EVIDENT TECHNOLOGIES, INC. Patent applications |
Patent application number | Title | Published |
20130280843 | Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material - Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture. | 10-24-2013 |
20130260135 | Introduction of stable inclusions into nanostructured thermoelectric materials - Disclosed is a method of consolidating a powder. The method can include obtaining a powder of semiconductor nanocrystals, obtaining a material which will form a gas when heated, and combining the powder and the material into a combined powder. The method can also include consolidating the powder by applying heat and pressure to the combined powder. | 10-03-2013 |
20130252406 | Techniques for drying and annealing thermoelectric powders - Embodiments of the invention include a method of producing a low contaminant, stoichiometrically controlled semiconductor material, the method comprising providing a colloidal suspension of a plurality of colloidally grown semiconductor nanocrystals, providing an inorganic ligand structure around a surface of the semiconductor nanocrystals of the plurality of semiconductor nanocrystals, drying the colloidal suspension into a powder, and pre-annealing the powder into a semiconductor material. | 09-26-2013 |
20080277626 | QUANTUM DOT FLUORESCENT INKS - The present invention relates to inks and more particularly, to fluorescent ink formulations including quantum dots for various printing processes such as inkjet, flexographic, screen printing, thermal transfer, and pens. The inks include one or more populations of fluorescent quantum dots dispersed in polymeric material, having fluorescence emissions between about 450 nm and about 2500 nm; and a liquid or solid vehicle. The vehicle is present in a ratio to achieve an ink viscosity, surface tension effective, drying time and other printing parameters used for printing processes. | 11-13-2008 |
20080246388 | INFRARED DISPLAY WITH LUMINESCENT QUANTUM DOTS - A display device that includes an underlying excitation source, a converting layer, and an optical filter layer. The underlying excitation source emits light in a spatial pattern that may or may not be altered in time and has a short wavelength capable of being at least partially absorbed by the overlying converting layer. The converting layer can be a contiguous film or pixels of quantum dots that can be dispersed in a matrix material. This converting layer is capable of absorbing at least a portion of the wavelength(s) of the light from the underlying excitation source and emitting light at one or more different wavelengths. The optical filter layer prevents the residual light from the excitation source that was not absorbed by the converting layer from being emitted by the display device. | 10-09-2008 |
20080230750 | POWDERED QUANTUM DOTS - Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer. | 09-25-2008 |
20080202383 | GROUP II ALLOYED I-III-VI SEMICONDUCTOR NANOCRYSTAL COMPOSITIONS AND METHODS OF MAKING SAME - A semiconductor nanocrystal composition that is stable and has high luminescent quantum yield. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor nanocrystal material. A method of making a semiconductor nanocrystal composition is also provides which includes synthesizing a semiconductor nanocrystal core of a group II alloyed I-III-VI semiconductor material. | 08-28-2008 |