Consorzio Delta Ti Research
Consorzio Delta Ti Research Patent applications | ||
Patent application number | Title | Published |
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20150083178 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE HAVING PHONON CONFINEMENT LAYERS OF CRYSTALLINE SEMICONDUCTOR CONTAINING ANGSTROM-SIZED ORGANIC GROUPS AS SEMICONDUCTOR ATOMS SUBSTITUENTS WITHIN THE CRYSTAL LATTICE AND FABRICATION PROCESS - Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk. Fabrication processes and Seebeck-Peltier energy conversion devices are exemplarily described. | 03-26-2015 |
20130037070 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION ELEMENT WITH PARALLEL NANOWIRES OF CONDUCTOR OR SEMICONDUCTOR MATERIAL ORGANIZED IN ROWS AND COLUMNS THROUGH AN INSULATING BODY AND PROCESS - A novel and effective structure of a stackable element (A | 02-14-2013 |
20120279542 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE EMPLOYING A STACK OF ALTERNATED NANOMETRIC LAYERS OF CONDUCTIVE AND DIELECTRIC MATERIAL AND FABRICATION PROCESS - A multilayered stack useful for constituting a Seebeck-Peltier effect electrically conductive septum with opposite hot-side and cold-side metallizations for connection to an electrical circuit, comprises a stacked succession of layers (Ci) of electrically conductive material alternated to dielectric oxide layers (Di) in form of a continuous film or of densely dispersed nano and sub-nano particles or clusters of particles of oxide; at least the electrically conductive layers having mean thickness ranging from 5 to 100 nm and surface irregularities at the interfaces with the dielectric oxide layers of mean peak-to-valley amplitude and mean periodicity comprised between 5 to 20 nm. | 11-08-2012 |