|ENTEGRIS, INC. Patent applications|
|Patent application number||Title||Published|
|20150251920||FLUORINE FREE TUNGSTEN ALD/CVD PROCESS - A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.||09-10-2015|
|20150246941||COBALT PRECURSORS FOR LOW TEMPERATURE ALD OR CVD OF COBALT-BASED THIN FILMS - Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.||09-03-2015|
Patent applications by ENTEGRIS, INC.