Commiss. A L'Energie Atom. ET Aux Energ. Alterna. Patent applications |
Patent application number | Title | Published |
20110284870 | METHOD FOR MAKING A SEMICONDUCTOR STRUCTURE WITH A BURIED GROUND PLANE - A method for making a semiconducting structure, including: a) forming, on a surface of a final semiconductor substrate, a semiconducting layer, doped with elements from columns III and V of the Periodic Table so as to form a ground plane, b) forming a dielectric layer, c) then assembling, by direct adhesion of the source substrate, on the final substrate, the layer forming the ground plane between the final substrate and the source substrate, the dielectric layer being between the source substrate and the ground plane, d) then thinning the source substrate, leaving, on the surface of the semiconductor structure, a film made from a semiconducting material. | 11-24-2011 |
20110266594 | METHOD FOR OBTAINING A LAYER OF ALN HAVING SUBSTANTIALLY VERTICAL SIDES - A method is disclosed, for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, comprising:
| 11-03-2011 |
20110248602 | ACOUSTIC RESONATOR COMPRISING AN ELECTRET AND METHOD OF PRODUCING SAID RESONATOR, APPLICATION TO SWITCHABLE COUPLED RESONATOR FILTERS - Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters. | 10-13-2011 |
20110221015 | METHOD FOR PRODUCING AN ELECTRO-MECHANICAL MICROSYSTEM - A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer. | 09-15-2011 |
20110147849 | INTEGRATED CIRCUIT WITH ELECTROSTATICALLY COUPLED MOS TRANSISTORS AND METHOD FOR PRODUCING SUCH AN INTEGRATED CIRCUIT - An integrated circuit including:
| 06-23-2011 |
20110104829 | METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE - A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate. | 05-05-2011 |
20110086461 | METHOD FOR MAKING AN OPTICAL DEVICE WITH INTEGRATED OPTOELECTRONIC COMPONENTS - A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical element being positioned in the blind hole, b) attaching the support to a substrate including the integrated optoelectronic components, the blind hole forming a cavity in which the optical element faces one of the optoelectronic components, c) achieving thinning of the substrate and making electric connections through the substrate, and d) making an aperture through the bottom wall of the blind hole, uncovering at least one portion of the optical field of the optical element. | 04-14-2011 |
20110079889 | CAVITY STRUCTURE COMPRISING AN ADHESION INTERFACE COMPOSED OF GETTER MATERIAL - A structure comprising a cavity delimited by a first substrate and a second substrate attached to the first substrate by an adhesion interface, in which a first part of a first portion of a getter material forms part of the adhesion interface, and a second part of the first portion of getter material is placed in the cavity, the first portion of getter material being placed against the first substrate or the second substrate, the adhesion interface further comprising part of a second portion of a getter material thermocompressed to the first part of the first portion of getter material, said second portion of getter material being placed against the second substrate when the first portion of getter material is placed against the first substrate or placed against the first substrate when the first portion of getter material is placed against the second substrate. | 04-07-2011 |
20110035168 | MULTICARRIER REFLECTOMETRY DEVICE AND METHOD FOR ON-LINE DIAGNOSIS OF AT LEAST ONE TRANSMISSION LINE - A multi-carrier reflectometry device and method for on-line diagnosis of at least one transmission line. The device includes: a transmission part that includes successively: a module for parameterizing a test signal S | 02-10-2011 |
20110033976 | SELF-ASSEMBLY OF CHIPS ON A SUBSTRATE - A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced. | 02-10-2011 |
20110018132 | OBJECT INCLUDING A GRAPHIC ELEMENT TRANSFERRED ON A SUPPORT AND METHOD FOR MAKING SUCH AN OBJECT - An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor. | 01-27-2011 |
20110003443 | METHOD FOR PRODUCING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN - A method for producing a transistor with metallic source and drain including the steps of:
| 01-06-2011 |
20100312939 | INTERCONNECTION NETWORK WITH DYNAMIC SUB-NETWORKS - An interconnection network with m first electronic circuits and n second electronic circuits, comprising m interconnection sub-networks, each comprising: | 12-09-2010 |
20100266931 | SEALED FLEXIBLE LINK BETWEEN A METAL SUBSTRATE AND A CERAMIC SUBSTRATE, METHOD FOR MAKING SUCH A LINK, APPLICATION OF THE METHOD TO SEALING HIGH TEMPERATURE ELECTROLYZERS AND FUEL CELLS - A device including a metal substrate and a ceramic substrate including a back-tapered groove separated from each other by a sealed flexible link. The link includes: a metal element including an end connected to the metal substrate and at another end housed in the groove of the ceramic substrate, the metal element being elastically deformable both in the groove along a direction radial to the groove and, in the separation space between the metal substrate and the ceramic substrate along the separation direction, and a joint-forming mass with a greater thermal expansion coefficient than that of the ceramic substrate and adhesively bonded to the end of the metal element housed in the back-tapered groove, the joint fitting with direct contact a portion of the height of convergent sidewalls of the groove. | 10-21-2010 |
20100244970 | ATOMIC CLOCK REGULATED BY A STATIC FIELD AND TWO OSCILLATING FIELDS - An atomic clock including a mechanism applying both a static magnetic field and two oscillating magnetic fields, all mutually perpendicular, in a magnetic shield. The amplitudes and frequencies of the oscillating magnetic fields may be chosen so as to annihilate energy variations between sub-transition levels of excited atoms and to reinforce a clock output signal, and with low sensitivity to defects in regulation. | 09-30-2010 |