of a light mixing rod. The light mixing rod is positioned to pass through an aperture in a concave second reflecting element, and mixed light emerges from the egress end of the light mixing rod, where it is directed toward a first reflecting element positioned near a focal point of the second reflecting element. The first reflecting element reflects mixed light emerging from the egress end of the light mixing rod, folding the mixed light back toward a concave reflecting surface of the second reflecting element. The second reflecting element reflects light from the first reflecting element forward, where the light emerges from the lamp directed toward a subject to be illuminated. | 11-07-2013 |
20130009265 | PHOTON COUNTING UV-APD - An avalanche photodiode (APD) has a first semiconductor substrate having a first doping type. A first semiconductor layer is on top of the first semiconductor substrate. The first semiconductor layer is doped with the first doping type. A second epitaxial layer is on top of the first semiconductor layer. The second epitaxial layer is in-situ doped with the first doping type at a concentration higher than a concentration of the first doping type in the first semiconductor layer. A third epitaxial layer is on top of the second epitaxial layer. The third epitaxial layer is in-situ doped with a second doping type. The doping of the third epitaxial region forms a first p-n junction with the doping of the second epitaxial layer, wherein a carrier multiplication region includes the first p-n junction, and wherein the third epitaxial layer forms an absorption region for photons. A first implanted region is within the third epitaxial layer. The implanted region is doped with the second doping type. | 01-10-2013 |