20130244404 | METHOD OF SINGULATING A THIN SEMICONDUCTOR WAFER - A method of singulating a semiconductor wafer having two surfaces separated by a thickness T<200 μm includes partitioning it along a network of scribelines on one side. The other side is secured to an elastic foil, which is clamped to a wafer table. A radiative scribing tool is used to produce at least one laser beam having a pulse duration P≦75 ps, and causing the laser beam to scan along each of the scribelines so as to create a scribe with a depth D09-19-2013 | |