DURHAM SCIENTIFIC CRYSTALS LIMITED Patent applications |
Patent application number | Title | Published |
20120045868 | SEMICONDUCTOR DEVICE CONTACTS - A method of fabrication of electrical contact structures on a semiconductor material is described comprising the steps of: depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material; and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described. | 02-23-2012 |
20110116605 | Method and Apparatus for Inspection of Materials - A method of and apparatus for obtaining radiation transmission data and especially an image of an object in such manner that allows some data about relative proportions of constituent materials to be derived is described. A radiation source and a radiation detector system able to resolve transmitted intensity across a plurality of frequencies within the spectrum of the source are used to produce transmitted intensity data for each such frequency. Measured data is compared numerically to a mass attenuation data library storing mass attenuation data, individually or collectively, for a small number of expected constituent component materials to fit each intensity data item to the relationship given by the exponential attenuation law: I/I | 05-19-2011 |
20110073034 | APPARATUS AND PROCESS FOR CRYSTAL GROWTH - The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers. | 03-31-2011 |
20110024877 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer. | 02-03-2011 |
20100327277 | SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE - Device and method of forming a device in which a substrate ( | 12-30-2010 |
20090053453 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer. | 02-26-2009 |
20080315342 | Semiconductor Device with a Bulk Single Crystal on a Substrate - Device and method of forming a device in which a substrate ( | 12-25-2008 |